My Quote Request
5961-01-214-8599
20 Products
MPZ5-32C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012148599
NSN
5961-01-214-8599
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.25 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.670 INCHES MAXIMUM
OVERALL LENGTH: 1.510 INCHES MAXIMUM
OVERALL WIDTH: 1.510 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
GZ34413A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012148599
NSN
5961-01-214-8599
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 1.25 AMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.670 INCHES MAXIMUM
OVERALL LENGTH: 1.510 INCHES MAXIMUM
OVERALL WIDTH: 1.510 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
32-90-0520
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012148600
NSN
5961-01-214-8600
32-90-0520
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012148600
NSN
5961-01-214-8600
MFG
KIKUSUI INTL CORP
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 1.10 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES NOMINAL
OVERALL LENGTH: 0.200 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.140 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
VO6G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012148600
NSN
5961-01-214-8600
MFG
HITACHI SEISAKU SY0
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 1.10 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES NOMINAL
OVERALL LENGTH: 0.200 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.140 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
32-92-0022
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012148601
NSN
5961-01-214-8601
32-92-0022
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012148601
NSN
5961-01-214-8601
MFG
KIKUSUI INTL CORP
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
HZ2B-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012148601
NSN
5961-01-214-8601
MFG
HITACHI SEISAKU SY0
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
SM-A-937584
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012148603
NSN
5961-01-214-8603
SM-A-937584
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012148603
NSN
5961-01-214-8603
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES MAXIMUM ON-STATE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-83
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 2.637 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.063 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
T510068005AB
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012148603
NSN
5961-01-214-8603
T510068005AB
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012148603
NSN
5961-01-214-8603
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES MAXIMUM ON-STATE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-83
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 2.637 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.063 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
TAS8620D
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012148603
NSN
5961-01-214-8603
TAS8620D
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012148603
NSN
5961-01-214-8603
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES MAXIMUM ON-STATE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-83
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 2.637 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.063 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
SM-D-686767
TRANSISTOR
NSN, MFG P/N
5961012148878
NSN
5961-01-214-8878
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
TRANSISTOR
Related Searches:
M57-7775
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012149543
NSN
5961-01-214-9543
MFG
MILTOPE CORPORATION DBA VT MILTOPE
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
48-P08757T001
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012149544
NSN
5961-01-214-9544
48-P08757T001
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012149544
NSN
5961-01-214-9544
MFG
MOTOROLA INC. DBA INTEGRATED INFORMATION SYSTEMS GROUP
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
D2HZ 10374-A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012149547
NSN
5961-01-214-9547
D2HZ 10374-A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012149547
NSN
5961-01-214-9547
MFG
FORD MOTOR CO
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MJ10007
TRANSISTOR
NSN, MFG P/N
5961012149673
NSN
5961-01-214-9673
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.50 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 30.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 300.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM COLLECTOR-TO-EMITTER, WITH VOLTAGE BETWEEN BASE AND EMITTER AND 450.0 MAXIMUM COLLECTOR-TO-EMITTER SUBSTAINING VOLTAGE, WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER AND 400.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE
~1: OPEN-CIRCUITED AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS
Related Searches:
JAN1N962B-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012149676
NSN
5961-01-214-9676
JAN1N962B-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012149676
NSN
5961-01-214-9676
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 11.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N962B-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL S
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.5 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0
Related Searches:
VR0962F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012149676
NSN
5961-01-214-9676
MFG
SCIENTIFIC RADIO SYSTEMS INC
Description
CURRENT RATING PER CHARACTERISTIC: 11.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N962B-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL S
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.5 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -2.0 TO 2.0
Related Searches:
2N2329
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012149677
NSN
5961-01-214-9677
2N2329
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012149677
NSN
5961-01-214-9677
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES MAXIMUM HOLDING CURRENT, DC AND 350.00 MICROAMPERES MAXIMUM GATE TRIGGER CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.2 MAXIMUM FORWARD VOLTAGE, PEAK AND 1.0 MAXIMUM GATE TRIGGER VOLTAGE, DC
Related Searches:
2SK58-S2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012149678
NSN
5961-01-214-9678
2SK58-S2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012149678
NSN
5961-01-214-9678
MFG
HITACHI SEISAKU SY0
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND 10.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 3.9 MILLIMETERS MAXIMUM
OVERALL LENGTH: 8.6 MILLIMETERS MINIMUM
OVERALL WIDTH: 6.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 270.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 4.5 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 9.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
31-20-0581
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012149678
NSN
5961-01-214-9678
31-20-0581
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012149678
NSN
5961-01-214-9678
MFG
KIKUSUI INTL CORP
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND 10.00 MILLIAMPERES MAXIMUM GATE CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 3.9 MILLIMETERS MAXIMUM
OVERALL LENGTH: 8.6 MILLIMETERS MINIMUM
OVERALL WIDTH: 6.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 270.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 4.5 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 9.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
2D4B41
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012149920
NSN
5961-01-214-9920
2D4B41
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012149920
NSN
5961-01-214-9920
MFG
TOSHIBA SYOUJI
Description
OPERATING TEMP RANGE: -40.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 24.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 13.0 MILLIMETERS NOMINAL