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5961-01-154-2513

20 Products

UZ1441UZ118-

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011542513

NSN

5961-01-154-2513

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UZ1441UZ118-

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011542513

NSN

5961-01-154-2513

MFG

MICRO USPD INC

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4492
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: NIMITZ CLASS CVN; OLIVER PERRY CLASS FFG; FORRESTAL CLASS CV; KIDD CLASS DDG; TACTICAL DATA SYSTEM, AN/UYA-4 (V); TOCONDEROGA CLASS CG (47); VIRGINIA CLASS CGN (41); YELLOWSTONE CLASS AD-41; SPRUANCE CLASS DD (963); WASP CLASS LHD
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 130.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

1N3816B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011542513

NSN

5961-01-154-2513

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1N3816B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011542513

NSN

5961-01-154-2513

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4492
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: NIMITZ CLASS CVN; OLIVER PERRY CLASS FFG; FORRESTAL CLASS CV; KIDD CLASS DDG; TACTICAL DATA SYSTEM, AN/UYA-4 (V); TOCONDEROGA CLASS CG (47); VIRGINIA CLASS CGN (41); YELLOWSTONE CLASS AD-41; SPRUANCE CLASS DD (963); WASP CLASS LHD
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 130.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

JANTX1N4492

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011542513

NSN

5961-01-154-2513

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JANTX1N4492

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011542513

NSN

5961-01-154-2513

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4492
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: NIMITZ CLASS CVN; OLIVER PERRY CLASS FFG; FORRESTAL CLASS CV; KIDD CLASS DDG; TACTICAL DATA SYSTEM, AN/UYA-4 (V); TOCONDEROGA CLASS CG (47); VIRGINIA CLASS CGN (41); YELLOWSTONE CLASS AD-41; SPRUANCE CLASS DD (963); WASP CLASS LHD
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 130.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

RELEASE5361

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011542513

NSN

5961-01-154-2513

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RELEASE5361

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011542513

NSN

5961-01-154-2513

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 11.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4492
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III END ITEM IDENTIFICATION: NIMITZ CLASS CVN; OLIVER PERRY CLASS FFG; FORRESTAL CLASS CV; KIDD CLASS DDG; TACTICAL DATA SYSTEM, AN/UYA-4 (V); TOCONDEROGA CLASS CG (47); VIRGINIA CLASS CGN (41); YELLOWSTONE CLASS AD-41; SPRUANCE CLASS DD (963); WASP CLASS LHD
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.800 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 130.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

6999ED883

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011542516

NSN

5961-01-154-2516

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6999ED883

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011542516

NSN

5961-01-154-2516

MFG

DRS POWER & CONTROL TECHNOLOGIES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 4.131 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 INSULATED WIRE LEAD W/TERMINAL LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 27192-6999ED883 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MINIMUM REVERSE VOLTAGE, DC AND 1200.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 1400.0 MINIMUM NONREPETITIVE PEAK REVERSE VOLTAGE

73-4499

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011542516

NSN

5961-01-154-2516

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73-4499

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011542516

NSN

5961-01-154-2516

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 4.131 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 INSULATED WIRE LEAD W/TERMINAL LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 27192-6999ED883 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MINIMUM REVERSE VOLTAGE, DC AND 1200.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 1400.0 MINIMUM NONREPETITIVE PEAK REVERSE VOLTAGE

R7D01203XX

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011542516

NSN

5961-01-154-2516

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R7D01203XX

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011542516

NSN

5961-01-154-2516

MFG

WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 4.131 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 INSULATED WIRE LEAD W/TERMINAL LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 27192-6999ED883 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MINIMUM REVERSE VOLTAGE, DC AND 1200.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 1400.0 MINIMUM NONREPETITIVE PEAK REVERSE VOLTAGE

R7D11203XXUB00AS14

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011542516

NSN

5961-01-154-2516

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R7D11203XXUB00AS14

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011542516

NSN

5961-01-154-2516

MFG

POWEREX INC

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 4.131 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 INSULATED WIRE LEAD W/TERMINAL LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 27192-6999ED883 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MINIMUM REVERSE VOLTAGE, DC AND 1200.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 1400.0 MINIMUM NONREPETITIVE PEAK REVERSE VOLTAGE

