My Quote Request
5961-01-217-0914
20 Products
MA8314-2L4TD-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012170914
NSN
5961-01-217-0914
MA8314-2L4TD-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012170914
NSN
5961-01-217-0914
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNC
Related Searches:
32-30-0830
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012170001
NSN
5961-01-217-0001
32-30-0830
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012170001
NSN
5961-01-217-0001
MFG
KIKUSUI INTL CORP
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -250.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
32-90-1820
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012170002
NSN
5961-01-217-0002
32-90-1820
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012170002
NSN
5961-01-217-0002
MFG
KIKUSUI INTL CORP
Description
CURRENT RATING PER CHARACTERISTIC: 0.20 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 3.5 MILLIMETERS NOMINAL
OVERALL LENGTH: 5.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 28.0 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 3.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
ERB26-20
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012170002
NSN
5961-01-217-0002
MFG
FUJI DENKI SEIZOO
Description
CURRENT RATING PER CHARACTERISTIC: 0.20 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 3.5 MILLIMETERS NOMINAL
OVERALL LENGTH: 5.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 28.0 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 3.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
32-92-0360
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012170003
NSN
5961-01-217-0003
32-92-0360
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012170003
NSN
5961-01-217-0003
MFG
KIKUSUI AMERICA INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
HZ36-2L
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012170003
NSN
5961-01-217-0003
MFG
HITACHI SEISAKU SY0
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
583R531H09
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012170185
NSN
5961-01-217-0185
583R531H09
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012170185
NSN
5961-01-217-0185
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 9.00 AMPERES FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE AND 25.00 AMPERES FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REVERSE VOLTAGE, PEAK AND 70.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.450 INCHES NOMINAL
SPECIAL FEATURES: TWO 4-40 TAPPED MOUNTING HOLES.
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
655-1080
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012170185
NSN
5961-01-217-0185
655-1080
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012170185
NSN
5961-01-217-0185
MFG
MICRO USPD INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 9.00 AMPERES FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE AND 25.00 AMPERES FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REVERSE VOLTAGE, PEAK AND 70.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.450 INCHES NOMINAL
SPECIAL FEATURES: TWO 4-40 TAPPED MOUNTING HOLES.
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
SA10232
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012170185
NSN
5961-01-217-0185
SA10232
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012170185
NSN
5961-01-217-0185
MFG
SEMTECH CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 9.00 AMPERES FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE AND 25.00 AMPERES FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REVERSE VOLTAGE, PEAK AND 70.0 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.450 INCHES NOMINAL
SPECIAL FEATURES: TWO 4-40 TAPPED MOUNTING HOLES.
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
1596854-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012170227
NSN
5961-01-217-0227
1596854-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012170227
NSN
5961-01-217-0227
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-TUCSON
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
VSK1540
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012170309
NSN
5961-01-217-0309
VSK1540
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012170309
NSN
5961-01-217-0309
MFG
L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
OVERALL DIAMETER: 0.423 INCHES MINIMUM AND 0.436 INCHES MAXIMUM
Related Searches:
981587-1
TRANSISTOR
NSN, MFG P/N
5961012170594
NSN
5961-01-217-0594
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
TRANSISTOR
Related Searches:
1033866-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012170613
NSN
5961-01-217-0613
1033866-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012170613
NSN
5961-01-217-0613
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
MV5051
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012170613
NSN
5961-01-217-0613
MFG
ELECTRO-TECH SYSTEMS INC.
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
1058346-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012170614
NSN
5961-01-217-0614
1058346-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012170614
NSN
5961-01-217-0614
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
S30SC4M
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012170614
NSN
5961-01-217-0614
S30SC4M
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012170614
NSN
5961-01-217-0614
MFG
NIPPON ELECTRIC COMPANY LTD
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
SKS503
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012170614
NSN
5961-01-217-0614
SKS503
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012170614
NSN
5961-01-217-0614
MFG
VARO LLC
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
480-849-0100
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012170615
NSN
5961-01-217-0615
480-849-0100
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012170615
NSN
5961-01-217-0615
MFG
AYDIN DISPLAYS INC.
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
403800
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012170914
NSN
5961-01-217-0914
MFG
TARGET CORPORATION DBA TARGET
Description
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNC
Related Searches:
404983
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012170914
NSN
5961-01-217-0914
MFG
CARDION INC
Description
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNC