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5961-01-225-3463

20 Products

SEN-R-51

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012253463

NSN

5961-01-225-3463

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SEN-R-51

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012253463

NSN

5961-01-225-3463

MFG

RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR

Description

CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -1.0 TO 1.0

586379-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012253464

NSN

5961-01-225-3464

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586379-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012253464

NSN

5961-01-225-3464

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

SEN-R-44

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012253464

NSN

5961-01-225-3464

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SEN-R-44

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012253464

NSN

5961-01-225-3464

MFG

RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK

0322-7259P002

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961012253466

NSN

5961-01-225-3466

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0322-7259P002

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961012253466

NSN

5961-01-225-3466

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 1.60 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 150.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE

322-7259P2

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961012253466

NSN

5961-01-225-3466

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322-7259P2

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961012253466

NSN

5961-01-225-3466

MFG

L-3 COMMUNICATIONS KLEIN ASSOCIATES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 1.60 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 150.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE

ID201

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961012253466

NSN

5961-01-225-3466

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ID201

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961012253466

NSN

5961-01-225-3466

MFG

MICRO USPD INC

Description

CURRENT RATING PER CHARACTERISTIC: 1.60 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 150.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE

48-84411L31

TRANSISTOR POWER

NSN, MFG P/N

5961012255028

NSN

5961-01-225-5028

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48-84411L31

TRANSISTOR POWER

NSN, MFG P/N

5961012255028

NSN

5961-01-225-5028

MFG

MOTOROLA COMMUNICATIONS GROUP PARTS DEPT DIV OF MOTOROLA INC

95327201-0

TRANSISTOR

NSN, MFG P/N

5961012255098

NSN

5961-01-225-5098

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95327201-0

TRANSISTOR

NSN, MFG P/N

5961012255098

NSN

5961-01-225-5098

MFG

SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205

83464203-5

TRANSISTOR

NSN, MFG P/N

5961012255099

NSN

5961-01-225-5099

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83464203-5

TRANSISTOR

NSN, MFG P/N

5961012255099

NSN

5961-01-225-5099

MFG

SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205

94646506-0

TRANSISTOR

NSN, MFG P/N

5961012255100

NSN

5961-01-225-5100

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94646506-0

TRANSISTOR

NSN, MFG P/N

5961012255100

NSN

5961-01-225-5100

MFG

SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205

50240108-6

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012255101

NSN

5961-01-225-5101

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50240108-6

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012255101

NSN

5961-01-225-5101

MFG

SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205

676-1GHR201

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012255160

NSN

5961-01-225-5160

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676-1GHR201

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012255160

NSN

5961-01-225-5160

MFG

MICRO USPD INC

676-6GHR201

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012255161

NSN

5961-01-225-5161

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676-6GHR201

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961012255161

NSN

5961-01-225-5161

MFG

MICRO USPD INC

JANTX2N5683

TRANSISTOR

NSN, MFG P/N

5961012255397

NSN

5961-01-225-5397

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JANTX2N5683

TRANSISTOR

NSN, MFG P/N

5961012255397

NSN

5961-01-225-5397

MFG

FREESCALE SEMICONDUCTOR INC.

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M19500/466
MANUFACTURERS CODE: 81349
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/466
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
TERMINAL LENGTH: 0.312 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 1.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE, DC

M19500/466

TRANSISTOR

NSN, MFG P/N

5961012255397

NSN

5961-01-225-5397

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M19500/466

TRANSISTOR

NSN, MFG P/N

5961012255397

NSN

5961-01-225-5397

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M19500/466
MANUFACTURERS CODE: 81349
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/466
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
TERMINAL LENGTH: 0.312 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 1.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE, DC

2461882

TRANSISTOR

NSN, MFG P/N

5961012255398

NSN

5961-01-225-5398

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2461882

TRANSISTOR

NSN, MFG P/N

5961012255398

NSN

5961-01-225-5398

MFG

ROHDE & SCHWARZ GMBH & CO. KG

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.670 INCHES MINIMUM
OVERALL LENGTH: 0.190 INCHES NOMINAL
OVERALL WIDTH: 0.145 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM GATE TO SOURCE VOLTAGE

E174

TRANSISTOR

NSN, MFG P/N

5961012255398

NSN

5961-01-225-5398

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E174

TRANSISTOR

NSN, MFG P/N

5961012255398

NSN

5961-01-225-5398

MFG

SILICONIX INCORPORATED D IV SILICONIX

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.670 INCHES MINIMUM
OVERALL LENGTH: 0.190 INCHES NOMINAL
OVERALL WIDTH: 0.145 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM GATE TO SOURCE VOLTAGE

J174

TRANSISTOR

NSN, MFG P/N

5961012255398

NSN

5961-01-225-5398

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J174

TRANSISTOR

NSN, MFG P/N

5961012255398

NSN

5961-01-225-5398

MFG

PHILLOCRAFT CO

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.670 INCHES MINIMUM
OVERALL LENGTH: 0.190 INCHES NOMINAL
OVERALL WIDTH: 0.145 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM GATE TO SOURCE VOLTAGE

124-0354

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012255401

NSN

5961-01-225-5401

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124-0354

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012255401

NSN

5961-01-225-5401

MFG

KEPCO INC.

Description

CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM FORWARD CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 180.0 DEG CELSIUS CASE
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.450 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.688 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
THREAD QUANTITY PER INCH: 28
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE

FBL-00-170

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012255402

NSN

5961-01-225-5402

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FBL-00-170

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961012255402

NSN

5961-01-225-5402

MFG

VEECO INSTRUMENTS INC LAMBDA DIV

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 1.400 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.669 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 NOMINAL REVERSE VOLTAGE, PEAK