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5961-01-226-2098
20 Products
2004586902
TRANSISTOR
NSN, MFG P/N
5961012262098
NSN
5961-01-226-2098
MFG
VIDEOTEK INC.
Description
CURRENT RATING PER CHARACTERISTIC: 3.50 AMPERES MAXIMUM BASE CURRENT, DC AND 3.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 8.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 12.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
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5961012260002
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012260002
NSN
5961-01-226-0002
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: PATRIOT, SURFACE TO AIR MISSILES
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SEMICONDUCTOR DEVICE,DIODE
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5961012260002
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MIS-19836/63
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012260002
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5961-01-226-0002
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
III END ITEM IDENTIFICATION: PATRIOT, SURFACE TO AIR MISSILES
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479-0418-064
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012260429
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5961-01-226-0429
479-0418-064
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012260429
NSN
5961-01-226-0429
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 32.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N963B-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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5961012260429
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NSN, MFG P/N
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MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 32.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N963B-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
SEMICONDUCTOR DEVICE,DIODE
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5961012260718
NSN
5961-01-226-0718
MFG
SOLID STATE DEVICES INC.
Description
SEMICONDUCTOR DEVICE,DIODE
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RECTIFIER,SEMICONDUCTOR DEVICE
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5961012261259
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RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012261259
NSN
5961-01-226-1259
MFG
CONTINENTAL ELECTRONICS CORPORATION
Description
RECTIFIER,SEMICONDUCTOR DEVICE
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RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012261259
NSN
5961-01-226-1259
MFG
EDAL INDUSTRIES INC.
Description
RECTIFIER,SEMICONDUCTOR DEVICE
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RECTIFIER,SEMICONDUCTOR DEVICE
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5961012261260
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5961012261260
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5961-01-226-1260
MFG
CONTINENTAL ELECTRONICS CORPORATION
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 2 CENTER TAP 1 PHASE
III END ITEM IDENTIFICATION: AN/FPS-118
MATERIAL: SILICON
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5961012261260
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NSN, MFG P/N
5961012261260
NSN
5961-01-226-1260
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 2 CENTER TAP 1 PHASE
III END ITEM IDENTIFICATION: AN/FPS-118
MATERIAL: SILICON
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NSN, MFG P/N
5961012261260
NSN
5961-01-226-1260
MFG
EDAL INDUSTRIES INC.
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 2 CENTER TAP 1 PHASE
III END ITEM IDENTIFICATION: AN/FPS-118
MATERIAL: SILICON
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1260 0101
MICROCIRCUIT
NSN, MFG P/N
5961012261299
NSN
5961-01-226-1299
MFG
BR COMMUNICATIONS INC
Description
MICROCIRCUIT
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0263.9594.00
TRANSISTOR
NSN, MFG P/N
5961012262096
NSN
5961-01-226-2096
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.054 INCHES NOMINAL
OVERALL LENGTH: 0.413 INCHES NOMINAL
OVERALL WIDTH: 0.398 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 RIBBON
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NSN, MFG P/N
5961012262096
NSN
5961-01-226-2096
MFG
HEWLETT PACKARD CO
Description
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.054 INCHES NOMINAL
OVERALL LENGTH: 0.413 INCHES NOMINAL
OVERALL WIDTH: 0.398 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 RIBBON
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NSN, MFG P/N
5961012262096
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5961-01-226-2096
MFG
NIPPON ELECTRIC COMPANY LTD
Description
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.054 INCHES NOMINAL
OVERALL LENGTH: 0.413 INCHES NOMINAL
OVERALL WIDTH: 0.398 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 RIBBON
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NSN, MFG P/N
5961012262096
NSN
5961-01-226-2096
MFG
TARGET CORPORATION DBA TARGET
Description
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.054 INCHES NOMINAL
OVERALL LENGTH: 0.413 INCHES NOMINAL
OVERALL WIDTH: 0.398 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 RIBBON
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TRANSISTOR
NSN, MFG P/N
5961012262096
NSN
5961-01-226-2096
MFG
FLUKE CORPORATION
Description
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.054 INCHES NOMINAL
OVERALL LENGTH: 0.413 INCHES NOMINAL
OVERALL WIDTH: 0.398 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 RIBBON
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TRANSISTOR
NSN, MFG P/N
5961012262096
NSN
5961-01-226-2096
MFG
NEC ELECTRONICS U S A INC ELECTRON DIV
Description
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.054 INCHES NOMINAL
OVERALL LENGTH: 0.413 INCHES NOMINAL
OVERALL WIDTH: 0.398 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 RIBBON
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2003207306
TRANSISTOR
NSN, MFG P/N
5961012262097
NSN
5961-01-226-2097
MFG
VIDEOTEK INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 1.230 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 PIN
TRANSFER RATIO: 75.0 NOMINAL SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-BASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 150.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN