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5961-01-136-2160

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0N516134-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011362160

NSN

5961-01-136-2160

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0N516134-5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011362160

NSN

5961-01-136-2160

MFG

NATIONAL SECURITY AGENCY

71576142

TRANSISTOR

NSN, MFG P/N

5961011361982

NSN

5961-01-136-1982

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71576142

TRANSISTOR

NSN, MFG P/N

5961011361982

NSN

5961-01-136-1982

MFG

ENGINEERED MAGNETICS INC DBA AAP DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 06509-715761 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 325.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 300.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

715761U2

TRANSISTOR

NSN, MFG P/N

5961011361982

NSN

5961-01-136-1982

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715761U2

TRANSISTOR

NSN, MFG P/N

5961011361982

NSN

5961-01-136-1982

MFG

TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 06509-715761 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 325.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 300.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

151-0630-00

TRANSISTOR

NSN, MFG P/N

5961011361983

NSN

5961-01-136-1983

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151-0630-00

TRANSISTOR

NSN, MFG P/N

5961011361983

NSN

5961-01-136-1983

MFG

TEKTRONIX INC. DBA TEKTRONIX

NE02135

TRANSISTOR

NSN, MFG P/N

5961011361983

NSN

5961-01-136-1983

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NE02135

TRANSISTOR

NSN, MFG P/N

5961011361983

NSN

5961-01-136-1983

MFG

CALIFORNIA EASTERN LABS

151-0689-00

TRANSISTOR

NSN, MFG P/N

5961011361984

NSN

5961-01-136-1984

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151-0689-00

TRANSISTOR

NSN, MFG P/N

5961011361984

NSN

5961-01-136-1984

MFG

TEKTRONIX INC. DBA TEKTRONIX

NE57835

TRANSISTOR

NSN, MFG P/N

5961011361984

NSN

5961-01-136-1984

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NE57835

TRANSISTOR

NSN, MFG P/N

5961011361984

NSN

5961-01-136-1984

MFG

NIPPON ELECTRIC COMPANY LTD

1992A25H01

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961011361985

NSN

5961-01-136-1985

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1992A25H01

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961011361985

NSN

5961-01-136-1985

MFG

WESTINGHOUSE ELECTRIC CORP GENERAL CONTROL DIV

Description

INCLOSURE MATERIAL: METAL AND CERAMIC
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 2.870 INCHES NOMINAL
OVERALL LENGTH: 1.050 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG

0N516139

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011362147

NSN

5961-01-136-2147

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0N516139

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011362147

NSN

5961-01-136-2147

MFG

NATIONAL SECURITY AGENCY

0N516135

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011362148

NSN

5961-01-136-2148

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0N516135

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011362148

NSN

5961-01-136-2148

MFG

NATIONAL SECURITY AGENCY

0N516125

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011362150

NSN

5961-01-136-2150

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0N516125

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011362150

NSN

5961-01-136-2150

MFG

NATIONAL SECURITY AGENCY

0N516126

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011362151

NSN

5961-01-136-2151

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0N516126

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011362151

NSN

5961-01-136-2151

MFG

NATIONAL SECURITY AGENCY

0N516127

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011362152

NSN

5961-01-136-2152

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0N516127

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011362152

NSN

5961-01-136-2152

MFG

NATIONAL SECURITY AGENCY

0N516128-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011362153

NSN

5961-01-136-2153

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0N516128-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011362153

NSN

5961-01-136-2153

MFG

NATIONAL SECURITY AGENCY

0N516129

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011362154

NSN

5961-01-136-2154

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0N516129

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011362154

NSN

5961-01-136-2154

MFG

NATIONAL SECURITY AGENCY

0N516130

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011362155

NSN

5961-01-136-2155

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0N516130

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011362155

NSN

5961-01-136-2155

MFG

NATIONAL SECURITY AGENCY

0N516132-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011362156

NSN

5961-01-136-2156

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0N516132-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011362156

NSN

5961-01-136-2156

MFG

NATIONAL SECURITY AGENCY

0N516132-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011362157

NSN

5961-01-136-2157

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0N516132-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011362157

NSN

5961-01-136-2157

MFG

NATIONAL SECURITY AGENCY

0N516133

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011362158

NSN

5961-01-136-2158

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0N516133

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011362158

NSN

5961-01-136-2158

MFG

NATIONAL SECURITY AGENCY

0N516134-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011362159

NSN

5961-01-136-2159

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0N516134-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011362159

NSN

5961-01-136-2159

MFG

NATIONAL SECURITY AGENCY