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5961-01-024-8205

20 Products

E-01543B7

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010248205

NSN

5961-01-024-8205

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E-01543B7

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010248205

NSN

5961-01-024-8205

MFG

DEPARTMENT OF THE NAVY NAVAL UNDERSEA WARFARE CENTER NEW LONDON DIV

Description

DESIGN CONTROL REFERENCE: E-01543B7
MANUFACTURERS CODE: 88594
SPECIAL FEATURES: THREE 1N465A DIODES,MTD BETWEEN SOLDER LUG TERMINALS,PLUG-IN TYPE MTG BOARD,ENCAPSULATED AFTER ASSY;
THE MANUFACTURERS DATA:

L02139

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010245793

NSN

5961-01-024-5793

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L02139

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010245793

NSN

5961-01-024-5793

MFG

DLA LAND AND MARITIME

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 1.60 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-8
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL DIAMETER: 1.063 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.240 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH RQMT OF DESC PRODUCTION STD NO. L02139 FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY
TERMINAL TYPE AND QUANTITY: 1 INSULATED WIRE LEAD W/TERMINAL LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK

204030

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010245795

NSN

5961-01-024-5795

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204030

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010245795

NSN

5961-01-024-5795

MFG

CIPHER DATA PRODUCTS INC OEM MARKETING DIV

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL
DESIGN CONTROL REFERENCE: 2N6347A
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 04713
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.355 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE

2N6347A

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010245795

NSN

5961-01-024-5795

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2N6347A

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961010245795

NSN

5961-01-024-5795

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL
DESIGN CONTROL REFERENCE: 2N6347A
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 04713
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.355 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE

JAN1N4150

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010246495

NSN

5961-01-024-6495

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JAN1N4150

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010246495

NSN

5961-01-024-6495

MFG

MICRO USPD INC

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH RQMT OF DESC PRODUCTION STD NO. L02158 FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK

L02158

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010246495

NSN

5961-01-024-6495

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L02158

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010246495

NSN

5961-01-024-6495

MFG

DLA LAND AND MARITIME

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH RQMT OF DESC PRODUCTION STD NO. L02158 FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK

FET-102

TRANSISTOR

NSN, MFG P/N

5961010246664

NSN

5961-01-024-6664

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FET-102

TRANSISTOR

NSN, MFG P/N

5961010246664

NSN

5961-01-024-6664

MFG

ANTENNA RESEARCH ASSOCIATES INCORPORATED

341503

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010247292

NSN

5961-01-024-7292

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341503

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010247292

NSN

5961-01-024-7292

MFG

TELEMECHANICS INC

Description

DESIGN CONTROL REFERENCE: 341503
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 57712
MOUNTING METHOD: TERMINAL
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:

13003-22

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010247812

NSN

5961-01-024-7812

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13003-22

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010247812

NSN

5961-01-024-7812

MFG

SSI TECHNOLOGY INC.

Description

OVERALL HEIGHT: 0.850 INCHES MINIMUM AND 0.890 INCHES MAXIMUM
OVERALL LENGTH: 1.228 INCHES MINIMUM AND 2.270 INCHES MAXIMUM
OVERALL WIDTH: 1.725 INCHES MINIMUM AND 1.765 INCHES MAXIMUM

139-201-002

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010247812

NSN

5961-01-024-7812

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139-201-002

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010247812

NSN

5961-01-024-7812

MFG

L-3 COMMUNICATIONS CORPORATION DBA GLOBAL NETWORK SOLUTIONS DIV AYDIN COMMUNICATIONS DIVISION

Description

OVERALL HEIGHT: 0.850 INCHES MINIMUM AND 0.890 INCHES MAXIMUM
OVERALL LENGTH: 1.228 INCHES MINIMUM AND 2.270 INCHES MAXIMUM
OVERALL WIDTH: 1.725 INCHES MINIMUM AND 1.765 INCHES MAXIMUM

DMS 84009B

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010247812

NSN

5961-01-024-7812

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DMS 84009B

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010247812

NSN

5961-01-024-7812

MFG

DLA LAND AND MARITIME

Description

OVERALL HEIGHT: 0.850 INCHES MINIMUM AND 0.890 INCHES MAXIMUM
OVERALL LENGTH: 1.228 INCHES MINIMUM AND 2.270 INCHES MAXIMUM
OVERALL WIDTH: 1.725 INCHES MINIMUM AND 1.765 INCHES MAXIMUM

MDA1202

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010247812

NSN

5961-01-024-7812

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MDA1202

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010247812

NSN

5961-01-024-7812

MFG

FREESCALE SEMICONDUCTOR INC.

Description

OVERALL HEIGHT: 0.850 INCHES MINIMUM AND 0.890 INCHES MAXIMUM
OVERALL LENGTH: 1.228 INCHES MINIMUM AND 2.270 INCHES MAXIMUM
OVERALL WIDTH: 1.725 INCHES MINIMUM AND 1.765 INCHES MAXIMUM

1N4004

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010247921

NSN

5961-01-024-7921

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1N4004

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010247921

NSN

5961-01-024-7921

MFG

NOSKE-KAESER GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N5637

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010247924

NSN

5961-01-024-7924

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1N5637

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010247924

NSN

5961-01-024-7924

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 68.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.1 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS

803045-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010247924

NSN

5961-01-024-7924

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803045-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010247924

NSN

5961-01-024-7924

MFG

RAYTHEON COMPANY

Description

CURRENT RATING PER CHARACTERISTIC: 68.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.1 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS

900552-17

TRANSISTOR

NSN, MFG P/N

5961010248089

NSN

5961-01-024-8089

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900552-17

TRANSISTOR

NSN, MFG P/N

5961010248089

NSN

5961-01-024-8089

MFG

NORTHROP GRUMMAN LITEF GMBH DBA LITEF

947306-9061

TRANSISTOR

NSN, MFG P/N

5961010248089

NSN

5961-01-024-8089

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947306-9061

TRANSISTOR

NSN, MFG P/N

5961010248089

NSN

5961-01-024-8089

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

450900-1363

TRANSISTOR

NSN, MFG P/N

5961010248091

NSN

5961-01-024-8091

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450900-1363

TRANSISTOR

NSN, MFG P/N

5961010248091

NSN

5961-01-024-8091

MFG

NORTHROP GRUMMAN LITEF GMBH DBA LITEF

BFX79

TRANSISTOR

NSN, MFG P/N

5961010248091

NSN

5961-01-024-8091

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BFX79

TRANSISTOR

NSN, MFG P/N

5961010248091

NSN

5961-01-024-8091

MFG

SGS MICROELETTRONICA SPA

E-01543B6

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961010248204

NSN

5961-01-024-8204

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E-01543B6

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961010248204

NSN

5961-01-024-8204

MFG

DEPARTMENT OF THE NAVY NAVAL UNDERSEA WARFARE CENTER NEW LONDON DIV

Description

DESIGN CONTROL REFERENCE: E-01543B6
MAJOR COMPONENTS: SEMICONDUCTOR DEVICE,DIODE 7; TERMINAL BOARD 1
MANUFACTURERS CODE: 88594
MOUNTING CONFIGURATION: PLUG-IN MOUNTED
SPECIAL FEATURES: ENCAPSULATE AFTER ASSEMBLY
THE MANUFACTURERS DATA: