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5961-01-365-3410
20 Products
4172983P1-4
TRANSISTOR
NSN, MFG P/N
5961013653410
NSN
5961-01-365-3410
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
TRANSISTOR
Related Searches:
990016
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013651107
NSN
5961-01-365-1107
MFG
PERILLO INDUSTRIES INC DBA CENTURY ELECTRONICS
Description
DESIGN CONTROL REFERENCE: 990016
III END ITEM IDENTIFICATION: TERMINAL DOPPLER WEATHER RADAR
MANUFACTURERS CODE: 50264
THE MANUFACTURERS DATA:
Related Searches:
SC3BK6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013651107
NSN
5961-01-365-1107
MFG
REVLON INC
Description
DESIGN CONTROL REFERENCE: 990016
III END ITEM IDENTIFICATION: TERMINAL DOPPLER WEATHER RADAR
MANUFACTURERS CODE: 50264
THE MANUFACTURERS DATA:
Related Searches:
3131457G001
TRANSISTOR
NSN, MFG P/N
5961013651350
NSN
5961-01-365-1350
MFG
ITT CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES NOMINAL DRAIN CURRENT
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 28527
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 3131457G001
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.790 INCHES MINIMUM AND 0.800 INCHES MAXIMUM
OVERALL WIDTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 28527-3131457G001 MANUFACTURERS SOURCE CONTROL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL DRAIN TO SOURCE VOLTAGE
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OM1100SA
TRANSISTOR
NSN, MFG P/N
5961013651350
NSN
5961-01-365-1350
MFG
INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES NOMINAL DRAIN CURRENT
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 28527
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 3131457G001
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.790 INCHES MINIMUM AND 0.800 INCHES MAXIMUM
OVERALL WIDTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 28527-3131457G001 MANUFACTURERS SOURCE CONTROL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL DRAIN TO SOURCE VOLTAGE
Related Searches:
3131718G001
TRANSISTOR
NSN, MFG P/N
5961013651351
NSN
5961-01-365-1351
MFG
ITT CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 4.50 AMPERES NOMINAL DRAIN CURRENT AND 18.00 AMPERES NOMINAL OFF-STATE CURRENT, PEAK
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.275 INCHES MAXIMUM
OVERALL LENGTH: 0.645 INCHES MINIMUM AND 0.675 INCHES MAXIMUM
OVERALL WIDTH: 0.415 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 16.0 NOMINAL GATE TO SOURCE VOLTAGE
Related Searches:
OM3074ST
TRANSISTOR
NSN, MFG P/N
5961013651351
NSN
5961-01-365-1351
MFG
INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 4.50 AMPERES NOMINAL DRAIN CURRENT AND 18.00 AMPERES NOMINAL OFF-STATE CURRENT, PEAK
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.275 INCHES MAXIMUM
OVERALL LENGTH: 0.645 INCHES MINIMUM AND 0.675 INCHES MAXIMUM
OVERALL WIDTH: 0.415 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 16.0 NOMINAL GATE TO SOURCE VOLTAGE
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1N6518
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013651352
NSN
5961-01-365-1352
MFG
VOLTAGE MULTIPLIERS INC. DBA V M I
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: LEAD MATERIAL SILVER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.155 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 NOMINAL FORWARD VOLTAGE, DC
Related Searches:
3131489G001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013651352
NSN
5961-01-365-1352
3131489G001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013651352
NSN
5961-01-365-1352
MFG
ITT CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: LEAD MATERIAL SILVER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.155 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 NOMINAL FORWARD VOLTAGE, DC
Related Searches:
3131437G001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013651353
NSN
5961-01-365-1353
3131437G001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013651353
NSN
5961-01-365-1353
MFG
ITT CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
(NON-CORE DATA) DUMMY TERMINAL QUANTITY: 2
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES NOMINAL DRAIN CURRENT AND 2.00 AMPERES NOMINAL PEAK REPETITIVE OFF-STATE CURRENT ALL SEMICONDUCTOR
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.125 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.792 INCHES MINIMUM AND 0.808 INCHES MAXIMUM
OVERALL WIDTH: 0.285 INCHES MINIMUM AND 0.298 INCHES MAXIMUM
TERMINAL LENGTH: 0.135 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 12 PIN
Related Searches:
H00247-7
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013651353
NSN
5961-01-365-1353
H00247-7
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013651353
NSN
5961-01-365-1353
MFG
SUPERTEX INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
(NON-CORE DATA) DUMMY TERMINAL QUANTITY: 2
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES NOMINAL DRAIN CURRENT AND 2.00 AMPERES NOMINAL PEAK REPETITIVE OFF-STATE CURRENT ALL SEMICONDUCTOR
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.125 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.792 INCHES MINIMUM AND 0.808 INCHES MAXIMUM
OVERALL WIDTH: 0.285 INCHES MINIMUM AND 0.298 INCHES MAXIMUM
TERMINAL LENGTH: 0.135 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 12 PIN
Related Searches:
3130522G001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013652275
NSN
5961-01-365-2275
3130522G001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013652275
NSN
5961-01-365-2275
MFG
ITT CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 5.50 AMPERES OFF-STATE CURRENT, INSTANTANEOUS
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 PEAK INVERSE VOLTAGE AND 1.1 FORWARD VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.600 INCHES MAXIMUM
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.450 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TERMINAL LUG
Related Searches:
SA9490
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013652275
NSN
5961-01-365-2275
SA9490
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013652275
NSN
5961-01-365-2275
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 5.50 AMPERES OFF-STATE CURRENT, INSTANTANEOUS
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 PEAK INVERSE VOLTAGE AND 1.1 FORWARD VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.600 INCHES MAXIMUM
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.450 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TERMINAL LUG
Related Searches:
990001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013652338
NSN
5961-01-365-2338
MFG
PERILLO INDUSTRIES INC DBA CENTURY ELECTRONICS
Description
DESIGN CONTROL REFERENCE: 990001
III END ITEM IDENTIFICATION: TERMINAL DOPPLER WEATHER RADAR
MANUFACTURERS CODE: 50264
THE MANUFACTURERS DATA:
Related Searches:
990006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013652339
NSN
5961-01-365-2339
MFG
PERILLO INDUSTRIES INC DBA CENTURY ELECTRONICS
Description
DESIGN CONTROL REFERENCE: 990006
III END ITEM IDENTIFICATION: TERMINAL DOPPLER WEATHER RADAR
MANUFACTURERS CODE: 50264
THE MANUFACTURERS DATA:
Related Searches:
23-45-000008
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013652445
NSN
5961-01-365-2445
23-45-000008
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013652445
NSN
5961-01-365-2445
MFG
THOMAS & BETTS POWER SOLUTIONS LLC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
Related Searches:
G500R2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013652446
NSN
5961-01-365-2446
G500R2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013652446
NSN
5961-01-365-2446
MFG
GPD OPTOELECTRONICS CORP.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 500.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: 1 HALF-WAVE 1 PHASE
MATERIAL: GERMANIUM
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 2.300 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES MINIMUM AND 1.060 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 WIRE LEAD
Related Searches:
4172983P1-1
TRANSISTOR
NSN, MFG P/N
5961013653407
NSN
5961-01-365-3407
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
TRANSISTOR
Related Searches:
4172983P1-2
TRANSISTOR
NSN, MFG P/N
5961013653408
NSN
5961-01-365-3408
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
TRANSISTOR
Related Searches:
4172983P1-3
TRANSISTOR
NSN, MFG P/N
5961013653409
NSN
5961-01-365-3409
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
TRANSISTOR