581R188H02

TRANSISTOR

NSN, MFG P/N

5961011542667

NSN

5961-01-154-2667

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581R188H02

TRANSISTOR

NSN, MFG P/N

5961011542667

NSN

5961-01-154-2667

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM GATE 1 CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AN/AWG-10A
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 97942
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 581R188H02
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.662 INCHES NOMINAL
OVERALL LENGTH: 1.550 INCHES NOMINAL
OVERALL WIDTH: 1.050 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 4.5 MAXIMUM EMITTER TO BASE VOLTAGE, DC

PP7824

TRANSISTOR

NSN, MFG P/N

5961011542667

NSN

5961-01-154-2667

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PP7824

TRANSISTOR

NSN, MFG P/N

5961011542667

NSN

5961-01-154-2667

MFG

MICROSEMI PPC INC

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM GATE 1 CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AN/AWG-10A
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 97942
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 581R188H02
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.662 INCHES NOMINAL
OVERALL LENGTH: 1.550 INCHES NOMINAL
OVERALL WIDTH: 1.050 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 4.5 MAXIMUM EMITTER TO BASE VOLTAGE, DC

218-37805-101

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011542668

NSN

5961-01-154-2668

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218-37805-101

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011542668

NSN

5961-01-154-2668

MFG

VOUGHT AIRCRAFT INDUSTRIES INC.

Description

DESIGN CONTROL REFERENCE: 218-37805-101
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 80378
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
TERMINAL CIRCLE DIAMETER: 0.022 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

553-1050-04

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961011543000

NSN

5961-01-154-3000

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553-1050-04

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961011543000

NSN

5961-01-154-3000

MFG

L-3 COMMUNICATIONS AVIONICS SYSTEMS INC

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
DESIGN CONTROL REFERENCE: MT1121C
MANUFACTURERS CODE: 32953
SPECIAL FEATURES: POWERTECH P/N MT1121
THE MANUFACTURERS DATA:

MT1121C

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961011543000

NSN

5961-01-154-3000

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MT1121C

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961011543000

NSN

5961-01-154-3000

MFG

POWER TECH INC

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
DESIGN CONTROL REFERENCE: MT1121C
MANUFACTURERS CODE: 32953
SPECIAL FEATURES: POWERTECH P/N MT1121
THE MANUFACTURERS DATA:

2N4289

TRANSISTOR

NSN, MFG P/N

5961011543190

NSN

5961-01-154-3190

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2N4289

TRANSISTOR

NSN, MFG P/N

5961011543190

NSN

5961-01-154-3190

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.090 INCHES NOMINAL
OVERALL LENGTH: 0.175 INCHES NOMINAL
OVERALL WIDTH: 0.090 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5363 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

KVF15A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011544245

NSN

5961-01-154-4245

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KVF15A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011544245

NSN

5961-01-154-4245

MFG

ELECTRONIC DEVICES INC DBA E D I

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.310 INCHES MAXIMUM
OVERALL LENGTH: 2.500 INCHES NOMINAL
OVERALL WIDTH: 0.510 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 2.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15000.0 MAXIMUM REVERSE VOLTAGE, PEAK

JAN2N6299

TRANSISTOR

NSN, MFG P/N

5961011544403

NSN

5961-01-154-4403

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JAN2N6299

TRANSISTOR

NSN, MFG P/N

5961011544403

NSN

5961-01-154-4403

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 120.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N6299
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/540
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 32.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/540 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

0-105816-2

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961011544539

NSN

5961-01-154-4539

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0-105816-2

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961011544539

NSN

5961-01-154-4539

MFG

ELWELL-PARKER ELECTRIC CO

25278

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961011544539

NSN

5961-01-154-4539

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25278

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961011544539

NSN

5961-01-154-4539

MFG

LANDOLL CORPORATION DBA LANDOLL CORPORATION DREXEL DIVISION DIV DREXEL

259A8783G5

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961011544539

NSN

5961-01-154-4539

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259A8783G5

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961011544539

NSN

5961-01-154-4539

MFG

GENERAL ELECTRIC CO GE DRIVE SYSTEMS GOVERNMENT BUSINESS OPN

5169138-09

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961011544539

NSN

5961-01-154-4539

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5169138-09

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961011544539

NSN

5961-01-154-4539

MFG

NACCO MATERIALS HANDLING GROUP INC DBA YALE MATERIALS HANDLING DIV NACCO MATERIALS HANDLING GROUP INC.