My Quote Request
5961-01-181-1199
20 Products
SCHS5000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011811199
NSN
5961-01-181-1199
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 2.500 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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JNTX469-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011807238
NSN
5961-01-180-7238
MFG
MICRO USPD INC
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.750 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL LENGTH: 0.200 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 140.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
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S6A20FRX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011807238
NSN
5961-01-180-7238
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.750 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL LENGTH: 0.200 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 140.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
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SA8003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011807238
NSN
5961-01-180-7238
MFG
SEMTECH CORPORATION
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.750 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL LENGTH: 0.200 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 140.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
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950037-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011807239
NSN
5961-01-180-7239
950037-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011807239
NSN
5961-01-180-7239
MFG
DATAMETRICS CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 12.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 150.00 AMPERES MAXIMUM FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE AND 5.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 1.000 INCHES MAXIMUM
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.594 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 300.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 210.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
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SA8004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011807239
NSN
5961-01-180-7239
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
CURRENT RATING PER CHARACTERISTIC: 12.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 150.00 AMPERES MAXIMUM FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE AND 5.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 1.000 INCHES MAXIMUM
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.594 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 300.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 210.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
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737764
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011807240
NSN
5961-01-180-7240
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
III END ITEM IDENTIFICATION: KC135R AIRCRAFT
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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458-54768-501
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011807472
NSN
5961-01-180-7472
458-54768-501
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011807472
NSN
5961-01-180-7472
MFG
THE BOEING COMPANY DBA BOEING
Description
MAJOR COMPONENTS: CIRCUIT BOARD 1; DIODE 6; NO REQUIREMENT FOR RADIATION HARDNESS ASSURANCE TESTS IAW MIL-S-19500 AT THIS TIME
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6844W10P002
TRANSISTOR
NSN, MFG P/N
5961011808889
NSN
5961-01-180-8889
MFG
AMETEK INC. D IV AEROSPACE & DEFENSE
Description
CURRENT RATING PER CHARACTERISTIC: -600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AV-8A ACFT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
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639AS3668-3
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011809183
NSN
5961-01-180-9183
639AS3668-3
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011809183
NSN
5961-01-180-9183
MFG
NAVAL AIR SYSTEMS COMMAND
Description
RETAINER,SEMICONDUCTOR DEVICE
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16610117-001
SHIELD,OPTOELECTRON
NSN, MFG P/N
5961011809457
NSN
5961-01-180-9457
MFG
SYPRIS ELECTRONICS LLC
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: ALUMINUM ALLOY 5052-H32 QQ-A-250/8; ANODIZE YELLOW SURFACE TREATMENT MIL-C-5541 CLASS 1A; 2.945 IN. OD; 1.072 IN. ID,0.040 IN. THK; 3 COUNTERSUNK MTG HOLES 0.156 IN. DIA
III END ITEM IDENTIFICATION: 5895-01-125-7133
III FSC APPLICATION DATA: MOTOR ASSEMBLY,RECORDER-REPRODUCER,SIGNAL DATA
III TYPE/MODEL DESIGNATION: RD-450/ASH-33
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05-10139-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011809944
NSN
5961-01-180-9944
05-10139-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011809944
NSN
5961-01-180-9944
MFG
BALLANTINE LABORATORIES INC
Description
SEMICONDUCTOR DEVICE,DIODE
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150003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011809949
NSN
5961-01-180-9949
MFG
TECHNOLOGY DYNAMICS INC. DBA NOVA ELECTRIC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
B5C5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011809949
NSN
5961-01-180-9949
MFG
EDAL INDUSTRIES INC.
Description
SEMICONDUCTOR DEVICE,DIODE
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352-1542-012
TRANSISTOR
NSN, MFG P/N
5961011810122
NSN
5961-01-181-0122
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.50 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.352 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 95105-352-1542 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 625.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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PP7830
TRANSISTOR
NSN, MFG P/N
5961011810122
NSN
5961-01-181-0122
MFG
MICROSEMI PPC INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.50 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.352 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 95105-352-1542 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 625.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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STN1010
TRANSISTOR
NSN, MFG P/N
5961011810122
NSN
5961-01-181-0122
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 0.50 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.352 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 95105-352-1542 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 625.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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1855-0138
TRANSISTOR
NSN, MFG P/N
5961011811198
NSN
5961-01-181-1198
MFG
BR COMMUNICATIONS INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
3N138
TRANSISTOR
NSN, MFG P/N
5961011811198
NSN
5961-01-181-1198
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
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5L.5532.003.39
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011811199
NSN
5961-01-181-1199
5L.5532.003.39
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011811199
NSN
5961-01-181-1199
MFG
EADS DEUTSCHLAND GMBH -VERTEIDIGUNG UND ZIVILE SYSTEME-
Description
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 2.500 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD