My Quote Request
5961-00-451-3214
20 Products
FD1154
TRANSISTOR
NSN, MFG P/N
5961004513214
NSN
5961-00-451-3214
MFG
SOLITRON DEVICES INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
013-678
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004511376
NSN
5961-00-451-1376
MFG
AMPEX DATA SYSTEMS CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
JAN1N3886
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004512206
NSN
5961-00-451-2206
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3886
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-304
OVERALL LENGTH: 0.550 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.500 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
Related Searches:
JAN1N3886A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004512206
NSN
5961-00-451-2206
JAN1N3886A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004512206
NSN
5961-00-451-2206
MFG
ADELCO ELEKTRONIK GMBH
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3886
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-304
OVERALL LENGTH: 0.550 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.500 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
Related Searches:
0N047316
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004512491
NSN
5961-00-451-2491
MFG
NATIONAL SECURITY AGENCY
Description
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
4EX595
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004512491
NSN
5961-00-451-2491
MFG
4 LD INC
Description
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1902-1169
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004513158
NSN
5961-00-451-3158
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 0.25 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
1854-0431
TRANSISTOR
NSN, MFG P/N
5961004513160
NSN
5961-00-451-3160
MFG
AGILENT TECHNOLOGIES INC. DIV AGILENT TECHNOLOGIES HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 2.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2N5179
TRANSISTOR
NSN, MFG P/N
5961004513160
NSN
5961-00-451-3160
MFG
RCA CORP DISTRIBUTION AND SPECIAL PRODUCTS
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 2.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
556166-035
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004513186
NSN
5961-00-451-3186
556166-035
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004513186
NSN
5961-00-451-3186
MFG
EATON CORP ELECTRONIC INSTRUMENTATION DIV LOS ANGELES PLANT
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
M5-1AZ5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004513186
NSN
5961-00-451-3186
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1902-0185
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004513193
NSN
5961-00-451-3193
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 3.60 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.4 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
CD35832
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004513193
NSN
5961-00-451-3193
MFG
TELCOM SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 3.60 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.4 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
DZ740122E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004513193
NSN
5961-00-451-3193
MFG
SIEMENS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 3.60 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.4 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
FZ7302
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004513193
NSN
5961-00-451-3193
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 3.60 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.4 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
SZ10939-308
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004513193
NSN
5961-00-451-3193
SZ10939-308
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004513193
NSN
5961-00-451-3193
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 3.60 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.4 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
152-0321-00
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004513211
NSN
5961-00-451-3211
152-0321-00
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004513211
NSN
5961-00-451-3211
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
BAV45A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004513211
NSN
5961-00-451-3211
BAV45A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004513211
NSN
5961-00-451-3211
MFG
PHILIPS CIRCUIT ASSEMBLIES
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
FSA1480
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004513211
NSN
5961-00-451-3211
FSA1480
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004513211
NSN
5961-00-451-3211
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
151-1009-00
TRANSISTOR
NSN, MFG P/N
5961004513214
NSN
5961-00-451-3214
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON