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5961-00-935-4963

20 Products

ST9661

TRANSISTOR

NSN, MFG P/N

5961009354963

NSN

5961-00-935-4963

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ST9661

TRANSISTOR

NSN, MFG P/N

5961009354963

NSN

5961-00-935-4963

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N3500
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/366
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/366 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 150.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

7902834-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009354912

NSN

5961-00-935-4912

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7902834-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009354912

NSN

5961-00-935-4912

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3890
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/304
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/304 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

JAN1N3889

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009354912

NSN

5961-00-935-4912

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JAN1N3889

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009354912

NSN

5961-00-935-4912

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3890
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/304
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/304 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

JAN1N3890A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009354912

NSN

5961-00-935-4912

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JAN1N3890A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009354912

NSN

5961-00-935-4912

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3890
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/304
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/304 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

05C0119G03

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009354939

NSN

5961-00-935-4939

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05C0119G03

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009354939

NSN

5961-00-935-4939

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 175.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3890R
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/304
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-C-19500/304 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

11-10491-01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009354939

NSN

5961-00-935-4939

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11-10491-01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009354939

NSN

5961-00-935-4939

MFG

COMPAQ FEDERAL LLC

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 175.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3890R
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/304
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-C-19500/304 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

246157-0001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009354939

NSN

5961-00-935-4939

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246157-0001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009354939

NSN

5961-00-935-4939

MFG

THALES ATM INC.

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 175.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3890R
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/304
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-C-19500/304 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

999/4/43076/212

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009354939

NSN

5961-00-935-4939

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999/4/43076/212

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009354939

NSN

5961-00-935-4939

MFG

SELEX GALILEO LTD

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 175.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3890R
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/304
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-C-19500/304 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

AG1031244

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009354939

NSN

5961-00-935-4939

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AG1031244

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009354939

NSN

5961-00-935-4939

MFG

ROHDE & SCHWARZ GMBH & CO. KG

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 175.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3890R
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/304
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-C-19500/304 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

JAN1N3890R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009354939

NSN

5961-00-935-4939

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JAN1N3890R

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009354939

NSN

5961-00-935-4939

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 175.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3890R
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/304
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-C-19500/304 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

JAN1N3890RA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009354939

NSN

5961-00-935-4939

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JAN1N3890RA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009354939

NSN

5961-00-935-4939

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 175.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3890R
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/304
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-C-19500/304 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

NSR5252

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009354939

NSN

5961-00-935-4939

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NSR5252

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009354939

NSN

5961-00-935-4939

MFG

DIODES INC

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 175.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3890R
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/304
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-C-19500/304 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

SR612K410200G

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009354939

NSN

5961-00-935-4939

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SR612K410200G

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009354939

NSN

5961-00-935-4939

MFG

RAYTHEON SYSTEMS LTD

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 175.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3890R
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/304
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-C-19500/304 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

2N3500

TRANSISTOR

NSN, MFG P/N

5961009354963

NSN

5961-00-935-4963

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2N3500

TRANSISTOR

NSN, MFG P/N

5961009354963

NSN

5961-00-935-4963

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N3500
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/366
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/366 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 150.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

352-7500-550

TRANSISTOR

NSN, MFG P/N

5961009354963

NSN

5961-00-935-4963

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352-7500-550

TRANSISTOR

NSN, MFG P/N

5961009354963

NSN

5961-00-935-4963

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N3500
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/366
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/366 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 150.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

418955-3

TRANSISTOR

NSN, MFG P/N

5961009354963

NSN

5961-00-935-4963

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418955-3

TRANSISTOR

NSN, MFG P/N

5961009354963

NSN

5961-00-935-4963

MFG

RAYTHEON COMPANY

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N3500
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/366
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/366 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 150.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

436556

TRANSISTOR

NSN, MFG P/N

5961009354963

NSN

5961-00-935-4963

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436556

TRANSISTOR

NSN, MFG P/N

5961009354963

NSN

5961-00-935-4963

MFG

RAYTHEON TECHNICAL SERVICES COMPANY

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N3500
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/366
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/366 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 150.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

44597 28103

TRANSISTOR

NSN, MFG P/N

5961009354963

NSN

5961-00-935-4963

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44597 28103

TRANSISTOR

NSN, MFG P/N

5961009354963

NSN

5961-00-935-4963

MFG

THALES DEFENCE DEUTSCHLAND GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N3500
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/366
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/366 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 150.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

JAN2N3500

TRANSISTOR

NSN, MFG P/N

5961009354963

NSN

5961-00-935-4963

View More Info

JAN2N3500

TRANSISTOR

NSN, MFG P/N

5961009354963

NSN

5961-00-935-4963

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N3500
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/366
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/366 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 150.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

JAN2N3500A

TRANSISTOR

NSN, MFG P/N

5961009354963

NSN

5961-00-935-4963

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JAN2N3500A

TRANSISTOR

NSN, MFG P/N

5961009354963

NSN

5961-00-935-4963

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N3500
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/366
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/366 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 150.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN