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5961-00-889-4112

20 Products

99002048

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961008894112

NSN

5961-00-889-4112

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99002048

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961008894112

NSN

5961-00-889-4112

MFG

THALES

Description

OVERALL DIAMETER: 0.335 INCHES NOMINAL
OVERALL HEIGHT: 0.260 INCHES NOMINAL
SPECIAL FEATURES: DUAL,SILICON,NPN,TRANSISTOR; 6LEADS
SPECIFICATION/STANDARD DATA: 80131-RELEASE3487 MANUFACTURERS SPECIFICATION

417-4-98439-001

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961008894112

NSN

5961-00-889-4112

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417-4-98439-001

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961008894112

NSN

5961-00-889-4112

MFG

ZARLINK SEMICONDUCTOR LIMITED

Description

OVERALL DIAMETER: 0.335 INCHES NOMINAL
OVERALL HEIGHT: 0.260 INCHES NOMINAL
SPECIAL FEATURES: DUAL,SILICON,NPN,TRANSISTOR; 6LEADS
SPECIFICATION/STANDARD DATA: 80131-RELEASE3487 MANUFACTURERS SPECIFICATION

2N1486

TRANSISTOR

NSN, MFG P/N

5961008894120

NSN

5961-00-889-4120

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2N1486

TRANSISTOR

NSN, MFG P/N

5961008894120

NSN

5961-00-889-4120

MFG

RCA CORP DISTRIBUTION AND SPECIAL PRODUCTS

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1486
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-180
OVERALL DIAMETER: 0.550 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/180 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.281 INCHES NOMINAL
TERMINAL LENGTH: 0.360 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 55.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 12.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

2N1486USA

TRANSISTOR

NSN, MFG P/N

5961008894120

NSN

5961-00-889-4120

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2N1486USA

TRANSISTOR

NSN, MFG P/N

5961008894120

NSN

5961-00-889-4120

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1486
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-180
OVERALL DIAMETER: 0.550 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/180 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.281 INCHES NOMINAL
TERMINAL LENGTH: 0.360 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 55.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 12.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

352-9088-000

TRANSISTOR

NSN, MFG P/N

5961008894120

NSN

5961-00-889-4120

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352-9088-000

TRANSISTOR

NSN, MFG P/N

5961008894120

NSN

5961-00-889-4120

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1486
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-180
OVERALL DIAMETER: 0.550 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/180 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.281 INCHES NOMINAL
TERMINAL LENGTH: 0.360 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 55.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 12.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

5961008894120

TRANSISTOR

NSN, MFG P/N

5961008894120

NSN

5961-00-889-4120

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5961008894120

TRANSISTOR

NSN, MFG P/N

5961008894120

NSN

5961-00-889-4120

MFG

E.C.A ETABLISSEMENT CENTRAL DES APPROVISIONNEMENTS DES FORCES ARMEES

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1486
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-180
OVERALL DIAMETER: 0.550 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/180 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.281 INCHES NOMINAL
TERMINAL LENGTH: 0.360 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 55.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 12.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

75-269-001

TRANSISTOR

NSN, MFG P/N

5961008894120

NSN

5961-00-889-4120

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75-269-001

TRANSISTOR

NSN, MFG P/N

5961008894120

NSN

5961-00-889-4120

MFG

MICROWAVE ENGINEERING CORPORATION DBA MICROWAVE RESEARCH

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1486
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-180
OVERALL DIAMETER: 0.550 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/180 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.281 INCHES NOMINAL
TERMINAL LENGTH: 0.360 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 55.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 12.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

JAN2N1486

TRANSISTOR

NSN, MFG P/N

5961008894120

NSN

5961-00-889-4120

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JAN2N1486

TRANSISTOR

NSN, MFG P/N

5961008894120

NSN

5961-00-889-4120

MFG

JOINT ARMY-NAVY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1486
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-180
OVERALL DIAMETER: 0.550 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/180 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.281 INCHES NOMINAL
TERMINAL LENGTH: 0.360 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 55.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 12.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

JAN2N1486A

TRANSISTOR

NSN, MFG P/N

5961008894120

NSN

5961-00-889-4120

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JAN2N1486A

TRANSISTOR

NSN, MFG P/N

5961008894120

NSN

5961-00-889-4120

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1486
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-180
OVERALL DIAMETER: 0.550 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/180 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.281 INCHES NOMINAL
TERMINAL LENGTH: 0.360 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 55.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 12.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

084-20015-006

TRANSISTOR

NSN, MFG P/N

5961008894274

NSN

5961-00-889-4274

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084-20015-006

TRANSISTOR

NSN, MFG P/N

5961008894274

NSN

5961-00-889-4274

MFG

LH ENTERPRISE

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1183A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-143
NONDEFINITIVE SPEC/STD DATA: 2N1183A TYPE
OVERALL DIAMETER: 0.550 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 7.5 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/143 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.136 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
TERMINAL LENGTH: 0.360 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND -1.2 MAXIMUM EMITTER TO BASE VOLTAGE,
~1: FLOATING POTENTIAL, DC WITH COLLECTOR BIASED IN REVERSE DIRECTION WITH RESPECT TO THE BASE

2N1183

TRANSISTOR

NSN, MFG P/N

5961008894274

NSN

5961-00-889-4274

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2N1183

TRANSISTOR

NSN, MFG P/N

5961008894274

NSN

5961-00-889-4274

MFG

INTERSIL CORPORATION

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1183A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-143
NONDEFINITIVE SPEC/STD DATA: 2N1183A TYPE
OVERALL DIAMETER: 0.550 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 7.5 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/143 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.136 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
TERMINAL LENGTH: 0.360 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND -1.2 MAXIMUM EMITTER TO BASE VOLTAGE,
~1: FLOATING POTENTIAL, DC WITH COLLECTOR BIASED IN REVERSE DIRECTION WITH RESPECT TO THE BASE

JAN2N1183A

TRANSISTOR

NSN, MFG P/N

5961008894274

NSN

5961-00-889-4274

View More Info

JAN2N1183A

TRANSISTOR

NSN, MFG P/N

5961008894274

NSN

5961-00-889-4274

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1183A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-143
NONDEFINITIVE SPEC/STD DATA: 2N1183A TYPE
OVERALL DIAMETER: 0.550 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 7.5 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/143 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.136 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
TERMINAL LENGTH: 0.360 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND -1.2 MAXIMUM EMITTER TO BASE VOLTAGE,
~1: FLOATING POTENTIAL, DC WITH COLLECTOR BIASED IN REVERSE DIRECTION WITH RESPECT TO THE BASE

JAN2N1183AA

TRANSISTOR

NSN, MFG P/N

5961008894274

NSN

5961-00-889-4274

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JAN2N1183AA

TRANSISTOR

NSN, MFG P/N

5961008894274

NSN

5961-00-889-4274

MFG

ADELCO ELEKTRONIK GMBH

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1183A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-143
NONDEFINITIVE SPEC/STD DATA: 2N1183A TYPE
OVERALL DIAMETER: 0.550 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 7.5 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/143 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.136 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
TERMINAL LENGTH: 0.360 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND -1.2 MAXIMUM EMITTER TO BASE VOLTAGE,
~1: FLOATING POTENTIAL, DC WITH COLLECTOR BIASED IN REVERSE DIRECTION WITH RESPECT TO THE BASE

940595-3

TRANSISTOR

NSN, MFG P/N

5961008897230

NSN

5961-00-889-7230

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940595-3

TRANSISTOR

NSN, MFG P/N

5961008897230

NSN

5961-00-889-7230

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS

Description

DESIGN CONTROL REFERENCE: 940595-3
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 94580
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

S4159

TRANSISTOR

NSN, MFG P/N

5961008897230

NSN

5961-00-889-7230

View More Info

S4159

TRANSISTOR

NSN, MFG P/N

5961008897230

NSN

5961-00-889-7230

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

DESIGN CONTROL REFERENCE: 940595-3
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 94580
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

6005560

TRANSISTOR

NSN, MFG P/N

5961008897231

NSN

5961-00-889-7231

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6005560

TRANSISTOR

NSN, MFG P/N

5961008897231

NSN

5961-00-889-7231

MFG

MEGGITT AIRCRAFT BRAKING SYSTEMS CORPORATION DBA MABS

9524706

TRANSISTOR

NSN, MFG P/N

5961008897231

NSN

5961-00-889-7231

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9524706

TRANSISTOR

NSN, MFG P/N

5961008897231

NSN

5961-00-889-7231

MFG

GOODYEAR TIRE AND RUBBER CO THE

HA7528

TRANSISTOR

NSN, MFG P/N

5961008897231

NSN

5961-00-889-7231

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HA7528

TRANSISTOR

NSN, MFG P/N

5961008897231

NSN

5961-00-889-7231

MFG

SEMICONDUCTOR TECHNOLOGY INC DBA S T I

1N3022B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008897779

NSN

5961-00-889-7779

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1N3022B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008897779

NSN

5961-00-889-7779

MFG

DURO CONSOLIDATED CO

Description

CURRENT RATING PER CHARACTERISTIC: 21.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DESIGN CONTROL REFERENCE: 941948-7
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 94580
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.035 INCHES MAXIMUM
TERMINAL LENGTH: 1.350 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

941948-7

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008897779

NSN

5961-00-889-7779

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941948-7

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961008897779

NSN

5961-00-889-7779

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS

Description

CURRENT RATING PER CHARACTERISTIC: 21.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DESIGN CONTROL REFERENCE: 941948-7
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 94580
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.035 INCHES MAXIMUM
TERMINAL LENGTH: 1.350 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE