My Quote Request
5961-01-068-7934
20 Products
BF357
TRANSISTOR
NSN, MFG P/N
5961010687934
NSN
5961-01-068-7934
MFG
COMMUNICATION SYSTEMS DIV NORTH AMERICAN PHILIPS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 22-6134
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 21793
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.188 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 130.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.300 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
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GEPSP003
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010688246
NSN
5961-01-068-8246
GEPSP003
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010688246
NSN
5961-01-068-8246
MFG
HUGHEY & PHILLIPS INC DBA HONEYWELL AIRPORT SYSTEMS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 0.65 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6000.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: U3003327-01
MANUFACTURERS CODE: 7X100
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -30.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.750 INCHES MAXIMUM
OVERALL LENGTH: 1.850 INCHES MAXIMUM
OVERALL WIDTH: 1.850 INCHES MAXIMUM
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; HERMETICALLY SEALED; ONE MOUNTING HOLE 0.250 IN. DIA; FUNCTION: RECTIFIER BRIDGE; REFERENCE DATA: 2CR1, TI 6850.80, FA 10264, PG 8-86;; 2CR1, TI 6850.79, FA 10229, PG 8-20;; 2CR1, TI 6850.74, FA 10096, PG 8-20;; 2CR1, TI
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
THE MANUFACTURERS DATA:
~1: 6850.74, FA 10096, PG 8-20;; 2CR1, TI 6850.34, FA 9628, PG 8-15
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H44
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010688246
NSN
5961-01-068-8246
MFG
L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 0.65 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6000.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: U3003327-01
MANUFACTURERS CODE: 7X100
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -30.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.750 INCHES MAXIMUM
OVERALL LENGTH: 1.850 INCHES MAXIMUM
OVERALL WIDTH: 1.850 INCHES MAXIMUM
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; HERMETICALLY SEALED; ONE MOUNTING HOLE 0.250 IN. DIA; FUNCTION: RECTIFIER BRIDGE; REFERENCE DATA: 2CR1, TI 6850.80, FA 10264, PG 8-86;; 2CR1, TI 6850.79, FA 10229, PG 8-20;; 2CR1, TI 6850.74, FA 10096, PG 8-20;; 2CR1, TI
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
THE MANUFACTURERS DATA:
~1: 6850.74, FA 10096, PG 8-20;; 2CR1, TI 6850.34, FA 9628, PG 8-15
Related Searches:
H441
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010688246
NSN
5961-01-068-8246
MFG
MICROPAC INDUSTRIES INC.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 0.65 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6000.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: U3003327-01
MANUFACTURERS CODE: 7X100
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -30.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.750 INCHES MAXIMUM
OVERALL LENGTH: 1.850 INCHES MAXIMUM
OVERALL WIDTH: 1.850 INCHES MAXIMUM
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; HERMETICALLY SEALED; ONE MOUNTING HOLE 0.250 IN. DIA; FUNCTION: RECTIFIER BRIDGE; REFERENCE DATA: 2CR1, TI 6850.80, FA 10264, PG 8-86;; 2CR1, TI 6850.79, FA 10229, PG 8-20;; 2CR1, TI 6850.74, FA 10096, PG 8-20;; 2CR1, TI
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
THE MANUFACTURERS DATA:
~1: 6850.74, FA 10096, PG 8-20;; 2CR1, TI 6850.34, FA 9628, PG 8-15
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RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010688246
NSN
5961-01-068-8246
HA-GEPSP003
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010688246
NSN
5961-01-068-8246
MFG
FLIGHT LIGHT INC .
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 0.65 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6000.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: U3003327-01
MANUFACTURERS CODE: 7X100
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -30.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.750 INCHES MAXIMUM
OVERALL LENGTH: 1.850 INCHES MAXIMUM
OVERALL WIDTH: 1.850 INCHES MAXIMUM
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; HERMETICALLY SEALED; ONE MOUNTING HOLE 0.250 IN. DIA; FUNCTION: RECTIFIER BRIDGE; REFERENCE DATA: 2CR1, TI 6850.80, FA 10264, PG 8-86;; 2CR1, TI 6850.79, FA 10229, PG 8-20;; 2CR1, TI 6850.74, FA 10096, PG 8-20;; 2CR1, TI
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
THE MANUFACTURERS DATA:
~1: 6850.74, FA 10096, PG 8-20;; 2CR1, TI 6850.34, FA 9628, PG 8-15
Related Searches:
U3003327-01
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010688246
NSN
5961-01-068-8246
U3003327-01
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010688246
NSN
5961-01-068-8246
MFG
NEW BEDFORD PANORAMEX CORP.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 0.65 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6000.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: U3003327-01
MANUFACTURERS CODE: 7X100
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -30.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.750 INCHES MAXIMUM
OVERALL LENGTH: 1.850 INCHES MAXIMUM
OVERALL WIDTH: 1.850 INCHES MAXIMUM
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; HERMETICALLY SEALED; ONE MOUNTING HOLE 0.250 IN. DIA; FUNCTION: RECTIFIER BRIDGE; REFERENCE DATA: 2CR1, TI 6850.80, FA 10264, PG 8-86;; 2CR1, TI 6850.79, FA 10229, PG 8-20;; 2CR1, TI 6850.74, FA 10096, PG 8-20;; 2CR1, TI
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
THE MANUFACTURERS DATA:
~1: 6850.74, FA 10096, PG 8-20;; 2CR1, TI 6850.34, FA 9628, PG 8-15
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95-4006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010688275
NSN
5961-01-068-8275
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.237 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.430 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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A531A068-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010688275
NSN
5961-01-068-8275
A531A068-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010688275
NSN
5961-01-068-8275
MFG
GEC-MARCONI ELECTRONIC SYSTEMS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.237 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.430 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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SBR-5230H
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010688275
NSN
5961-01-068-8275
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.237 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.430 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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804211-1
TRANSISTOR
NSN, MFG P/N
5961010688833
NSN
5961-01-068-8833
MFG
RAYTHEON COMPANY
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DETECTING SET,INFRARED,AN/AAS-36
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.479 INCHES MINIMUM AND 1.519 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TEST DATA DOCUMENT: 96214-804211 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
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SJ57454
TRANSISTOR
NSN, MFG P/N
5961010688833
NSN
5961-01-068-8833
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DETECTING SET,INFRARED,AN/AAS-36
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.479 INCHES MINIMUM AND 1.519 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TEST DATA DOCUMENT: 96214-804211 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
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SJ5745H
TRANSISTOR
NSN, MFG P/N
5961010688833
NSN
5961-01-068-8833
MFG
FREESCALE SEMICONDUCTOR INC.
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DETECTING SET,INFRARED,AN/AAS-36
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.479 INCHES MINIMUM AND 1.519 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TEST DATA DOCUMENT: 96214-804211 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
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63SE150
TRANSISTOR
NSN, MFG P/N
5961010688834
NSN
5961-01-068-8834
MFG
SOLITRON DEVICES INC.
Description
DESIGN CONTROL REFERENCE: 772608-2
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DETECTING SET,INFRARED,AN/AAS-36
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 96214
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 96214-772608 DRAWING
THE MANUFACTURERS DATA:
Related Searches:
772608-2
TRANSISTOR
NSN, MFG P/N
5961010688834
NSN
5961-01-068-8834
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: 772608-2
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DETECTING SET,INFRARED,AN/AAS-36
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 96214
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 96214-772608 DRAWING
THE MANUFACTURERS DATA:
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PP8543
TRANSISTOR
NSN, MFG P/N
5961010688834
NSN
5961-01-068-8834
MFG
MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION
Description
DESIGN CONTROL REFERENCE: 772608-2
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DETECTING SET,INFRARED,AN/AAS-36
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 96214
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 96214-772608 DRAWING
THE MANUFACTURERS DATA:
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SJ5762H2
TRANSISTOR
NSN, MFG P/N
5961010688834
NSN
5961-01-068-8834
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DESIGN CONTROL REFERENCE: 772608-2
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DETECTING SET,INFRARED,AN/AAS-36
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 96214
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 96214-772608 DRAWING
THE MANUFACTURERS DATA:
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SP10143
TRANSISTOR
NSN, MFG P/N
5961010688834
NSN
5961-01-068-8834
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN CONTROL REFERENCE: 772608-2
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DETECTING SET,INFRARED,AN/AAS-36
INCLOSURE MATERIAL: GLASS AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 96214
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 96214-772608 DRAWING
THE MANUFACTURERS DATA:
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12SE179
TRANSISTOR
NSN, MFG P/N
5961010688835
NSN
5961-01-068-8835
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 60.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 96214-801740 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 200.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
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801740-1
TRANSISTOR
NSN, MFG P/N
5961010688835
NSN
5961-01-068-8835
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 60.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 96214-801740 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 200.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
PP8392
TRANSISTOR
NSN, MFG P/N
5961010688835
NSN
5961-01-068-8835
MFG
MICROSEMI PPC INC
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 60.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 96214-801740 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 200.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC