My Quote Request
5961-01-069-4990
20 Products
NE02135
TRANSISTOR
NSN, MFG P/N
5961010694990
NSN
5961-01-069-4990
MFG
CALIFORNIA EASTERN LABS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: WHIDBEY ISLAND CLASS LSD; ENGINE, AIRCRAFT TF33-PW-102 (C-135E, EC-135H/K/P); WASP CLASS LHD; SUPPLY CLASS AOE; RADIO SET (A1815) (AN/GRC-193); RADIO SET (AN/PRC-104); NIMITZ CLASS CVN; RADIO SET (AN/MRC-138); AIRBORN MOBILE DIR AIR SPT CTL (2ID), 02M
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.071 INCHES MAXIMUM
OVERALL LENGTH: 0.268 INCHES NOMINAL
OVERALL WIDTH: 0.428 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN; WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
~1: JUL83)(AN/UYQ-3A); OSPREY CLASS MHC
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AK3006147
TRANSISTOR
NSN, MFG P/N
5961010694990
NSN
5961-01-069-4990
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: WHIDBEY ISLAND CLASS LSD; ENGINE, AIRCRAFT TF33-PW-102 (C-135E, EC-135H/K/P); WASP CLASS LHD; SUPPLY CLASS AOE; RADIO SET (A1815) (AN/GRC-193); RADIO SET (AN/PRC-104); NIMITZ CLASS CVN; RADIO SET (AN/MRC-138); AIRBORN MOBILE DIR AIR SPT CTL (2ID), 02M
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.071 INCHES MAXIMUM
OVERALL LENGTH: 0.268 INCHES NOMINAL
OVERALL WIDTH: 0.428 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN; WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
~1: JUL83)(AN/UYQ-3A); OSPREY CLASS MHC
Related Searches:
JAN2N6604
TRANSISTOR
NSN, MFG P/N
5961010694990
NSN
5961-01-069-4990
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: WHIDBEY ISLAND CLASS LSD; ENGINE, AIRCRAFT TF33-PW-102 (C-135E, EC-135H/K/P); WASP CLASS LHD; SUPPLY CLASS AOE; RADIO SET (A1815) (AN/GRC-193); RADIO SET (AN/PRC-104); NIMITZ CLASS CVN; RADIO SET (AN/MRC-138); AIRBORN MOBILE DIR AIR SPT CTL (2ID), 02M
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.071 INCHES MAXIMUM
OVERALL LENGTH: 0.268 INCHES NOMINAL
OVERALL WIDTH: 0.428 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN; WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
~1: JUL83)(AN/UYQ-3A); OSPREY CLASS MHC
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NE012135
TRANSISTOR
NSN, MFG P/N
5961010694990
NSN
5961-01-069-4990
MFG
NIPPON COMMUNICATION EQUIPMENT COMPA N
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: WHIDBEY ISLAND CLASS LSD; ENGINE, AIRCRAFT TF33-PW-102 (C-135E, EC-135H/K/P); WASP CLASS LHD; SUPPLY CLASS AOE; RADIO SET (A1815) (AN/GRC-193); RADIO SET (AN/PRC-104); NIMITZ CLASS CVN; RADIO SET (AN/MRC-138); AIRBORN MOBILE DIR AIR SPT CTL (2ID), 02M
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.071 INCHES MAXIMUM
OVERALL LENGTH: 0.268 INCHES NOMINAL
OVERALL WIDTH: 0.428 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN; WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
~1: JUL83)(AN/UYQ-3A); OSPREY CLASS MHC
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2N5151
TRANSISTOR
NSN, MFG P/N
5961010695021
NSN
5961-01-069-5021
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 92059-900325 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE, WITH BASE SHORT-CIRCUITED TO EMITTER AND -80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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67SP170
TRANSISTOR
NSN, MFG P/N
5961010695021
NSN
5961-01-069-5021
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 92059-900325 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE, WITH BASE SHORT-CIRCUITED TO EMITTER AND -80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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900325-051
TRANSISTOR
NSN, MFG P/N
5961010695021
NSN
5961-01-069-5021
MFG
KAMAN AEROSPACE CORPORATION DBA KAMAN PRECISION PRODUCTS DIVISION DIV KAMAN AEROSPACE CORPORATION FUZING DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 92059-900325 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -100.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE, WITH BASE SHORT-CIRCUITED TO EMITTER AND -80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
2N3878
TRANSISTOR
NSN, MFG P/N
5961010695023
NSN
5961-01-069-5023
MFG
LOCKHEED MARTIN CORP LOCKHEED MARTIN INFORMATION SYSTEMS AUTOMATED SPARES
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 35.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TEST DATA DOCUMENT: 92059-900322 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED
Related Searches:
900322-051
TRANSISTOR
NSN, MFG P/N
5961010695023
NSN
5961-01-069-5023
MFG
KAMAN AEROSPACE CORPORATION DBA KAMAN PRECISION PRODUCTS DIVISION DIV KAMAN AEROSPACE CORPORATION FUZING DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 35.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TEST DATA DOCUMENT: 92059-900322 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED
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101040-01
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010695056
NSN
5961-01-069-5056
MFG
EIP MICROWAVE INC
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
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72B039023-1001
SEMICONDUCTOR DEVICE ASSEMBLY,DIODE
NSN, MFG P/N
5961010695512
NSN
5961-01-069-5512
72B039023-1001
SEMICONDUCTOR DEVICE ASSEMBLY,DIODE
NSN, MFG P/N
5961010695512
NSN
5961-01-069-5512
MFG
BOEING COMPANY THE DBA BOEING
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: SIX ZENER DIODES MTD BETWEEN 2 BOARDS; 2.000 IN.,1.500 IN.,0.480 IN. O/A ASSEMBLY DIM.
TEST DATA DOCUMENT: 76301-72B039023 DRAWING
Related Searches:
MPZ5-32C
SEMICONDUCTOR DEVICE ASSEMBLY,DIODE
NSN, MFG P/N
5961010695512
NSN
5961-01-069-5512
MPZ5-32C
SEMICONDUCTOR DEVICE ASSEMBLY,DIODE
NSN, MFG P/N
5961010695512
NSN
5961-01-069-5512
MFG
FREESCALE SEMICONDUCTOR INC.
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: SIX ZENER DIODES MTD BETWEEN 2 BOARDS; 2.000 IN.,1.500 IN.,0.480 IN. O/A ASSEMBLY DIM.
TEST DATA DOCUMENT: 76301-72B039023 DRAWING
Related Searches:
1N4611A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010696130
NSN
5961-01-069-6130
MFG
MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 92059-900300 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
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900300-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010696130
NSN
5961-01-069-6130
900300-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010696130
NSN
5961-01-069-6130
MFG
KAMAN AEROSPACE CORPORATION DBA KAMAN PRECISION PRODUCTS DIVISION DIV KAMAN AEROSPACE CORPORATION FUZING DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 92059-900300 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.6 MAXIMUM NOMINAL REGULATOR VOLTAGE
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C11834-0004
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010696175
NSN
5961-01-069-6175
C11834-0004
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010696175
NSN
5961-01-069-6175
MFG
ROSEMOUNT INC DBA FISHER ROSEMOUNT SERVICE AND SUPPORT
Description
COMPONENT NAME AND QUANTITY: 7 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 500.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6100
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION GOLD
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/474
OVERALL HEIGHT: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.346 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/474 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 14 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
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JAN1N6100
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010696175
NSN
5961-01-069-6175
JAN1N6100
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010696175
NSN
5961-01-069-6175
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
COMPONENT NAME AND QUANTITY: 7 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 500.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6100
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION GOLD
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/474
OVERALL HEIGHT: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.346 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/474 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 14 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
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928198-1B
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010696205
NSN
5961-01-069-6205
MFG
RAYTHEON COMPANY
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 3 TRANSISTOR
Related Searches:
S2160
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010696205
NSN
5961-01-069-6205
MFG
SOLITRON DEVICES INC.
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 3 TRANSISTOR
Related Searches:
SFC7653
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010696205
NSN
5961-01-069-6205
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 3 TRANSISTOR
Related Searches:
129213
TRANSISTOR
NSN, MFG P/N
5961010696240
NSN
5961-01-069-6240
MFG
CUBIC DEFENSE APPLICATIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.155 INCHES NOMINAL
OVERALL LENGTH: 0.800 INCHES NOMINAL
OVERALL WIDTH: 0.730 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 7.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 FLANGE AND 2 RIBBON
TEST DATA DOCUMENT: 94987-129213 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN