My Quote Request
5961-01-359-7212
20 Products
1N6130
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013597212
NSN
5961-01-359-7212
MFG
SEMTECH CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
NH7555290P601
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013593337
NSN
5961-01-359-3337
NH7555290P601
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013593337
NSN
5961-01-359-3337
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 11.0 MILLIMETERS MINIMUM AND 13.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 11.0 MILLIMETERS MINIMUM AND 13.0 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
ES4634-07
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013593338
NSN
5961-01-359-3338
MFG
DRS SUSTAINMENT SYSTEMS INC. DIV DRS SUSTAINMENT SYSTEMS INC. USE CAGE CODE 98255 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6518
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/575
OVERALL DIAMETER: 0.185 INCHES NOMINAL
OVERALL LENGTH: 0.340 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7500.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
JANTX1N6518
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013593338
NSN
5961-01-359-3338
JANTX1N6518
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013593338
NSN
5961-01-359-3338
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6518
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/575
OVERALL DIAMETER: 0.185 INCHES NOMINAL
OVERALL LENGTH: 0.340 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7500.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
RZ279
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013593338
NSN
5961-01-359-3338
MFG
VOLTAGE MULTIPLIERS INC. DBA V M I
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6518
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/575
OVERALL DIAMETER: 0.185 INCHES NOMINAL
OVERALL LENGTH: 0.340 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7500.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
8842-00
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013594187
NSN
5961-01-359-4187
8842-00
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013594187
NSN
5961-01-359-4187
MFG
LAB-VOLT SYSTEMS INC.
Description
COMPONENT NAME AND QUANTITY: 6 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE SINGLE SEMICONDUCTOR DEVICE DIODE
OVERALL HEIGHT: 6.100 INCHES NOMINAL
OVERALL LENGTH: 17.300 INCHES NOMINAL
OVERALL WIDTH: 11.300 INCHES NOMINAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM PEAK-POINT VOLTAGE SINGLE SEMICONDUCTOR DEVICE DIODE
Related Searches:
741C3040-16-020
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013594232
NSN
5961-01-359-4232
741C3040-16-020
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013594232
NSN
5961-01-359-4232
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV INFORMATION SYSTEMS - GERMANTOWN
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 150.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.820 INCHES MAXIMUM
OVERALL LENGTH: 2.220 INCHES MINIMUM AND 2.280 INCHES MAXIMUM
OVERALL WIDTH: 0.730 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
JXM19500/483-01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013594232
NSN
5961-01-359-4232
JXM19500/483-01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013594232
NSN
5961-01-359-4232
MFG
MICRO USPD INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 150.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.820 INCHES MAXIMUM
OVERALL LENGTH: 2.220 INCHES MINIMUM AND 2.280 INCHES MAXIMUM
OVERALL WIDTH: 0.730 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
PM-32
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013594237
NSN
5961-01-359-4237
MFG
PYROTRONICS DIV OF BAKER INDUSTRIES INC SUB OF BORG-WARNER CORP
Description
III END ITEM IDENTIFICATION: 4920-00-005-8502
MAJOR COMPONENTS: DIODE 36; PANEL 1
Related Searches:
10360-3N
COVER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013594253
NSN
5961-01-359-4253
MFG
ROSS MILTON CO THE
Description
MATERIAL: POLYAMIDE NYLON
OVERALL HEIGHT: 0.305 INCHES NOMINAL
OVERALL LENGTH: 1.627 INCHES NOMINAL
OVERALL WIDTH: 1.130 INCHES NOMINAL
Related Searches:
346240-3
COVER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013594253
NSN
5961-01-359-4253
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MATERIAL: POLYAMIDE NYLON
OVERALL HEIGHT: 0.305 INCHES NOMINAL
OVERALL LENGTH: 1.627 INCHES NOMINAL
OVERALL WIDTH: 1.130 INCHES NOMINAL
Related Searches:
52290001-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013594369
NSN
5961-01-359-4369
52290001-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013594369
NSN
5961-01-359-4369
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRMMAN NORDEN SYSTEMS DIV NAVAL AND MARINE SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
TX-KV2101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013594369
NSN
5961-01-359-4369
MFG
MYR ARTHUR B SHEET METAL INDUSTRIES INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1098AS1363
TRANSISTOR
NSN, MFG P/N
5961013595471
NSN
5961-01-359-5471
MFG
NAVAL AIR SYSTEMS COMMAND
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: -4.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES NOMINAL
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 NOMINAL GATE TO SOURCE VOLTAGE
Related Searches:
IRFF9121
TRANSISTOR
NSN, MFG P/N
5961013595471
NSN
5961-01-359-5471
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: -4.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES NOMINAL
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 NOMINAL GATE TO SOURCE VOLTAGE
Related Searches:
P17-100-040B1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013595472
NSN
5961-01-359-5472
P17-100-040B1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013595472
NSN
5961-01-359-5472
MFG
LA MARCHE MFG. CO. DBA LA MARCHE
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
77A105138P001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013596165
NSN
5961-01-359-6165
77A105138P001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013596165
NSN
5961-01-359-6165
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N659B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013596499
NSN
5961-01-359-6499
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SPECIFICATION/STANDARD DATA: 80131-1N659B PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
Related Searches:
1N3337A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013596500
NSN
5961-01-359-6500
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
INCLOSURE MATERIAL: METAL
SPECIFICATION/STANDARD DATA: 80131-1N3337A PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
Related Searches:
1N3198A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013596501
NSN
5961-01-359-6501
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SPECIFICATION/STANDARD DATA: 80131-1N3198A PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD