My Quote Request
5961-01-580-3493
20 Products
910108-106
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015803493
NSN
5961-01-580-3493
910108-106
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015803493
NSN
5961-01-580-3493
MFG
MOOG INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
A20FB3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015800629
NSN
5961-01-580-0629
MFG
AMERICAN MICROSEMICONDUCTOR INC
Description
III END ITEM IDENTIFICATION: B-1B AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ZENER DIODE
Related Searches:
CA35762-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015800737
NSN
5961-01-580-0737
CA35762-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015800737
NSN
5961-01-580-0737
MFG
MOOG INC.
Description
III END ITEM IDENTIFICATION: CA70608-001(19156), RECEIVER-TRANSMITTER
III PART NAME ASSIGNED BY CONTROLLING AGENCY: INAVY: DIODE, PIN; CAGE: DIODES, RF PIN SWITCH , SURFACE MOUNT; PIN SWITCH COMMON CATHODE
SPECIAL FEATURES: SUGGESTED SOURCE OF SUPPLY IS 1RA91 - AGILENT TECHNOLOGIES WHICH IS OBSOLETE; P/N HSMP-3824
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C84225-001
TRANSISTOR
NSN, MFG P/N
5961015800775
NSN
5961-01-580-0775
MFG
MOOG INC.
Description
III END ITEM IDENTIFICATION: CA70608-001(19156), RECEIVER-TRANSMITTER; AN/TRN-41
III PART NAME ASSIGNED BY CONTROLLING AGENCY: INAVY: TRANSISTOR, RF; CAGE 19156: RF TRANSISTOR
Related Searches:
TAN-250A
TRANSISTOR
NSN, MFG P/N
5961015800775
NSN
5961-01-580-0775
MFG
MICROSEMI CORP.-RF POWER PRODUCTS DIV MICROSEMI CORPORATION
Description
III END ITEM IDENTIFICATION: CA70608-001(19156), RECEIVER-TRANSMITTER; AN/TRN-41
III PART NAME ASSIGNED BY CONTROLLING AGENCY: INAVY: TRANSISTOR, RF; CAGE 19156: RF TRANSISTOR
Related Searches:
0912-25
TRANSISTOR
NSN, MFG P/N
5961015800779
NSN
5961-01-580-0779
MFG
MICROSEMI CORP.-RF POWER PRODUCTS DIV MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: CA70608-001(19156), RECEIVER-TRANSMITTER; AN/TRN-41
III PART NAME ASSIGNED BY CONTROLLING AGENCY: INAVY: TRANSISTOR, RF; CAGE 19156: RF TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
POWER RATING PER CHARACTERISTIC: 25.0 WATTS NOMINAL PULSE RF POWER
SPECIAL FEATURES: COMMON BASE BIPOLAR TRANSISTOR; 25 WATTS, 50 VOLTS, PULSED AVIONICS 960 - 1215 MHZ; STORAGE TEMP: M65.0/P150.0 DEG C; CASE OUTLINE: 55CX, STYLE 1
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC AND 50.0 NOMINAL SOURCE SUPPLY VOLTAGE
Related Searches:
C84347-001
TRANSISTOR
NSN, MFG P/N
5961015800779
NSN
5961-01-580-0779
MFG
MOOG INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: CA70608-001(19156), RECEIVER-TRANSMITTER; AN/TRN-41
III PART NAME ASSIGNED BY CONTROLLING AGENCY: INAVY: TRANSISTOR, RF; CAGE 19156: RF TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
POWER RATING PER CHARACTERISTIC: 25.0 WATTS NOMINAL PULSE RF POWER
SPECIAL FEATURES: COMMON BASE BIPOLAR TRANSISTOR; 25 WATTS, 50 VOLTS, PULSED AVIONICS 960 - 1215 MHZ; STORAGE TEMP: M65.0/P150.0 DEG C; CASE OUTLINE: 55CX, STYLE 1
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC AND 50.0 NOMINAL SOURCE SUPPLY VOLTAGE
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SR05
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015800968
NSN
5961-01-580-0968
MFG
SEMTECH CORPORATION
Description
FEATURES PROVIDED: HIGH POWER
FUNCTION FOR WHICH DESIGNED: AVALANCHE DIODE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: LOW CAPACITANCE TVS DIODE ARRAY
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS JUNCTION AND 125.0 DEG CELSIUS JUNCTION
OVERALL HEIGHT: 2.37 MILLIMETERS NOMINAL
OVERALL LENGTH: 2.90 MILLIMETERS NOMINAL
OVERALL WIDTH: 1.01 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPECIAL FEATURES: MOLDING COMPOUND FLAMMABILITY RATING = UL 94V-0
SPECIAL TEST FEATURES: PEAK PULSE POWER = 500 WATTS, PEAK PULSE CURRENT = 25 AMPS, PEAK FORWARD VOLTAGE = 1.5 VOLTS
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1N4001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015801049
NSN
5961-01-580-1049
1N4001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015801049
NSN
5961-01-580-1049
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 REPETITIVE PEAK REVERSE VOLTAGE
OPERATING TEMP RANGE: -55.0 TO 175.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: GENERAL PURPOSE RECTIFIER
SPECIAL FEATURES: LOW FORWARD VOLTAGE DROP & HIGH SURGE CURRENT CAPABILITY
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UF4007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015802138
NSN
5961-01-580-2138
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CAPACITANCE RATING IN PICOFARADS: 17.0 NOMINAL
FEATURES PROVIDED: HIGH POWER
III PART NAME ASSIGNED BY CONTROLLING AGENCY: FAST RECTIFIER
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS JUNCTION AND 150.0 DEG CELSIUS JUNCTION
SPECIAL FEATURES: STORAGE TEMPERATURE RANGE = -65 TO 150 CELSIUS (SAME AS OPERATING JUNCTION TEMPERATURE)
SPECIAL TEST FEATURES: HIGH SURGE CURRENT CAPABILITY, LOW FORWARD VOLTAGE DROP, HIGH RELIABILITY, HIGH CURRENT CAPABILITY
Related Searches:
6014291-001
TRANSISTOR
NSN, MFG P/N
5961015802194
NSN
5961-01-580-2194
MFG
BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.
Description
III END ITEM IDENTIFICATION: NSN 4920014955910
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR
MOUNTING METHOD: PRESS FIT
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 8 PIN
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IFN5911
TRANSISTOR
NSN, MFG P/N
5961015802194
NSN
5961-01-580-2194
MFG
INTERFET CORPORATION
Description
III END ITEM IDENTIFICATION: NSN 4920014955910
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR
MOUNTING METHOD: PRESS FIT
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 8 PIN
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BZG04-11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015802331
NSN
5961-01-580-2331
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES NOMINAL PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: COMBINED SYSTEM INTERIM ACC-RPC-SFP
OVERALL HEIGHT: 2.3 MILLIMETERS NOMINAL
OVERALL LENGTH: 5.5 MILLIMETERS NOMINAL
OVERALL WIDTH: 2.8 MILLIMETERS NOMINAL
SPECIAL FEATURES: JUNCTION TEMPERATURE: 150 DEG C; STORAGE TEMP. RANGE: M65/P150 DEG C; JUNCTION CAPACITANCE: 850 PF; GLASS PASSIVATED JUNCTION; STAND-OFF VOLTAGE RANGE: 8.2 V TO 200.0 V; LEAD-FREE COMPONENT; APRROX. WEIGHT: 77 MG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.4 MINIMUM BREAKDOWN VOLTAGE, DC AND 1.2 NOMINAL FORWARD VOLTAGE, DC
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MMSZ5248B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015802349
NSN
5961-01-580-2349
MFG
DIODES INC
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SURFACE MOUNT ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL AND TERMINAL
OVERALL HEIGHT: 1.0 MILLIMETERS MINIMUM AND 1.4 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.5 MILLIMETERS MINIMUM AND 3.8 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.4 MILLIMETERS MINIMUM AND 1.7 MILLIMETERS MAXIMUM
SPECIAL FEATURES: 500MW POWER DISSPIPATION, MEDIUM CURRENT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 17.1 MINIMUM REGULATOR VOLTAGE, DC AND 18.9 MAXIMUM REGULATOR VOLTAGE, DC
Related Searches:
91847348
TRANSISTOR
NSN, MFG P/N
5961015802597
NSN
5961-01-580-2597
MFG
THALES
Description
III END ITEM IDENTIFICATION: RECEIVER TRANSMITTER ARC222
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NEXT HIGHER ASSEMBLY 724546
Related Searches:
TN2510N8-G
TRANSISTOR
NSN, MFG P/N
5961015802597
NSN
5961-01-580-2597
MFG
SUPERTEX INC.
Description
III END ITEM IDENTIFICATION: RECEIVER TRANSMITTER ARC222
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NEXT HIGHER ASSEMBLY 724546
Related Searches:
KSP2907A
TRANSISTOR
NSN, MFG P/N
5961015802632
NSN
5961-01-580-2632
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
FUNCTION FOR WHICH DESIGNED: AMPLIFIER
III PART NAME ASSIGNED BY CONTROLLING AGENCY: PNP GENERAL PURPOSE AMPLIFIER
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
OVERALL HEIGHT: 4.58 MILLIMETERS NOMINAL
OVERALL LENGTH: 19.05 MILLIMETERS NOMINAL
SPECIAL FEATURES: COLLECTOR-EMITTER VOLTAGE = 60V, COLLECTOR POWER DISSIPATION = 625MW
SPECIAL TEST FEATURES: 3 TERMINALS (PINS) = EMITTER, BASE AND COLLECTOR
TERMINAL LENGTH: 14.47 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
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6H11200009A
TRANSISTOR
NSN, MFG P/N
5961015802845
NSN
5961-01-580-2845
MFG
MPC PRODUCTS CORPORATION DBA WOODWARD MPC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 40.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.730 INCHES NOMINAL
OVERALL WIDTH: 0.620 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN; BODY HEIGHT: 0.510 IN. MAX
TERMINAL LENGTH: 0.250 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
TRANSFER RATIO: 200.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.00 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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MBR0530
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015803475
NSN
5961-01-580-3475
MBR0530
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015803475
NSN
5961-01-580-3475
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: SCHOTTKY RECTIFIER
SPECIAL FEATURES: 0.5 AMPERE, LOW FORWARD VOLTAGE, LESS THAN 430 MV
Related Searches:
1N4733A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015803493
NSN
5961-01-580-3493
MFG
VISHAY INTERTECHNOLOGY INC.
Description
SEMICONDUCTOR DEVICE,DIODE