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5961-01-121-9648
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SDH3770
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011219648
NSN
5961-01-121-9648
SDH3770
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011219648
NSN
5961-01-121-9648
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
III END ITEM IDENTIFICATION: GMSRSMODKIT12
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81205-BACS8A DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN ALL TRANSISTOR
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SCA15341
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011219648
NSN
5961-01-121-9648
SCA15341
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011219648
NSN
5961-01-121-9648
MFG
SEMICOA DBA SEMICOA SEMI CONDUCTORS
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
III END ITEM IDENTIFICATION: GMSRSMODKIT12
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81205-BACS8A DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN ALL TRANSISTOR
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SD2211H-5
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011219648
NSN
5961-01-121-9648
SD2211H-5
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011219648
NSN
5961-01-121-9648
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
III END ITEM IDENTIFICATION: GMSRSMODKIT12
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81205-BACS8A DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN ALL TRANSISTOR
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3-22701
TRANSISTOR
NSN, MFG P/N
5961011220431
NSN
5961-01-122-0431
MFG
VU-DATA CORP
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-106
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.222 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.105 INCHES MINIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 41.5 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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10554840
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011220432
NSN
5961-01-122-0432
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
SEMICONDUCTOR DEVICE,DIODE
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1N1199
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011220432
NSN
5961-01-122-0432
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
SEMICONDUCTOR DEVICE,DIODE
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523143
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011220818
NSN
5961-01-122-0818
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Description
III END ITEM IDENTIFICATION: AN/APX-76B
MATERIAL: COPPER ALLOY 172
MATERIAL DOCUMENT AND CLASSIFICATION: QQ-C-533 FED SPEC SINGLE MATERIAL RESPONSE
MOUNTING FACILITY TYPE AND QUANTITY: 1 UNTHREADED HOLE SINGLE MOUNTING FACILITY
OVERALL HEIGHT: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.720 INCHES NOMINAL
OVERALL WIDTH: 0.360 INCHES NOMINAL
STYLE DESIGNATOR: 12C IRREGULAR
UNTHREADED MOUNTING HOLE DIAMETER: 0.140 INCHES NOMINAL SINGLE MOUNTING FACILITY
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041-247
TRANSISTOR
NSN, MFG P/N
5961011220875
NSN
5961-01-122-0875
MFG
AMPEX SYSTEMS CORP
Description
TRANSISTOR
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1R-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011220878
NSN
5961-01-122-0878
MFG
EDAL INDUSTRIES INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
581-050
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011220879
NSN
5961-01-122-0879
MFG
AMPEX SYSTEMS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
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103-440-001
TRANSISTOR
NSN, MFG P/N
5961011221403
NSN
5961-01-122-1403
MFG
L-3 COMMUNICATIONS CORPORATION DBA GLOBAL NETWORK SOLUTIONS DIV AYDIN COMMUNICATIONS DIVISION
Description
TRANSISTOR
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932366-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011221660
NSN
5961-01-122-1660
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
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PD2910
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011221660
NSN
5961-01-122-1660
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
SEMICONDUCTOR DEVICE,DIODE
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SA7689
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011221660
NSN
5961-01-122-1660
MFG
SEMTECH CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
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40020194-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011221984
NSN
5961-01-122-1984
40020194-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011221984
NSN
5961-01-122-1984
MFG
DNE TECHNOLOGIES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 21.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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A197MX9
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011221985
NSN
5961-01-122-1985
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
SEMICONDUCTOR DEVICE,DIODE
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816B520P5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011222148
NSN
5961-01-122-2148
MFG
GENICOM CORP
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: CERAMIC OR GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.390 INCHES MAXIMUM
OVERALL LENGTH: 0.750 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.060 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
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19A121759P1
TRANSISTOR
NSN, MFG P/N
5961011222353
NSN
5961-01-122-2353
MFG
GENERAL ELECTRIC CO MOBILE COMMUNICATIONS BUSINESS DIV
Description
TRANSISTOR
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28452-197H
TRANSISTOR
NSN, MFG P/N
5961011222356
NSN
5961-01-122-2356
MFG
AEROFLEX WICHITA INC.
Description
TRANSISTOR
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BSX20
TRANSISTOR
NSN, MFG P/N
5961011222356
NSN
5961-01-122-2356
MFG
VISHAY
Description
TRANSISTOR