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5961-00-472-0367

20 Products

TD910

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004720367

NSN

5961-00-472-0367

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TD910

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004720367

NSN

5961-00-472-0367

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

38665

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004720367

NSN

5961-00-472-0367

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38665

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004720367

NSN

5961-00-472-0367

MFG

INTERSIL CORPORATION

STD910

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004720367

NSN

5961-00-472-0367

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STD910

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004720367

NSN

5961-00-472-0367

MFG

GPD OPTOELECTRONICS CORP.

353-6474-010

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961004720376

NSN

5961-00-472-0376

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353-6474-010

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961004720376

NSN

5961-00-472-0376

MFG

ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS

Description

DESIGN CONTROL REFERENCE: CB1014
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 12969
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

CB1014

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961004720376

NSN

5961-00-472-0376

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CB1014

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961004720376

NSN

5961-00-472-0376

MFG

MICRO USPD INC

Description

DESIGN CONTROL REFERENCE: CB1014
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 12969
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

1537172-4

TRANSISTOR

NSN, MFG P/N

5961004720384

NSN

5961-00-472-0384

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1537172-4

TRANSISTOR

NSN, MFG P/N

5961004720384

NSN

5961-00-472-0384

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-TUCSON

Description

CRITICALITY CODE JUSTIFICATION: FEAT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: MISSILE, MINUTEMAN LGM-30, HELICOPTER, CARRIER BASED ASW, SH-60F, CONSOLIDATED TARGETS, F4S AIRCRAFT, AIRCRAFT, TOMCAT F-14, HELICOPTER, COBRA/TOW, AH SERIES, AIRCRAFT, PHANTOM F-4, HELICOPTER, SEARCH AND RESCUE, HH-60H, HELICOPTER, ELECTRONIC
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 64547
MFR SOURCE CONTROLLING REFERENCE: 1537172-4
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL LENGTH: 0.844 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.875 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 1 PIN AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
~1: COUNTERMEASURES, EH-60A

507C850H14

TRANSISTOR

NSN, MFG P/N

5961004720384

NSN

5961-00-472-0384

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507C850H14

TRANSISTOR

NSN, MFG P/N

5961004720384

NSN

5961-00-472-0384

MFG

WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV

Description

CRITICALITY CODE JUSTIFICATION: FEAT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: MISSILE, MINUTEMAN LGM-30, HELICOPTER, CARRIER BASED ASW, SH-60F, CONSOLIDATED TARGETS, F4S AIRCRAFT, AIRCRAFT, TOMCAT F-14, HELICOPTER, COBRA/TOW, AH SERIES, AIRCRAFT, PHANTOM F-4, HELICOPTER, SEARCH AND RESCUE, HH-60H, HELICOPTER, ELECTRONIC
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 64547
MFR SOURCE CONTROLLING REFERENCE: 1537172-4
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL LENGTH: 0.844 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.875 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 1 PIN AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
~1: COUNTERMEASURES, EH-60A

AT-1154

TRANSISTOR

NSN, MFG P/N

5961004720384

NSN

5961-00-472-0384

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AT-1154

TRANSISTOR

NSN, MFG P/N

5961004720384

NSN

5961-00-472-0384

MFG

POWER TECH INC

Description

CRITICALITY CODE JUSTIFICATION: FEAT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: MISSILE, MINUTEMAN LGM-30, HELICOPTER, CARRIER BASED ASW, SH-60F, CONSOLIDATED TARGETS, F4S AIRCRAFT, AIRCRAFT, TOMCAT F-14, HELICOPTER, COBRA/TOW, AH SERIES, AIRCRAFT, PHANTOM F-4, HELICOPTER, SEARCH AND RESCUE, HH-60H, HELICOPTER, ELECTRONIC
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 64547
MFR SOURCE CONTROLLING REFERENCE: 1537172-4
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL LENGTH: 0.844 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.875 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 1 PIN AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
~1: COUNTERMEASURES, EH-60A

KX9038

TRANSISTOR

NSN, MFG P/N

5961004720384

NSN

5961-00-472-0384

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KX9038

TRANSISTOR

NSN, MFG P/N

5961004720384

NSN

5961-00-472-0384

MFG

MICROSEMI PPC INC

Description

CRITICALITY CODE JUSTIFICATION: FEAT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: MISSILE, MINUTEMAN LGM-30, HELICOPTER, CARRIER BASED ASW, SH-60F, CONSOLIDATED TARGETS, F4S AIRCRAFT, AIRCRAFT, TOMCAT F-14, HELICOPTER, COBRA/TOW, AH SERIES, AIRCRAFT, PHANTOM F-4, HELICOPTER, SEARCH AND RESCUE, HH-60H, HELICOPTER, ELECTRONIC
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 64547
MFR SOURCE CONTROLLING REFERENCE: 1537172-4
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL LENGTH: 0.844 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.875 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 1 PIN AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
~1: COUNTERMEASURES, EH-60A

3116

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004720395

NSN

5961-00-472-0395

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3116

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004720395

NSN

5961-00-472-0395

MFG

DOERS ASSOCIATES LLC

Description

DESIGN CONTROL REFERENCE: 3A50
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 17545
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.300 INCHES NOMINAL
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

3A50

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004720395

NSN

5961-00-472-0395

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3A50

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961004720395

NSN

5961-00-472-0395

MFG

ATLANTIC SEMICONDUCTORS INC

Description

DESIGN CONTROL REFERENCE: 3A50
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 17545
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.300 INCHES NOMINAL
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

535439-3

TRANSISTOR

NSN, MFG P/N

5961004720400

NSN

5961-00-472-0400

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535439-3

TRANSISTOR

NSN, MFG P/N

5961004720400

NSN

5961-00-472-0400

MFG

RAYTHEON COMPANY

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

60547

TRANSISTOR

NSN, MFG P/N

5961004720400

NSN

5961-00-472-0400

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60547

TRANSISTOR

NSN, MFG P/N

5961004720400

NSN

5961-00-472-0400

MFG

HARRIS CORP SEMICONDUCTOR SECTOR

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

40SP130

TRANSISTOR

NSN, MFG P/N

5961004720401

NSN

5961-00-472-0401

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40SP130

TRANSISTOR

NSN, MFG P/N

5961004720401

NSN

5961-00-472-0401

MFG

SOLITRON DEVICES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 0.50 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.352 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 225.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 200.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS

535522-1

TRANSISTOR

NSN, MFG P/N

5961004720401

NSN

5961-00-472-0401

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535522-1

TRANSISTOR

NSN, MFG P/N

5961004720401

NSN

5961-00-472-0401

MFG

RAYTHEON COMPANY

Description

CURRENT RATING PER CHARACTERISTIC: 0.50 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.352 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 225.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 200.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS

2N5438

TRANSISTOR

NSN, MFG P/N

5961004720429

NSN

5961-00-472-0429

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2N5438

TRANSISTOR

NSN, MFG P/N

5961004720429

NSN

5961-00-472-0429

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM BASE CURRENT, DC AND 60.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 120.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5782 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 2.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

2N5438A

TRANSISTOR

NSN, MFG P/N

5961004720429

NSN

5961-00-472-0429

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2N5438A

TRANSISTOR

NSN, MFG P/N

5961004720429

NSN

5961-00-472-0429

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM BASE CURRENT, DC AND 60.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 120.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5782 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 2.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

A3034830

TRANSISTOR

NSN, MFG P/N

5961004720429

NSN

5961-00-472-0429

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A3034830

TRANSISTOR

NSN, MFG P/N

5961004720429

NSN

5961-00-472-0429

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM BASE CURRENT, DC AND 60.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 120.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5782 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 2.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

16G

TRANSISTOR

NSN, MFG P/N

5961004720723

NSN

5961-00-472-0723

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16G

TRANSISTOR

NSN, MFG P/N

5961004720723

NSN

5961-00-472-0723

MFG

LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 0.10 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.193 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.600 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 27.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

16GTRANSIST0R

TRANSISTOR

NSN, MFG P/N

5961004720723

NSN

5961-00-472-0723

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16GTRANSIST0R

TRANSISTOR

NSN, MFG P/N

5961004720723

NSN

5961-00-472-0723

MFG

AMERICAN TELEPHONE AND TELEGRAPH CO

Description

CURRENT RATING PER CHARACTERISTIC: 0.10 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.193 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.600 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 27.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC