My Quote Request
5961-01-137-5672
20 Products
72069629-029
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011375672
NSN
5961-01-137-5672
72069629-029
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011375672
NSN
5961-01-137-5672
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
400 00001 01
TRANSISTOR
NSN, MFG P/N
5961011373862
NSN
5961-01-137-3862
MFG
RYCOM INSTRUMENTS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.105 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 310.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
NP4180
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011373865
NSN
5961-01-137-3865
MFG
TELAIR INTERNATIONAL INCORPORATED DBA NORDISK AVIATION PRODUCTS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1712474-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011373867
NSN
5961-01-137-3867
MFG
L-3 COMMUNICATIONS CORPORATION DBA COMMUNICATION SYSTEMS - EAST DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
101000586
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011373869
NSN
5961-01-137-3869
MFG
DATA GENERAL CORP M/S 9S17
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
MBR6045
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011373869
NSN
5961-01-137-3869
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
38800022
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011373870
NSN
5961-01-137-3870
MFG
DELTYME CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
C384E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011373870
NSN
5961-01-137-3870
MFG
POWEREX INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
38710116
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011373871
NSN
5961-01-137-3871
MFG
DELTYME CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
JAN1N6041A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011374020
NSN
5961-01-137-4020
JAN1N6041A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011374020
NSN
5961-01-137-4020
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N6041A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/507 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.6 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
63C515434G1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011374677
NSN
5961-01-137-4677
63C515434G1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011374677
NSN
5961-01-137-4677
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN SIMULATION TRAINING & SUPPORT
Description
DESIGN CONTROL REFERENCE: 63C515434G1
MAJOR COMPONENTS: SEMICONDUCTOR DEVICE,DIODE 16; TERMINALS 32; TERMINAL BOARD 1
MANUFACTURERS CODE: 16331
THE MANUFACTURERS DATA:
Related Searches:
16E1039-105
BRACKET,SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011374867
NSN
5961-01-137-4867
16E1039-105
BRACKET,SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011374867
NSN
5961-01-137-4867
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV LOCKHEED MARTIN AERONAUTICS COMPANY
Description
BRACKET,SEMICONDUCTOR DEVICE SET
Related Searches:
118SXH101
TRANSISTOR
NSN, MFG P/N
5961011375341
NSN
5961-01-137-5341
MFG
SOLITRON DEVICES INC.
Description
TRANSISTOR
Related Searches:
538R556 H03
TRANSISTOR
NSN, MFG P/N
5961011375341
NSN
5961-01-137-5341
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
TRANSISTOR
Related Searches:
PP7931
TRANSISTOR
NSN, MFG P/N
5961011375341
NSN
5961-01-137-5341
MFG
MICROSEMI PPC INC
Description
TRANSISTOR
Related Searches:
SJ7655
TRANSISTOR
NSN, MFG P/N
5961011375341
NSN
5961-01-137-5341
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
353-3180-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011375342
NSN
5961-01-137-5342
353-3180-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011375342
NSN
5961-01-137-5342
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 5.60 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 17.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N969B-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
JANTX1N969B-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011375342
NSN
5961-01-137-5342
JANTX1N969B-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011375342
NSN
5961-01-137-5342
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.60 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 17.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N969B-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
TX1N9698
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011375342
NSN
5961-01-137-5342
MFG
THE DEWEY ELECTRONICS CORPORATION DBA PITOMETER LOG DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 5.60 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 17.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N969B-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
655-678S
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011375672
NSN
5961-01-137-5672
655-678S
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011375672
NSN
5961-01-137-5672
MFG
MICRO USPD INC
Description
RECTIFIER,SEMICONDUCTOR DEVICE