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5961-01-136-6314

20 Products

GYE-1315

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011366314

NSN

5961-01-136-6314

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GYE-1315

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011366314

NSN

5961-01-136-6314

MFG

FORD MOTOR CRAFT

48R134978

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011366316

NSN

5961-01-136-6316

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48R134978

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011366316

NSN

5961-01-136-6316

MFG

FREESCALE SEMICONDUCTOR INC.

48-2054A00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011366317

NSN

5961-01-136-6317

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48-2054A00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011366317

NSN

5961-01-136-6317

MFG

MOTOROLA COMMUNICATIONS GROUP PARTS DEPT DIV OF MOTOROLA INC

48R02054A00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011366317

NSN

5961-01-136-6317

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48R02054A00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011366317

NSN

5961-01-136-6317

MFG

FREESCALE SEMICONDUCTOR INC.

B4009681

TRANSISTOR

NSN, MFG P/N

5961011366575

NSN

5961-01-136-6575

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B4009681

TRANSISTOR

NSN, MFG P/N

5961011366575

NSN

5961-01-136-6575

MFG

DEPARTMENT OF THE ARMY HQ UNITED STATES ARMY COMMUNICATIONS RESEARCH AND DEVELOPMENT COMMAND

FXSE110A(400V)

TRANSISTOR

NSN, MFG P/N

5961011366575

NSN

5961-01-136-6575

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FXSE110A(400V)

TRANSISTOR

NSN, MFG P/N

5961011366575

NSN

5961-01-136-6575

MFG

SOLITRON DEVICES INC.

B4009433

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011366576

NSN

5961-01-136-6576

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B4009433

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011366576

NSN

5961-01-136-6576

MFG

DEPARTMENT OF THE ARMY HQ UNITED STATES ARMY COMMUNICATIONS RESEARCH AND DEVELOPMENT COMMAND

B4009435

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011366577

NSN

5961-01-136-6577

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B4009435

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011366577

NSN

5961-01-136-6577

MFG

DEPARTMENT OF THE ARMY HQ UNITED STATES ARMY COMMUNICATIONS RESEARCH AND DEVELOPMENT COMMAND

SPD9435

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011366577

NSN

5961-01-136-6577

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SPD9435

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011366577

NSN

5961-01-136-6577

MFG

SOLID STATE DEVICES INC.

JANTXV1N4981

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011366578

NSN

5961-01-136-6578

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JANTXV1N4981

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011366578

NSN

5961-01-136-6578

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 52.50 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4981
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 91.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

803-2

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011366612

NSN

5961-01-136-6612

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803-2

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011366612

NSN

5961-01-136-6612

MFG

MICRO USPD INC

Description

(NON-CORE DATA) TEST DATA DOCUMENT: 92059-900556 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 WORKING PEAK REVERSE VOLTAGE AND 100.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
III END ITEM IDENTIFICATION: 7025-01-625-3080
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.560 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES MAXIMUM
OVERALL WIDTH: 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TURRET

900556-002

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011366612

NSN

5961-01-136-6612

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900556-002

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961011366612

NSN

5961-01-136-6612

MFG

KAMAN AEROSPACE CORPORATION DBA KAMAN PRECISION PRODUCTS DIVISION DIV KAMAN AEROSPACE CORPORATION FUZING DIVISION

Description

(NON-CORE DATA) TEST DATA DOCUMENT: 92059-900556 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 WORKING PEAK REVERSE VOLTAGE AND 100.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
III END ITEM IDENTIFICATION: 7025-01-625-3080
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.560 INCHES NOMINAL
OVERALL LENGTH: 0.750 INCHES MAXIMUM
OVERALL WIDTH: 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TURRET

MRF321

TRANSISTOR

NSN, MFG P/N

5961011366856

NSN

5961-01-136-6856

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MRF321

TRANSISTOR

NSN, MFG P/N

5961011366856

NSN

5961-01-136-6856

MFG

VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV

B25-28

TRANSISTOR

NSN, MFG P/N

5961011366857

NSN

5961-01-136-6857

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B25-28

TRANSISTOR

NSN, MFG P/N

5961011366857

NSN

5961-01-136-6857

MFG

VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV

60994

TRANSISTOR

NSN, MFG P/N

5961011366859

NSN

5961-01-136-6859

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60994

TRANSISTOR

NSN, MFG P/N

5961011366859

NSN

5961-01-136-6859

MFG

INTERSIL CORPORATION

2209

TRANSISTOR

NSN, MFG P/N

5961011367013

NSN

5961-01-136-7013

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2209

TRANSISTOR

NSN, MFG P/N

5961011367013

NSN

5961-01-136-7013

MFG

EXTEL CORP

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 50.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 900.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 12.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

GES5307

TRANSISTOR

NSN, MFG P/N

5961011367013

NSN

5961-01-136-7013

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GES5307

TRANSISTOR

NSN, MFG P/N

5961011367013

NSN

5961-01-136-7013

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 50.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 900.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 12.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

10157229

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011367014

NSN

5961-01-136-7014

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10157229

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011367014

NSN

5961-01-136-7014

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 18876
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 10157229
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REVERSE VOLTAGE, DC

FJT1134

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011367014

NSN

5961-01-136-7014

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FJT1134

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011367014

NSN

5961-01-136-7014

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 18876
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 10157229
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REVERSE VOLTAGE, DC

12280117

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961011367366

NSN

5961-01-136-7366

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12280117

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961011367366

NSN

5961-01-136-7366

MFG

U S ARMY TANK AUTOMOTIVE COMMAND AMSTA-IM-MM

Description

DESIGN CONTROL REFERENCE: 12280117
INSIDE DIAMETER: 0.880 INCHES NOMINAL
MANUFACTURERS CODE: 19207
MATERIAL: PLASTIC POLYAMIDE
MOUNTING FACILITY TYPE AND QUANTITY: 2 UNTHREADED HOLE ALL MOUNTING FACILITIES
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.700 INCHES NOMINAL
OVERALL WIDTH: 1.170 INCHES NOMINAL
STYLE DESIGNATOR: 63B SPRING CLIP TYPE
THE MANUFACTURERS DATA:
UNTHREADED MOUNTING HOLE DIAMETER: 0.165 INCHES NOMINAL FIRST MOUNTING FACILITY 0.265 INCHES NOMINAL SECOND MOUNTING FACILITY