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5961-01-326-3911

20 Products

6206031

COVER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013263911

NSN

5961-01-326-3911

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6206031

COVER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013263911

NSN

5961-01-326-3911

MFG

NAVAL SEA SYSTEMS COMMAND

Description

DESIGN CONTROL REFERENCE: 6206031
III END ITEM IDENTIFICATION: COMMAND AND CONTROL SECTION,TORPEDO MK50
MANUFACTURERS CODE: 53711
OVERALL HEIGHT: 0.150 INCHES NOMINAL
SPECIAL FEATURES: MATL SANTOPRENE,BLACK
THE MANUFACTURERS DATA:

MP5X1769

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013262793

NSN

5961-01-326-2793

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MP5X1769

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013262793

NSN

5961-01-326-2793

MFG

MPULSE MICROWAVE INC

Description

FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: LIMITER
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.075 INCHES MINIMUM AND 0.086 INCHES MAXIMUM
OVERALL LENGTH: 0.040 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 FLANGE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 180.0 MAXIMUM BREAKDOWN VOLTAGE, DC

30-251-9AB

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013262794

NSN

5961-01-326-2794

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30-251-9AB

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013262794

NSN

5961-01-326-2794

MFG

CORDOVA CORP

30-251-9BA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013262794

NSN

5961-01-326-2794

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30-251-9BA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013262794

NSN

5961-01-326-2794

MFG

BELL HELICOPTER TEXTRON INC.

JANTX1N5551

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013262794

NSN

5961-01-326-2794

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JANTX1N5551

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013262794

NSN

5961-01-326-2794

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

097353

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961013262795

NSN

5961-01-326-2795

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097353

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961013262795

NSN

5961-01-326-2795

MFG

MILLER ELECTRIC MFG CO

Description

COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE AND 2 SEMICONDUCTOR DEVICE THYRISTOR
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES NOMINAL FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE THYRISTOR 25.00 AMPERES NOMINAL FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT AND UNTHREADED HOLE
OVERALL HEIGHT: 1.060 INCHES NOMINAL
OVERALL LENGTH: 2.500 INCHES NOMINAL
OVERALL WIDTH: 1.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE THYRISTOR SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 6 QUICK DISCONNECT, MALE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 480.0 MAXIMUM FORWARD VOLTAGE, TOTAL RMS ALL SEMICONDUCTOR DEVICE THYRISTOR 480.0 MAXIMUM FORWARD VOLTAGE, TOTAL RMS ALL SEMICONDUCTOR DEVICE DIODE

M252515FV

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961013262795

NSN

5961-01-326-2795

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M252515FV

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961013262795

NSN

5961-01-326-2795

MFG

SILICON POWER CUBE CORP

Description

COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE AND 2 SEMICONDUCTOR DEVICE THYRISTOR
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES NOMINAL FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE THYRISTOR 25.00 AMPERES NOMINAL FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT AND UNTHREADED HOLE
OVERALL HEIGHT: 1.060 INCHES NOMINAL
OVERALL LENGTH: 2.500 INCHES NOMINAL
OVERALL WIDTH: 1.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE THYRISTOR SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 6 QUICK DISCONNECT, MALE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 480.0 MAXIMUM FORWARD VOLTAGE, TOTAL RMS ALL SEMICONDUCTOR DEVICE THYRISTOR 480.0 MAXIMUM FORWARD VOLTAGE, TOTAL RMS ALL SEMICONDUCTOR DEVICE DIODE

500-00150

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013262830

NSN

5961-01-326-2830

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500-00150

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013262830

NSN

5961-01-326-2830

MFG

BALDOR ELECTRIC COMPANY DBA BALDOR GENERATOR DIV BALDOR GENERATORS

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 75.00 MICROAMPERES REVERSE CURRENT, DC AND 150.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 10 INVERTED CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.890 INCHES MAXIMUM
OVERALL LENGTH: 1.300 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

PKCN80F

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013262830

NSN

5961-01-326-2830

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PKCN80F

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013262830

NSN

5961-01-326-2830

MFG

ELECTRONIC DEVICES INC DBA E D I

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 75.00 MICROAMPERES REVERSE CURRENT, DC AND 150.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 10 INVERTED CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.890 INCHES MAXIMUM
OVERALL LENGTH: 1.300 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

2557529

TRANSISTOR

NSN, MFG P/N

5961013263627

NSN

5961-01-326-3627

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2557529

TRANSISTOR

NSN, MFG P/N

5961013263627

NSN

5961-01-326-3627

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

DESIGN CONTROL REFERENCE: 2557529
III END ITEM IDENTIFICATION: TORPEDO MK46MOD5
MANUFACTURERS CODE: 10001
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: UNIJUNCTION
TERMINAL CIRCLE DIAMETER: 0.017 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
THE MANUFACTURERS DATA:

6206054

TRANSISTOR

NSN, MFG P/N

5961013263628

NSN

5961-01-326-3628

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6206054

TRANSISTOR

NSN, MFG P/N

5961013263628

NSN

5961-01-326-3628

MFG

NAVAL SEA SYSTEMS COMMAND

Description

DESIGN CONTROL REFERENCE: 6206054
III END ITEM IDENTIFICATION: COMMAND AND CONTROL SECTION,TORPEDO MK50
MANUFACTURERS CODE: 53711
OVERALL HEIGHT: 0.320 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 PIN
THE MANUFACTURERS DATA:

6206055

TRANSISTOR

NSN, MFG P/N

5961013263629

NSN

5961-01-326-3629

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6206055

TRANSISTOR

NSN, MFG P/N

5961013263629

NSN

5961-01-326-3629

MFG

NAVAL SEA SYSTEMS COMMAND

Description

DESIGN CONTROL REFERENCE: 6206055
III END ITEM IDENTIFICATION: COMMAND AND CONTROL SECTION,TORPEDO MK50
MANUFACTURERS CODE: 53711
OVERALL HEIGHT: 0.320 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 PIN
THE MANUFACTURERS DATA:

1855-0606

TRANSISTOR

NSN, MFG P/N

5961013263630

NSN

5961-01-326-3630

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1855-0606

TRANSISTOR

NSN, MFG P/N

5961013263630

NSN

5961-01-326-3630

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 500.00 NANOAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.187 INCHES NOMINAL
OVERALL LENGTH: 0.593 INCHES NOMINAL
OVERALL WIDTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

MTP5N40

TRANSISTOR

NSN, MFG P/N

5961013263630

NSN

5961-01-326-3630

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MTP5N40

TRANSISTOR

NSN, MFG P/N

5961013263630

NSN

5961-01-326-3630

MFG

FREESCALE SEMICONDUCTOR INC.

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 500.00 NANOAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.187 INCHES NOMINAL
OVERALL LENGTH: 0.593 INCHES NOMINAL
OVERALL WIDTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

RFP7N40

TRANSISTOR

NSN, MFG P/N

5961013263630

NSN

5961-01-326-3630

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RFP7N40

TRANSISTOR

NSN, MFG P/N

5961013263630

NSN

5961-01-326-3630

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 250.00 MICROAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 500.00 NANOAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.187 INCHES NOMINAL
OVERALL LENGTH: 0.593 INCHES NOMINAL
OVERALL WIDTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE

5816763

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013263631

NSN

5961-01-326-3631

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5816763

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013263631

NSN

5961-01-326-3631

MFG

NAVAL SEA SYSTEMS COMMAND

Description

DESIGN CONTROL REFERENCE: 5816763
III END ITEM IDENTIFICATION: COMMAND AND CONTROL SECTION,TORPEDO MK50
MANUFACTURERS CODE: 53711
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.110 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
OVERALL LENGTH: 1.930 INCHES MINIMUM AND 2.900 INCHES MAXIMUM
SPECIAL FEATURES: REVERSE VOLTAGE,PEAK,NON-REPETITIVE 400V,FREE AIR DC OUTPUT 3AMP
TERMINAL CIRCLE DIAMETER: 0.037 INCHES MINIMUM AND 0.042 INCHES MAXIMUM
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

1901-0747

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013263632

NSN

5961-01-326-3632

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1901-0747

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013263632

NSN

5961-01-326-3632

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CAPACITANCE RATING IN PICOFARADS: 0.4 MAXIMUM
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: NIMIRTZ CLASS CVN; FORRESTAL CLASS CV; SPRUANCE CLASS DD (963); ENGINE, AIRCRAFT TF33-PW-102 (C-135E, EC-135H/K/P); TICONDEROGA CLASS CG (47); OLIVER PERRY CLASS FFG; ARLEIGH BURKE CLASS DDG; LANDING CRAFT AIR CUSHION (LCAC); KIDD CLASS DDG
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEPOAN SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PIN
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS

5082-5232

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013263632

NSN

5961-01-326-3632

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5082-5232

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013263632

NSN

5961-01-326-3632

MFG

HEWLETT PACKARD CO

Description

CAPACITANCE RATING IN PICOFARADS: 0.4 MAXIMUM
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: NIMIRTZ CLASS CVN; FORRESTAL CLASS CV; SPRUANCE CLASS DD (963); ENGINE, AIRCRAFT TF33-PW-102 (C-135E, EC-135H/K/P); TICONDEROGA CLASS CG (47); OLIVER PERRY CLASS FFG; ARLEIGH BURKE CLASS DDG; LANDING CRAFT AIR CUSHION (LCAC); KIDD CLASS DDG
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEPOAN SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PIN
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS

5624516

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013263795

NSN

5961-01-326-3795

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5624516

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961013263795

NSN

5961-01-326-3795

MFG

NAVAL SEA SYSTEMS COMMAND

Description

DESIGN CONTROL REFERENCE: 5624516
III END ITEM IDENTIFICATION: COMMAND AND CONTROL SECTION,MK50 TORPEDO
MANUFACTURERS CODE: 53711
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.000 INCHES MAXIMUM
OVERALL LENGTH: 0.320 INCHES MINIMUM AND 0.360 INCHES MAXIMUM
SPECIAL FEATURES: FAST-RECOVERY
TERMINAL TYPE AND QUANTITY: 3 WIRE LEAD
THE MANUFACTURERS DATA:

5816765

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013263796

NSN

5961-01-326-3796

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5816765

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013263796

NSN

5961-01-326-3796

MFG

NAVAL SEA SYSTEMS COMMAND

Description

DESIGN CONTROL REFERENCE: 5816765
III END ITEM IDENTIFICATION: COMMAND AND CONTROL SECTION,TORPEDO MK50
MANUFACTURERS CODE: 53711
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.250 INCHES MAXIMUM
OVERALL LENGTH: 1.980 INCHES MINIMUM AND 2.020 INCHES MAXIMUM
OVERALL WIDTH: 0.980 INCHES MINIMUM AND 1.020 INCHES MAXIMUM
SPECIAL FEATURES: BRIDGE RECTIFIER ASSY
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
THE MANUFACTURERS DATA: