My Quote Request
5961-00-567-2377
20 Products
666068-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005672377
NSN
5961-00-567-2377
666068-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005672377
NSN
5961-00-567-2377
MFG
BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: IN67A TYPE
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1112 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1N67A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005672377
NSN
5961-00-567-2377
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: IN67A TYPE
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1112 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
219283
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005672377
NSN
5961-00-567-2377
MFG
RCA CORP DISTRIBUTOR AND SPECIAL PRODUCTS DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: IN67A TYPE
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1112 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
353-2015-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005672377
NSN
5961-00-567-2377
353-2015-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005672377
NSN
5961-00-567-2377
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: IN67A TYPE
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE1112 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1N316
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005675813
NSN
5961-00-567-5813
MFG
ELECTRONIC TRANSISTORS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 0.25 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-2
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.400 INCHES MAXIMUM
OVERALL LENGTH: 0.900 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
202-16-59
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005675813
NSN
5961-00-567-5813
MFG
RECON/OPTICAL INC .
Description
CURRENT RATING PER CHARACTERISTIC: 0.25 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-2
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.400 INCHES MAXIMUM
OVERALL LENGTH: 0.900 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
42-004054-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005679526
NSN
5961-00-567-9526
42-004054-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005679526
NSN
5961-00-567-9526
MFG
INTERLINK COMMUNICATIONS INC
Description
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: CONTACTS PLATED GOLD
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 0.078 INCHES MINIMUM AND 0.084 INCHES MAXIMUM
OVERALL LENGTH: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM PULSE RF POWER AND 100.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, MAXIMUM PEAK, TOTAL VALUE AND 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 FERRULE
TEST DATA DOCUMENT: 30890-42-004054 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
5082-2751
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005679526
NSN
5961-00-567-9526
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: CONTACTS PLATED GOLD
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 0.078 INCHES MINIMUM AND 0.084 INCHES MAXIMUM
OVERALL LENGTH: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM PULSE RF POWER AND 100.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, MAXIMUM PEAK, TOTAL VALUE AND 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 FERRULE
TEST DATA DOCUMENT: 30890-42-004054 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
DDB4517-96
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005679526
NSN
5961-00-567-9526
DDB4517-96
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005679526
NSN
5961-00-567-9526
MFG
SKYWORKS SOLUTIONS INC.
Description
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: CONTACTS PLATED GOLD
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 0.078 INCHES MINIMUM AND 0.084 INCHES MAXIMUM
OVERALL LENGTH: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM PULSE RF POWER AND 100.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, MAXIMUM PEAK, TOTAL VALUE AND 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 FERRULE
TEST DATA DOCUMENT: 30890-42-004054 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
HP5082-6827
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005679526
NSN
5961-00-567-9526
HP5082-6827
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005679526
NSN
5961-00-567-9526
MFG
HEWLETT PACKARD CO
Description
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: CONTACTS PLATED GOLD
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 0.078 INCHES MINIMUM AND 0.084 INCHES MAXIMUM
OVERALL LENGTH: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM PULSE RF POWER AND 100.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, MAXIMUM PEAK, TOTAL VALUE AND 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 FERRULE
TEST DATA DOCUMENT: 30890-42-004054 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
239A8503PC1
TRANSISTOR
NSN, MFG P/N
5961005682218
NSN
5961-00-568-2218
MFG
BECHTEL TECHNICAL SERVICES INC MACHINERY APPARATUS OPN
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH RQMT OF DESC PRODUCTION STD NO. L01658; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
JAN2N706
TRANSISTOR
NSN, MFG P/N
5961005682218
NSN
5961-00-568-2218
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH RQMT OF DESC PRODUCTION STD NO. L01658; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
L01658
TRANSISTOR
NSN, MFG P/N
5961005682218
NSN
5961-00-568-2218
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH RQMT OF DESC PRODUCTION STD NO. L01658; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
APD203
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005682807
NSN
5961-00-568-2807
MFG
AMERICAN POWER DEVICES INC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
2N5303
TRANSISTOR,SILICON
NSN, MFG P/N
5961005685552
NSN
5961-00-568-5552
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
TRANSISTOR,SILICON
Related Searches:
0191A0003
TRANSISTOR
NSN, MFG P/N
5961005685558
NSN
5961-00-568-5558
MFG
MARTIN MARIETTA TECHNOLOGIES INC SUB OF MARTIN MARIETTA CORP AERO AND NAVAL SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.266 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 10.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
2N4900
TRANSISTOR
NSN, MFG P/N
5961005685558
NSN
5961-00-568-5558
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.266 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 10.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
RLC201CLIP
CLIP MOUNT,SEMICOND
NSN, MFG P/N
5961005687936
NSN
5961-00-568-7936
MFG
SIEMENS MICROELECTRONICS INC OPTOELECTRONICS DIV
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: SNAP IN MOUNTING CLIP,0.315 IN. DIA.,0.265IN. H,FITS A 0.265 IN. DIA. HOLE,FITS UP TO0.125 IN. PANEL THK.,WITH PLASTIC LOCKING COLLAR,FOR MOUNTING LITRONIX LIGHT EMITTING DIODE RLC 201
Related Searches:
007-06040-0000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005688768
NSN
5961-00-568-8768
007-06040-0000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005688768
NSN
5961-00-568-8768
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-OLATHE
Description
DESIGN CONTROL REFERENCE: 007-06040-0000
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 22373
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.062 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
007-6040-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005688768
NSN
5961-00-568-8768
007-6040-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005688768
NSN
5961-00-568-8768
MFG
DRS ICAS, LLC
Description
DESIGN CONTROL REFERENCE: 007-06040-0000
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 22373
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.062 INCHES MAXIMUM
OVERALL LENGTH: 0.125 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA: