My Quote Request
5961-01-130-8551
20 Products
STB852
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011308551
NSN
5961-01-130-8551
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DATA LINK 76301
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-353-9052 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REVERSE VOLTAGE, AVERAGE
Related Searches:
GC40542
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011307579
NSN
5961-01-130-7579
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
CAPACITANCE RATING IN PICOFARADS: 0.65 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 100.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.065 INCHES MAXIMUM
OVERALL LENGTH: 0.621 INCHES NOMINAL
OVERALL WIDTH: 0.124 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 RIBBON AND 1 CASE
TEST DATA DOCUMENT: 13499-922-6510 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 255.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
M5X1329
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011307579
NSN
5961-01-130-7579
MFG
AEROFLEX / METELICS INC.
Description
CAPACITANCE RATING IN PICOFARADS: 0.65 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 100.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.065 INCHES MAXIMUM
OVERALL LENGTH: 0.621 INCHES NOMINAL
OVERALL WIDTH: 0.124 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 RIBBON AND 1 CASE
TEST DATA DOCUMENT: 13499-922-6510 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 255.0 MAXIMUM REVERSE VOLTAGE, PEAK
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MA4P818
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011307579
NSN
5961-01-130-7579
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CAPACITANCE RATING IN PICOFARADS: 0.65 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 100.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.065 INCHES MAXIMUM
OVERALL LENGTH: 0.621 INCHES NOMINAL
OVERALL WIDTH: 0.124 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 RIBBON AND 1 CASE
TEST DATA DOCUMENT: 13499-922-6510 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 255.0 MAXIMUM REVERSE VOLTAGE, PEAK
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30B5286 PIECE 3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011308295
NSN
5961-01-130-8295
30B5286 PIECE 3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011308295
NSN
5961-01-130-8295
MFG
POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
352-8525-012
TRANSISTOR
NSN, MFG P/N
5961011308544
NSN
5961-01-130-8544
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DATA LINK 76301
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-352-8525 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 27.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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DMS 91032B
TRANSISTOR
NSN, MFG P/N
5961011308544
NSN
5961-01-130-8544
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DATA LINK 76301
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-352-8525 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 27.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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SFE916H
TRANSISTOR
NSN, MFG P/N
5961011308544
NSN
5961-01-130-8544
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DATA LINK 76301
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-352-8525 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 27.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
352-8520-022
TRANSISTOR
NSN, MFG P/N
5961011308545
NSN
5961-01-130-8545
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DATA LINK 76301
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.035 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.8 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 PIN
TEST DATA DOCUMENT: 13499-352-8520 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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SRF3012H
TRANSISTOR
NSN, MFG P/N
5961011308545
NSN
5961-01-130-8545
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DATA LINK 76301
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.035 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.8 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 PIN
TEST DATA DOCUMENT: 13499-352-8520 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
ST-5063
TRANSISTOR
NSN, MFG P/N
5961011308546
NSN
5961-01-130-8546
MFG
SEMICONDUCTOR TECHNOLOGY INC DBA S T I
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 5.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: F+16 A+C
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 20.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 500.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
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151-0647-00
TRANSISTOR
NSN, MFG P/N
5961011308548
NSN
5961-01-130-8548
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: IP-1366 80009
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.575 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
OVERALL WIDTH: 0.395 INCHES MINIMUM AND 0.410 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -140.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -140.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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DMS 88131B
TRANSISTOR
NSN, MFG P/N
5961011308548
NSN
5961-01-130-8548
MFG
DLA LAND AND MARITIME
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: IP-1366 80009
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.575 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
OVERALL WIDTH: 0.395 INCHES MINIMUM AND 0.410 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -140.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -140.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
SJE795
TRANSISTOR
NSN, MFG P/N
5961011308548
NSN
5961-01-130-8548
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: IP-1366 80009
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.575 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
OVERALL WIDTH: 0.395 INCHES MINIMUM AND 0.410 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -140.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -140.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
353-9045-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011308549
NSN
5961-01-130-8549
353-9045-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011308549
NSN
5961-01-130-8549
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES NOMINAL
OVERALL LENGTH: 0.170 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
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DSR4092
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011308549
NSN
5961-01-130-8549
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES NOMINAL
OVERALL LENGTH: 0.170 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
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140052-022
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011308550
NSN
5961-01-130-8550
140052-022
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011308550
NSN
5961-01-130-8550
MFG
MICRONETICS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DATA LINK 76301
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.098 INCHES NOMINAL
OVERALL LENGTH: 0.050 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.450 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-922-6510 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 255.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
922-6510-022
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011308550
NSN
5961-01-130-8550
922-6510-022
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011308550
NSN
5961-01-130-8550
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DATA LINK 76301
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.098 INCHES NOMINAL
OVERALL LENGTH: 0.050 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.450 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-922-6510 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 255.0 MAXIMUM REVERSE VOLTAGE, PEAK
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GC40543
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011308550
NSN
5961-01-130-8550
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DATA LINK 76301
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.098 INCHES NOMINAL
OVERALL LENGTH: 0.050 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.450 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-922-6510 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 255.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
353-9052-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011308551
NSN
5961-01-130-8551
353-9052-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011308551
NSN
5961-01-130-8551
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: DATA LINK 76301
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-353-9052 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REVERSE VOLTAGE, AVERAGE