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5961-00-361-9116
20 Products
SM-C-969818-1
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003619116
NSN
5961-00-361-9116
SM-C-969818-1
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003619116
NSN
5961-00-361-9116
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
RETAINER,SEMICONDUCTOR DEVICE
Related Searches:
40064035936
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003619116
NSN
5961-00-361-9116
40064035936
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003619116
NSN
5961-00-361-9116
MFG
COOPER CROUSE-HINDS GMBH STANDORT EB ERBACH
Description
RETAINER,SEMICONDUCTOR DEVICE
Related Searches:
4025098-1
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003619116
NSN
5961-00-361-9116
4025098-1
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003619116
NSN
5961-00-361-9116
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
RETAINER,SEMICONDUCTOR DEVICE
Related Searches:
5082-4409
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003619116
NSN
5961-00-361-9116
5082-4409
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003619116
NSN
5961-00-361-9116
MFG
HEWLETT PACKARD CO
Description
RETAINER,SEMICONDUCTOR DEVICE
Related Searches:
5082-4418
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003619116
NSN
5961-00-361-9116
5082-4418
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003619116
NSN
5961-00-361-9116
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
RETAINER,SEMICONDUCTOR DEVICE
Related Searches:
5082-4707
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003619116
NSN
5961-00-361-9116
5082-4707
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003619116
NSN
5961-00-361-9116
MFG
AGILENT TECHNOLOGIES INC DBA AGILENT SANTA CLARA SITE DIV SANTA CLARA SITE
Description
RETAINER,SEMICONDUCTOR DEVICE
Related Searches:
76-06056-001
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003619116
NSN
5961-00-361-9116
76-06056-001
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003619116
NSN
5961-00-361-9116
MFG
RAYTHEON E-SYSTEMS INC
Description
RETAINER,SEMICONDUCTOR DEVICE
Related Searches:
85A0006
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003619116
NSN
5961-00-361-9116
85A0006
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003619116
NSN
5961-00-361-9116
MFG
SIEMENS ENERGY & AUTOMATION INC. DBA SIEMENS AIRFIELD SOLUTIONS DIV SIEMENS ENERGY & AUTOMATION DBA SIEMENS AIRFIELD SOLUTIONS
Description
RETAINER,SEMICONDUCTOR DEVICE
Related Searches:
G376611-2
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003619116
NSN
5961-00-361-9116
G376611-2
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003619116
NSN
5961-00-361-9116
MFG
LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP
Description
RETAINER,SEMICONDUCTOR DEVICE
Related Searches:
GC842BM1
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003619116
NSN
5961-00-361-9116
GC842BM1
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003619116
NSN
5961-00-361-9116
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN AEROSPACE SYSTEMS
Description
RETAINER,SEMICONDUCTOR DEVICE
Related Searches:
SC570004-1
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003619116
NSN
5961-00-361-9116
SC570004-1
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003619116
NSN
5961-00-361-9116
MFG
SELEX COMMUNICATIONS LTD
Description
RETAINER,SEMICONDUCTOR DEVICE
Related Searches:
1712860-1
TRANSISTOR
NSN, MFG P/N
5961003619122
NSN
5961-00-361-9122
MFG
HONEYWELL INTL DBA HONEYWELL DIV BUSINESS AND GENERAL AVIATION
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 2.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
40245
TRANSISTOR
NSN, MFG P/N
5961003619122
NSN
5961-00-361-9122
MFG
RCA CORP DISTRIBUTION AND SPECIAL PRODUCTS
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 2.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
40894
TRANSISTOR
NSN, MFG P/N
5961003619122
NSN
5961-00-361-9122
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 2.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
576-0003-029
TRANSISTOR
NSN, MFG P/N
5961003619122
NSN
5961-00-361-9122
MFG
JOHNSON E F CO COMCO/COMMUNICATIONS CO DIV
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 2.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
VA5139
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003619137
NSN
5961-00-361-9137
MFG
CRYSTALONICS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
701-1202
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003619140
NSN
5961-00-361-9140
MFG
THERMO ORION INC
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 1.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE SILVER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 600.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
S1-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003619140
NSN
5961-00-361-9140
MFG
TROMPETER ELECTRONICS INC .
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 1.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE SILVER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 600.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
SI6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003619140
NSN
5961-00-361-9140
MFG
SEMICON COMPONENTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 1.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE SILVER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 600.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
JAN1N4126
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003619482
NSN
5961-00-361-9482
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 450.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4126
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-435
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 51.0 MAXIMUM NOMINAL REGULATOR VOLTAGE