My Quote Request
5961-01-291-6765
20 Products
BZX70-C43
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012916765
NSN
5961-01-291-6765
MFG
CENTRAL SEMICONDUCTOR CORP DIV CENTRAL STATE INDUSTRIES INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
112-001-01
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012916161
NSN
5961-01-291-6161
MFG
ECTRON CORPORATION
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL LENGTH: 0.210 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD SINGLE TRANSISTOR
Related Searches:
717720728-009
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012916218
NSN
5961-01-291-6218
717720728-009
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012916218
NSN
5961-01-291-6218
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
Description
III END ITEM IDENTIFICATION: LANTIRN MOB SHELTER SET
MAJOR COMPONENTS: SOCKET,PLUG IN 1;SEMICONDUCTOR DEVICES 2
Related Searches:
717720723-009
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012916219
NSN
5961-01-291-6219
717720723-009
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012916219
NSN
5961-01-291-6219
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
Description
III END ITEM IDENTIFICATION: LANTIRN MOB SHELTER SET
MAJOR COMPONENTS: CIRCUIT BOARD 1;SEMICONDUCTORS 3;SOCKET,PLUG IN 1
Related Searches:
1328
TRANSISTOR
NSN, MFG P/N
5961012916408
NSN
5961-01-291-6408
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES NOMINAL
OVERALL WIDTH: 0.150 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
Related Searches:
TS-3955
TRANSISTOR
NSN, MFG P/N
5961012916408
NSN
5961-01-291-6408
MFG
MICROSEMI CORP.- MASSACHUSETTS DBA MICROSEMI LAWRENCE
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES NOMINAL
OVERALL WIDTH: 0.150 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
Related Searches:
734-070-9103
TRANSISTOR
NSN, MFG P/N
5961012916410
NSN
5961-01-291-6410
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - TORRANCE
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.090 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
C6802
TRANSISTOR
NSN, MFG P/N
5961012916410
NSN
5961-01-291-6410
MFG
CRYSTALONICS INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.090 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
SFE1121H
TRANSISTOR
NSN, MFG P/N
5961012916410
NSN
5961-01-291-6410
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.090 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
653-104-9102
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012916411
NSN
5961-01-291-6411
653-104-9102
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012916411
NSN
5961-01-291-6411
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - TORRANCE
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 500.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
UTG4042
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012916411
NSN
5961-01-291-6411
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 500.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
A400113-1
TRANSISTOR
NSN, MFG P/N
5961012916758
NSN
5961-01-291-6758
MFG
MICROPHASE SYSTEMS INC SUB OF MICROPHASE CORP
Description
TRANSISTOR
Related Searches:
NE02135C
TRANSISTOR
NSN, MFG P/N
5961012916758
NSN
5961-01-291-6758
MFG
NIPPON COMMUNICATION EQUIPMENT COMPA N
Description
TRANSISTOR
Related Searches:
25C1426
TRANSISTOR
NSN, MFG P/N
5961012916759
NSN
5961-01-291-6759
MFG
NIPPON COMMUNICATION EQUIPMENT COMPA N
Description
TRANSISTOR
Related Searches:
A400114-1
TRANSISTOR
NSN, MFG P/N
5961012916759
NSN
5961-01-291-6759
MFG
MICROPHASE SYSTEMS INC SUB OF MICROPHASE CORP
Description
TRANSISTOR
Related Searches:
6-6412-95
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012916761
NSN
5961-01-291-6761
MFG
SKYWORKS SOLUTIONS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
DLA6427-92
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012916762
NSN
5961-01-291-6762
DLA6427-92
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012916762
NSN
5961-01-291-6762
MFG
SKYWORKS SOLUTIONS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
DLA6273-07-197-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012916763
NSN
5961-01-291-6763
DLA6273-07-197-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012916763
NSN
5961-01-291-6763
MFG
SKYWORKS SOLUTIONS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BZX70-C62
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012916764
NSN
5961-01-291-6764
MFG
CENTRAL SEMICONDUCTOR CORP DIV CENTRAL STATE INDUSTRIES INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BZX70C62
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012916764
NSN
5961-01-291-6764
MFG
BRITISH SAROZAL LTD
Description
SEMICONDUCTOR DEVICE,DIODE