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5961-01-061-3419

20 Products

SD1379-07H

TRANSISTOR

NSN, MFG P/N

5961010613419

NSN

5961-01-061-3419

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SD1379-07H

TRANSISTOR

NSN, MFG P/N

5961010613419

NSN

5961-01-061-3419

MFG

MICROSEMI CORP. - MONTGOMERYVILLE

Description

DESIGN CONTROL REFERENCE: 352-8504-022
INCLOSURE MATERIAL: CERAMIC AND METAL
MANUFACTURERS CODE: 13499
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN

8504022

TRANSISTOR

NSN, MFG P/N

5961010613419

NSN

5961-01-061-3419

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8504022

TRANSISTOR

NSN, MFG P/N

5961010613419

NSN

5961-01-061-3419

MFG

STMICROELECTRONICS INC

Description

DESIGN CONTROL REFERENCE: 352-8504-022
INCLOSURE MATERIAL: CERAMIC AND METAL
MANUFACTURERS CODE: 13499
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN

922-6504-012

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010613423

NSN

5961-01-061-3423

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922-6504-012

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010613423

NSN

5961-01-061-3423

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
DESIGN CONTROL REFERENCE: 922-6504-012
FEATURES PROVIDED: GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 13499
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM FORWARD VOLTAGE, PEAK

MA47886

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010613423

NSN

5961-01-061-3423

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MA47886

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010613423

NSN

5961-01-061-3423

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
DESIGN CONTROL REFERENCE: 922-6504-012
FEATURES PROVIDED: GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 13499
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM FORWARD VOLTAGE, PEAK

UM9334

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010613423

NSN

5961-01-061-3423

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UM9334

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010613423

NSN

5961-01-061-3423

MFG

MICRO USPD INC

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
DESIGN CONTROL REFERENCE: 922-6504-012
FEATURES PROVIDED: GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 13499
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM FORWARD VOLTAGE, PEAK

353-3055-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010613424

NSN

5961-01-061-3424

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353-3055-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010613424

NSN

5961-01-061-3424

MFG

FREESCALE SEMICONDUCTOR INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON

5082-9655

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010613429

NSN

5961-01-061-3429

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5082-9655

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010613429

NSN

5961-01-061-3429

MFG

HEWLETT PACKARD CO

Description

DESIGN CONTROL REFERENCE: QSCH-5531
III END ITEM IDENTIFICATION: AN/APR-38
MANUFACTURERS CODE: 50434
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
OVERALL HEIGHT: 0.003 INCHES MINIMUM AND 0.004 INCHES MAXIMUM
OVERALL LENGTH: 0.008 INCHES MINIMUM AND 0.010 INCHES MAXIMUM
OVERALL WIDTH: 0.007 INCHES MINIMUM AND 0.009 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
THE MANUFACTURERS DATA:

7540447P0001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010613429

NSN

5961-01-061-3429

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7540447P0001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010613429

NSN

5961-01-061-3429

MFG

LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS

Description

DESIGN CONTROL REFERENCE: QSCH-5531
III END ITEM IDENTIFICATION: AN/APR-38
MANUFACTURERS CODE: 50434
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
OVERALL HEIGHT: 0.003 INCHES MINIMUM AND 0.004 INCHES MAXIMUM
OVERALL LENGTH: 0.008 INCHES MINIMUM AND 0.010 INCHES MAXIMUM
OVERALL WIDTH: 0.007 INCHES MINIMUM AND 0.009 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
THE MANUFACTURERS DATA:

HSCH-5310

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010613429

NSN

5961-01-061-3429

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HSCH-5310

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010613429

NSN

5961-01-061-3429

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

DESIGN CONTROL REFERENCE: QSCH-5531
III END ITEM IDENTIFICATION: AN/APR-38
MANUFACTURERS CODE: 50434
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
OVERALL HEIGHT: 0.003 INCHES MINIMUM AND 0.004 INCHES MAXIMUM
OVERALL LENGTH: 0.008 INCHES MINIMUM AND 0.010 INCHES MAXIMUM
OVERALL WIDTH: 0.007 INCHES MINIMUM AND 0.009 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
THE MANUFACTURERS DATA:

6-6127-91

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010613430

NSN

5961-01-061-3430

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6-6127-91

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010613430

NSN

5961-01-061-3430

MFG

SKYWORKS SOLUTIONS INC.

Description

DESIGN CONTROL REFERENCE: 6-6127-91
III END ITEM IDENTIFICATION: R-2020/APR-38
MANUFACTURERS CODE: 17540
OVERALL LENGTH: 0.012 INCHES NOMINAL
OVERALL WIDTH: 0.012 INCHES NOMINAL
THE MANUFACTURERS DATA:

7540448P0001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010613430

NSN

5961-01-061-3430

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7540448P0001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010613430

NSN

5961-01-061-3430

MFG

LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS

Description

DESIGN CONTROL REFERENCE: 6-6127-91
III END ITEM IDENTIFICATION: R-2020/APR-38
MANUFACTURERS CODE: 17540
OVERALL LENGTH: 0.012 INCHES NOMINAL
OVERALL WIDTH: 0.012 INCHES NOMINAL
THE MANUFACTURERS DATA:

583R729H02

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010613433

NSN

5961-01-061-3433

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583R729H02

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010613433

NSN

5961-01-061-3433

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

(NON-CORE DATA) TEST DATA DOCUMENT: 97942-583R729 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 REVERSE VOLTAGE, TOTAL RMS AND 200.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.475 INCHES NOMINAL
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
SPECIAL FEATURES: ELECTROSTATIC SENSITIVE
TERMINAL TYPE AND QUANTITY: 5 TURRET

655-619

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010613433

NSN

5961-01-061-3433

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655-619

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010613433

NSN

5961-01-061-3433

MFG

MICRO USPD INC

Description

(NON-CORE DATA) TEST DATA DOCUMENT: 97942-583R729 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 REVERSE VOLTAGE, TOTAL RMS AND 200.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.475 INCHES NOMINAL
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
SPECIAL FEATURES: ELECTROSTATIC SENSITIVE
TERMINAL TYPE AND QUANTITY: 5 TURRET

SA7408

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010613433

NSN

5961-01-061-3433

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SA7408

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010613433

NSN

5961-01-061-3433

MFG

SEMTECH CORPORATION

Description

(NON-CORE DATA) TEST DATA DOCUMENT: 97942-583R729 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 REVERSE VOLTAGE, TOTAL RMS AND 200.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.475 INCHES NOMINAL
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
SPECIAL FEATURES: ELECTROSTATIC SENSITIVE
TERMINAL TYPE AND QUANTITY: 5 TURRET

SENB214

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010613433

NSN

5961-01-061-3433

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SENB214

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010613433

NSN

5961-01-061-3433

MFG

MILSCO MFG CO UNIT OF JASON INC

Description

(NON-CORE DATA) TEST DATA DOCUMENT: 97942-583R729 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 140.0 REVERSE VOLTAGE, TOTAL RMS AND 200.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.475 INCHES NOMINAL
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
SPECIAL FEATURES: ELECTROSTATIC SENSITIVE
TERMINAL TYPE AND QUANTITY: 5 TURRET

582R011H01

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010613434

NSN

5961-01-061-3434

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582R011H01

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961010613434

NSN

5961-01-061-3434

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

(NON-CORE DATA) TEST DATA DOCUMENT: 97942-582R011 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 150.00 AMPERES FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: AIRCRAFT, PHANTOM F-4, AIRCRAFT, AWACS, E-3A, AIRCRAFT, B-1B, AIRCRAFT, STRATOFORTRESS B-52
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.035 INCHES NOMINAL
OVERALL LENGTH: 2.000 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG

623-2635-001

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961010613725

NSN

5961-01-061-3725

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623-2635-001

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961010613725

NSN

5961-01-061-3725

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

INPUT TERMINAL TYPE: ANY ACCEPTABLE
OVERALL HEIGHT: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
OVERALL WIDTH: 0.425 INCHES NOMINAL

15-01883-00

TRANSISTOR

NSN, MFG P/N

5961010614141

NSN

5961-01-061-4141

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15-01883-00

TRANSISTOR

NSN, MFG P/N

5961010614141

NSN

5961-01-061-4141

MFG

COMPAQ FEDERAL LLC

Description

INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN

539274-4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010614143

NSN

5961-01-061-4143

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539274-4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010614143

NSN

5961-01-061-4143

MFG

RAYTHEON COMPANY

Description

FUNCTION FOR WHICH DESIGNED: RECTIFIER
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.420 INCHES NOMINAL
OVERALL WIDTH: 0.620 INCHES NOMINAL
TERMINAL LENGTH: 0.875 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD

SBR30

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010614143

NSN

5961-01-061-4143

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SBR30

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010614143

NSN

5961-01-061-4143

MFG

SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY

Description

FUNCTION FOR WHICH DESIGNED: RECTIFIER
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.420 INCHES NOMINAL
OVERALL WIDTH: 0.620 INCHES NOMINAL
TERMINAL LENGTH: 0.875 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD