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5961-00-952-2286

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CD3146

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009522286

NSN

5961-00-952-2286

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CD3146

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009522286

NSN

5961-00-952-2286

MFG

TELCOM SEMICONDUCTOR INC

Description

DESIGN CONTROL REFERENCE: CD3146
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 15818
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

X163B4-8

TRANSISTOR

NSN, MFG P/N

5961009518877

NSN

5961-00-951-8877

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X163B4-8

TRANSISTOR

NSN, MFG P/N

5961009518877

NSN

5961-00-951-8877

MFG

HORIZON AEROSPACE LLC DBA MAGNETICS DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1716
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-263
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/263 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC AND 1.0 MAXIMUM DC, OPEN-CIRCUIT VOLTAGE, FLOATING POTENTIAL, BETWEEN THE COLLECTOR AND BASE, WITH THE EMITTER BIASED IN THE REVERSE DIRECTION WITH RESPECT TO THE BASE

2247916-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009519028

NSN

5961-00-951-9028

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2247916-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009519028

NSN

5961-00-951-9028

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MINIMUM HOLDING CURRENT, INSTANTANEOUS AND 15.00 MILLIAMPERES MAXIMUM HOLDING CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL REGULATOR VOLTAGE

4E20M8

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009519028

NSN

5961-00-951-9028

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4E20M8

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009519028

NSN

5961-00-951-9028

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MINIMUM HOLDING CURRENT, INSTANTANEOUS AND 15.00 MILLIAMPERES MAXIMUM HOLDING CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL REGULATOR VOLTAGE

1N3022A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009519652

NSN

5961-00-951-9652

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1N3022A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009519652

NSN

5961-00-951-9652

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N3022A TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

65A7A70-1

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961009519704

NSN

5961-00-951-9704

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65A7A70-1

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961009519704

NSN

5961-00-951-9704

MFG

NAVAL AIR WARFARE CENTER AIRCRAFT DIV

265-540300

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009520101

NSN

5961-00-952-0101

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265-540300

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009520101

NSN

5961-00-952-0101

MFG

BOEING COMPANY THE DBA BOEING

Description

DESIGN CONTROL REFERENCE: 265-540300
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 43999
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD W/TERMINAL LUG
THE MANUFACTURERS DATA:

2N1204A

TRANSISTOR

NSN, MFG P/N

5961009520410

NSN

5961-00-952-0410

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2N1204A

TRANSISTOR

NSN, MFG P/N

5961009520410

NSN

5961-00-952-0410

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE3485 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

2N1535A

TRANSISTOR

NSN, MFG P/N

5961009520433

NSN

5961-00-952-0433

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2N1535A

TRANSISTOR

NSN, MFG P/N

5961009520433

NSN

5961-00-952-0433

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE2903 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

2N721

TRANSISTOR

NSN, MFG P/N

5961009520674

NSN

5961-00-952-0674

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2N721

TRANSISTOR

NSN, MFG P/N

5961009520674

NSN

5961-00-952-0674

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE3529 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

RELEASE 3529

TRANSISTOR

NSN, MFG P/N

5961009520674

NSN

5961-00-952-0674

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RELEASE 3529

TRANSISTOR

NSN, MFG P/N

5961009520674

NSN

5961-00-952-0674

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE3529 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

1021K

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009520753

NSN

5961-00-952-0753

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1021K

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009520753

NSN

5961-00-952-0753

MFG

SAGE LABORATORIES INC.

Description

ACCOMMODATED EQUIPMENT IDENTIFYING NUMBER: IN21E
COAXIAL CONNECTOR SERIES DESIGNATION: N
INPUT CONTACT TYPE: MALE
INPUT TERMINAL TYPE: COAXIAL CABLE
OPERATING FREQUENCY: 40.0 MEGAHERTZ MINIMUM AND 2.0 GIGAHERTZ MAXIMUM
OUTPUT COAXIAL CONNECTION SERIES DESIGNATION: BNC
OUTPUT CONTACT TYPE: FEMALE
OUTPUT TERMINAL TYPE: COAXIAL CABLE
OVERALL DIAMETER: 0.824 INCHES NOMINAL
OVERALL LENGTH: 2.359 INCHES NOMINAL

9747151-2

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009520753

NSN

5961-00-952-0753

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9747151-2

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961009520753

NSN

5961-00-952-0753

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

ACCOMMODATED EQUIPMENT IDENTIFYING NUMBER: IN21E
COAXIAL CONNECTOR SERIES DESIGNATION: N
INPUT CONTACT TYPE: MALE
INPUT TERMINAL TYPE: COAXIAL CABLE
OPERATING FREQUENCY: 40.0 MEGAHERTZ MINIMUM AND 2.0 GIGAHERTZ MAXIMUM
OUTPUT COAXIAL CONNECTION SERIES DESIGNATION: BNC
OUTPUT CONTACT TYPE: FEMALE
OUTPUT TERMINAL TYPE: COAXIAL CABLE
OVERALL DIAMETER: 0.824 INCHES NOMINAL
OVERALL LENGTH: 2.359 INCHES NOMINAL

202894-019

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009521067

NSN

5961-00-952-1067

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202894-019

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009521067

NSN

5961-00-952-1067

MFG

XY RESOURCES INC DBA TELECOM INSTALLATION DIV

202894-19

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009521067

NSN

5961-00-952-1067

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202894-19

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009521067

NSN

5961-00-952-1067

MFG

STROMBERG-CARLSON CORP A PLESSEY TELECOMMUNICATIONS CO

SV100A1

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009521067

NSN

5961-00-952-1067

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SV100A1

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961009521067

NSN

5961-00-952-1067

MFG

MEAS US LLC DBA MEASUREMENT SPECIALTIES DIV TEMPERATURE PRODUCTS GROUP

1912-0004

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009521078

NSN

5961-00-952-1078

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1912-0004

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009521078

NSN

5961-00-952-1078

MFG

HEWLETT PACKARD CO

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES NOMINAL
OVERALL LENGTH: 0.100 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

34301

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009521078

NSN

5961-00-952-1078

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34301

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009521078

NSN

5961-00-952-1078

MFG

INTERSIL CORPORATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES NOMINAL
OVERALL LENGTH: 0.100 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

STD622

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009521078

NSN

5961-00-952-1078

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STD622

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009521078

NSN

5961-00-952-1078

MFG

GPD OPTOELECTRONICS CORP.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES NOMINAL
OVERALL LENGTH: 0.100 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

10018908-004

TRANSISTOR

NSN, MFG P/N

5961009521953

NSN

5961-00-952-1953

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10018908-004

TRANSISTOR

NSN, MFG P/N

5961009521953

NSN

5961-00-952-1953

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

DESIGN CONTROL REFERENCE: 10018908-004
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 18876
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA: