My Quote Request
5961-01-071-0320
20 Products
SC/A4/90403
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010710320
NSN
5961-01-071-0320
SC/A4/90403
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010710320
NSN
5961-01-071-0320
MFG
VOSPER-MANTECH LTD
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6655 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
50-464-102
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010710320
NSN
5961-01-071-0320
50-464-102
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010710320
NSN
5961-01-071-0320
MFG
ASTEC AMERICA INC .
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6655 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
DG1001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010710320
NSN
5961-01-071-0320
MFG
WAYNE KERR ELECTRONICS INC
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6655 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
HSCH-1001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010710320
NSN
5961-01-071-0320
MFG
HEWLETT PACKARD CO
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6655 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1272-0071
TRANSISTOR
NSN, MFG P/N
5961010710497
NSN
5961-01-071-0497
MFG
CUSHMAN ELECTRONICS INC
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 2SC1424
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 51984
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
2SC1424
TRANSISTOR
NSN, MFG P/N
5961010710497
NSN
5961-01-071-0497
MFG
NEC AMERICA INC
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 2SC1424
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 51984
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
580-280
TRANSISTOR
NSN, MFG P/N
5961010710497
NSN
5961-01-071-0497
MFG
AMPEX SYSTEMS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 2SC1424
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 51984
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
2ASLD40TR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010710498
NSN
5961-01-071-0498
MFG
MICROSEMI CORP RPM MICRO DIV
Description
CURRENT RATING PER CHARACTERISTIC: 1.500 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DESIGN CONTROL REFERENCE: 2ASLD40TR
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 0EC70
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 55.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 8.380 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 PIN AND 1 FERRULE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40000.0 NOMINAL REVERSE VOLTAGE, PEAK
Related Searches:
HC1026
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010710498
NSN
5961-01-071-0498
MFG
HYBRID CIRCUITS INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.500 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DESIGN CONTROL REFERENCE: 2ASLD40TR
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 0EC70
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 55.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 8.380 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 PIN AND 1 FERRULE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40000.0 NOMINAL REVERSE VOLTAGE, PEAK
Related Searches:
PD0498
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010710498
NSN
5961-01-071-0498
MFG
PD & E ELECTRONICS LLC
Description
CURRENT RATING PER CHARACTERISTIC: 1.500 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DESIGN CONTROL REFERENCE: 2ASLD40TR
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 0EC70
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 55.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 8.380 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 PIN AND 1 FERRULE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40000.0 NOMINAL REVERSE VOLTAGE, PEAK
Related Searches:
1N5274
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010710500
NSN
5961-01-071-0500
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 950.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.107 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 130.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
915F346-2
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010711161
NSN
5961-01-071-1161
915F346-2
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010711161
NSN
5961-01-071-1161
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
DESIGN CONTROL REFERENCE: 915F346-2
MAJOR COMPONENTS: DIODE 5; MTG BD 1
MANUFACTURERS CODE: 99167
THE MANUFACTURERS DATA:
Related Searches:
5086-7052
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010711460
NSN
5961-01-071-1460
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
890310
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010711764
NSN
5961-01-071-1764
890310
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010711764
NSN
5961-01-071-1764
MFG
NAI TECHNOLOGIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM ON-STATE CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-64
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.300 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM GATE VOLTAGE, DC
Related Searches:
TIC126A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010711764
NSN
5961-01-071-1764
TIC126A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010711764
NSN
5961-01-071-1764
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM ON-STATE CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-64
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.300 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM GATE VOLTAGE, DC
Related Searches:
11019652-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010711765
NSN
5961-01-071-1765
11019652-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010711765
NSN
5961-01-071-1765
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DIV LASER SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 360.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM AVERAGE GATE POWER-FORWARD
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
TEST DATA DOCUMENT: 34860-11019652 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1400.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 1400.0 MAXIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
C137PB
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010711765
NSN
5961-01-071-1765
C137PB
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010711765
NSN
5961-01-071-1765
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 360.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM AVERAGE GATE POWER-FORWARD
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
TEST DATA DOCUMENT: 34860-11019652 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1400.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 1400.0 MAXIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
0N167492
TRANSISTOR
NSN, MFG P/N
5961010712136
NSN
5961-01-071-2136
MFG
NATIONAL SECURITY AGENCY
Description
TRANSISTOR
Related Searches:
2132166-1
TRANSISTOR
NSN, MFG P/N
5961010712137
NSN
5961-01-071-2137
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER TEST SYSTEMS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 55974
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 2132166-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.016 INCHES MINIMUM AND 0.019 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
2N5154TBD
TRANSISTOR
NSN, MFG P/N
5961010712137
NSN
5961-01-071-2137
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: GOLD PLATED LEADS AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 55974
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 2132166-1
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.016 INCHES MINIMUM AND 0.019 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC