My Quote Request
5961-01-230-4960
20 Products
TPQ6502
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012304960
NSN
5961-01-230-4960
TPQ6502
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012304960
NSN
5961-01-230-4960
MFG
SPRAGUE ELECTRIC CO WORLD HQS
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
OVERALL WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL LENGTH: 0.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MINIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN ALL TRANSISTOR
Related Searches:
D532EGC105
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012300988
NSN
5961-01-230-0988
D532EGC105
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012300988
NSN
5961-01-230-0988
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: F-15 ACFT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS AND CASE PLATED GOLD
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-228AB
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL HEIGHT: 0.640 INCHES MAXIMUM
OVERALL LENGTH: 0.720 INCHES MINIMUM AND 0.820 INCHES MAXIMUM
OVERALL WIDTH: 0.625 INCHES MINIMUM AND 0.675 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
PPR1066
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012300988
NSN
5961-01-230-0988
MFG
MICROSEMI PPC INC
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: F-15 ACFT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS AND CASE PLATED GOLD
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-228AB
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL HEIGHT: 0.640 INCHES MAXIMUM
OVERALL LENGTH: 0.720 INCHES MINIMUM AND 0.820 INCHES MAXIMUM
OVERALL WIDTH: 0.625 INCHES MINIMUM AND 0.675 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
SZG35009K7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012302096
NSN
5961-01-230-2096
SZG35009K7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012302096
NSN
5961-01-230-2096
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
143317040
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012302105
NSN
5961-01-230-2105
143317040
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012302105
NSN
5961-01-230-2105
MFG
EATON CORPORATION
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE THYRISTOR
INCLOSURE MATERIAL: CERAMIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 1.180 INCHES NOMINAL
OVERALL LENGTH: 3.620 INCHES NOMINAL
OVERALL WIDTH: 0.780 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE THYRISTOR
TERMINAL TYPE AND QUANTITY: 3 SCREW AND 4 QUICK DISCONNECT, MALE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE ALL SEMICONDUCTOR DEVICE THYRISTOR
Related Searches:
13160353
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012302287
NSN
5961-01-230-2287
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 1260-01-122-8735
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.237 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.430 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
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142232-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012302287
NSN
5961-01-230-2287
142232-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012302287
NSN
5961-01-230-2287
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 1260-01-122-8735
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.237 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.430 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
UES706HR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012302287
NSN
5961-01-230-2287
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 1260-01-122-8735
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.237 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.430 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
2N6496
TRANSISTOR
NSN, MFG P/N
5961012302970
NSN
5961-01-230-2970
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 5.00 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 140.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 130.0 MAXIMUM COLLECTOR-TO-EMITTER SUBSTAINING VOLTAGE, RESISTANCE BETWEEN BASE AND EMITTER AND 110.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 7.0 MAXIMUM
~1: EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
F15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012302971
NSN
5961-01-230-2971
MFG
SEMTECH CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 MICROAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 1260-01-122-8735
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: LEADS SILVER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES NOMINAL
OVERALL LENGTH: 0.223 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.730 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1500.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
M15F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012302971
NSN
5961-01-230-2971
MFG
VOLTAGE MULTIPLIERS INC. DBA V M I
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 MICROAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 1260-01-122-8735
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: LEADS SILVER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES NOMINAL
OVERALL LENGTH: 0.223 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.730 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1500.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
MA15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012302971
NSN
5961-01-230-2971
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 MICROAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 1260-01-122-8735
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: LEADS SILVER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES NOMINAL
OVERALL LENGTH: 0.223 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.730 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1500.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
SM-C-852302-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012302971
NSN
5961-01-230-2971
SM-C-852302-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012302971
NSN
5961-01-230-2971
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 MICROAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 1260-01-122-8735
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: LEADS SILVER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES NOMINAL
OVERALL LENGTH: 0.223 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.730 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1500.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
IT130A-TO71
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012302972
NSN
5961-01-230-2972
IT130A-TO71
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012302972
NSN
5961-01-230-2972
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-71
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 PIN
TRANSFER RATIO: 200.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 90.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 14.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
Related Searches:
0N270694
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012304534
NSN
5961-01-230-4534
MFG
NATIONAL SECURITY AGENCY
Description
CURRENT RATING PER CHARACTERISTIC: 0.05 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
PS46825
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012304534
NSN
5961-01-230-4534
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 0.05 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 70.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.6 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
SG7969
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012304808
NSN
5961-01-230-4808
SG7969
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012304808
NSN
5961-01-230-4808
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
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1N5084
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012304955
NSN
5961-01-230-4955
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 47.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
1N962B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012304956
NSN
5961-01-230-4956
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
INCLOSURE MATERIAL: GLASS
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.0 NOMINAL BREAKDOWN VOLTAGE, DC
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23-039F00M00R00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012304956
NSN
5961-01-230-4956
23-039F00M00R00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012304956
NSN
5961-01-230-4956
MFG
CONCURRENT COMPUTER CORPORATION
Description
INCLOSURE MATERIAL: GLASS
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.0 NOMINAL BREAKDOWN VOLTAGE, DC