My Quote Request
5961-01-161-3398
20 Products
HSCH3486
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011613398
NSN
5961-01-161-3398
MFG
HEWLETT-PACKARD LTD
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: RADAR SYSTEM AN/FPS-117
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
HSCH-3486
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011613398
NSN
5961-01-161-3398
MFG
ADVANCED SEMICONDUCTOR INC. DBA A S I
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: RADAR SYSTEM AN/FPS-117
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
84-00004-001
TRANSISTOR
NSN, MFG P/N
5961011614664
NSN
5961-01-161-4664
MFG
GENERAL DYNAMICS OTS AEROSPACE INC. DBA GENERAL DYNAMICS OTS SEATTLE DIV SEATTLE OPERATIONS
Description
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.620 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
2N6059
TRANSISTOR
NSN, MFG P/N
5961011614665
NSN
5961-01-161-4665
MFG
FREESCALE SEMICONDUCTOR INC.
Description
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.550 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 INSULATED WIRE LEAD
Related Searches:
84-00002-001
TRANSISTOR
NSN, MFG P/N
5961011614665
NSN
5961-01-161-4665
MFG
GENERAL DYNAMICS OTS AEROSPACE INC. DBA GENERAL DYNAMICS OTS SEATTLE DIV SEATTLE OPERATIONS
Description
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.550 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 INSULATED WIRE LEAD
Related Searches:
1A7894-1
TRANSISTOR
NSN, MFG P/N
5961011614666
NSN
5961-01-161-4666
MFG
GE AVIATIONS SYSTEMS LLC DBA GE AVIATION DIV ELECTRICAL POWER-POMPANO
Description
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 97953
MFR SOURCE CONTROLLING REFERENCE: 1A7894-1
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.039 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
94-0056
TRANSISTOR
NSN, MFG P/N
5961011614666
NSN
5961-01-161-4666
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 97953
MFR SOURCE CONTROLLING REFERENCE: 1A7894-1
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.039 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
732778
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011614668
NSN
5961-01-161-4668
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
DESIGN CONTROL REFERENCE: 732778A
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 99167
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
732778A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011614668
NSN
5961-01-161-4668
MFG
HAMILTON SUNDSTRAND CORP HAMILTON SUNDSTRAND AEROSPACE
Description
DESIGN CONTROL REFERENCE: 732778A
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 99167
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
300-0115
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011614669
NSN
5961-01-161-4669
MFG
DDC PERTEC PERIPHERALS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
NDP115
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011614669
NSN
5961-01-161-4669
MFG
MICRO USPD INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BSX46-16
TRANSISTOR
NSN, MFG P/N
5961011614793
NSN
5961-01-161-4793
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: 15SEP00 ITEM REVIEWED UNDER GIRDER PROJECT. FG NON-CONCUR CANCELLATION ACTION
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.359 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
UTX4125
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011614794
NSN
5961-01-161-4794
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.345 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.040 INCHES NOMINAL
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
PW80
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011614973
NSN
5961-01-161-4973
MFG
ELECTRONIC DEVICES INC DBA E D I
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 REVERSE VOLTAGE, PEAK
OVERALL HEIGHT: 0.438 INCHES MAXIMUM
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
Related Searches:
12309247
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011615440
NSN
5961-01-161-5440
12309247
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011615440
NSN
5961-01-161-5440
MFG
U S ARMY TANK AUTOMOTIVE COMMAND AMSTA-IM-MM
Description
MAJOR COMPONENTS: SEMICONDUCTORS 4; TERMINAL BOARD 1; CLAMP 1; MULTIPLE WIRE CONNECTOR
Related Searches:
325714-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011615484
NSN
5961-01-161-5484
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 97.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5525B
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
JANTX1N5525B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011615484
NSN
5961-01-161-5484
JANTX1N5525B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011615484
NSN
5961-01-161-5484
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 97.00 MILLIAMPERES MAXIMUM PEAK REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5525B
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
VK248X
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011617573
NSN
5961-01-161-7573
VK248X
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011617573
NSN
5961-01-161-7573
MFG
L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: PLASTIC EPOXY
OPERATING TEMP RANGE: -50.0 TO 135.0 DEG CELSIUS
OVERALL LENGTH: 0.770 INCHES NOMINAL
OVERALL WIDTH: 0.770 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 UNINSULATED WIRE LEAD
Related Searches:
12303225
TRANSISTOR
NSN, MFG P/N
5961011618866
NSN
5961-01-161-8866
MFG
U S ARMY TANK AUTOMOTIVE COMMAND AMSTA-IM-MM
Description
MANUFACTURERS CODE: 19207
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 12303225
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.720 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.560 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 15.0 MINIMUM DRAIN TO SUBSTRATE VOLTAGE AND 15.0 MINIMUM SOURCE TO SUBSTRATE VOLTAGE
Related Searches:
SD210DE
TRANSISTOR
NSN, MFG P/N
5961011618866
NSN
5961-01-161-8866
MFG
PHILIPS SEMICONDUCTORS INC
Description
MANUFACTURERS CODE: 19207
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 12303225
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.720 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.560 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 15.0 MINIMUM DRAIN TO SUBSTRATE VOLTAGE AND 15.0 MINIMUM SOURCE TO SUBSTRATE VOLTAGE