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5961-01-337-3975

20 Products

S50410

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013373975

NSN

5961-01-337-3975

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S50410

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013373975

NSN

5961-01-337-3975

MFG

MICROSEMI CORP-COLORADO

8507001-123

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013370524

NSN

5961-01-337-0524

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8507001-123

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013370524

NSN

5961-01-337-0524

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE

Description

DESIGN CONTROL REFERENCE: 8507001-123
MANUFACTURERS CODE: 07187
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:

2-SK-316

TRANSISTOR

NSN, MFG P/N

5961013371358

NSN

5961-01-337-1358

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2-SK-316

TRANSISTOR

NSN, MFG P/N

5961013371358

NSN

5961-01-337-1358

MFG

VIDEOSPECTION INC. DBA VIDEOSPECTION OF UTAH

MMBR5031

TRANSISTOR

NSN, MFG P/N

5961013371359

NSN

5961-01-337-1359

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MMBR5031

TRANSISTOR

NSN, MFG P/N

5961013371359

NSN

5961-01-337-1359

MFG

VIDEOSPECTION INC. DBA VIDEOSPECTION OF UTAH

A501

TRANSISTOR

NSN, MFG P/N

5961013371661

NSN

5961-01-337-1661

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A501

TRANSISTOR

NSN, MFG P/N

5961013371661

NSN

5961-01-337-1661

MFG

PHILIPS SEMICONDUCTORS INC

Description

POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON

10124783-101

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013372045

NSN

5961-01-337-2045

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10124783-101

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013372045

NSN

5961-01-337-2045

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 1.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEMS; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 75.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

JANTXV1N4148-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013372045

NSN

5961-01-337-2045

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JANTXV1N4148-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013372045

NSN

5961-01-337-2045

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 1.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEMS; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 75.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

20-00774-001

TRANSISTOR

NSN, MFG P/N

5961013372215

NSN

5961-01-337-2215

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20-00774-001

TRANSISTOR

NSN, MFG P/N

5961013372215

NSN

5961-01-337-2215

MFG

RAYTHEON COMPANY DBA RAYTHEON

263-44-00005

TRANSISTOR

NSN, MFG P/N

5961013372532

NSN

5961-01-337-2532

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263-44-00005

TRANSISTOR

NSN, MFG P/N

5961013372532

NSN

5961-01-337-2532

MFG

L-3 COMMUNICATIONS CORPORATION DBA L3 COMMUNICATION AVIATION RECORDERS DIVISION DIV L3 COMMUNICATIONS CORPORATION AVIATION RECORDERS DIVISION

Description

(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE - FRENCH NAVY AIR
III END ITEM IDENTIFICATION: BR1150,FAIRCHILD WESTON SYSTEMS INC

6L.5501.108.00-308829

TRANSISTOR

NSN, MFG P/N

5961013372533

NSN

5961-01-337-2533

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6L.5501.108.00-308829

TRANSISTOR

NSN, MFG P/N

5961013372533

NSN

5961-01-337-2533

MFG

SELEX COMMUNICATIONS GMBH

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
INTERNAL CONFIGURATION: FIELD EFFECT

SD1113DD

TRANSISTOR

NSN, MFG P/N

5961013372533

NSN

5961-01-337-2533

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SD1113DD

TRANSISTOR

NSN, MFG P/N

5961013372533

NSN

5961-01-337-2533

MFG

TOPAZ SEMICONDUCTOR INC SUB OF HYTEK MICROSYSTEMS INC

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
INTERNAL CONFIGURATION: FIELD EFFECT

1N4872

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013372536

NSN

5961-01-337-2536

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1N4872

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013372536

NSN

5961-01-337-2536

MFG

SPACE POWER ELECTRONICS INC

Description

CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 50-HZ CYCLE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

1N4340

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013372537

NSN

5961-01-337-2537

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1N4340

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013372537

NSN

5961-01-337-2537

MFG

SPACE POWER ELECTRONICS INC

Description

OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL

250JB10L

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013372538

NSN

5961-01-337-2538

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250JB10L

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013372538

NSN

5961-01-337-2538

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES NOMINAL PEAK FORWARD SURGE CURRENT
OVERALL LENGTH: 1.100 INCHES NOMINAL
OVERALL WIDTH: 1.100 INCHES NOMINAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 NOMINAL REVERSE VOLTAGE, TOTAL RMS

847-60A-BR

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013372539

NSN

5961-01-337-2539

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847-60A-BR

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013372539

NSN

5961-01-337-2539

MFG

AMETEK PROGRAMMABLE POWER INC.

Description

III END ITEM IDENTIFICATION: ELGAR CORP MODEL NUMBER: 1751SL

1712829-24

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013372540

NSN

5961-01-337-2540

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1712829-24

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013372540

NSN

5961-01-337-2540

MFG

L-3 COMMUNICATIONS CORPORATION DBA COMMUNICATION SYSTEMS - EAST DIVISION

Description

(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE - FRENCH AIR FORCE

190110

TRANSISTOR

NSN, MFG P/N

5961013372966

NSN

5961-01-337-2966

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190110

TRANSISTOR

NSN, MFG P/N

5961013372966

NSN

5961-01-337-2966

MFG

TECHNOLOGY DYNAMICS INC. DBA NOVA ELECTRIC

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: HALL EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR SUPPLY VOLTAGE

MMP-100A

TRANSISTOR

NSN, MFG P/N

5961013372966

NSN

5961-01-337-2966

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MMP-100A

TRANSISTOR

NSN, MFG P/N

5961013372966

NSN

5961-01-337-2966

MFG

HEALTH MEDIA INTERNATIONAL DBA ENERGY SCIENCE/AMPLOC DIV ENERGY SCIENCE

Description

CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: HALL EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR SUPPLY VOLTAGE

353-0403-022

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013373545

NSN

5961-01-337-3545

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353-0403-022

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013373545

NSN

5961-01-337-3545

MFG

ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 150.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 420.0 FORWARD VOLTAGE, TOTAL RMS AND 600.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 1.220 INCHES MINIMUM AND 1.280 INCHES MAXIMUM
OVERALL WIDTH: 0.720 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 5 TURRET

SA10158

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013373545

NSN

5961-01-337-3545

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SA10158

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961013373545

NSN

5961-01-337-3545

MFG

SEMTECH CORPORATION

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 150.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 420.0 FORWARD VOLTAGE, TOTAL RMS AND 600.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 1.220 INCHES MINIMUM AND 1.280 INCHES MAXIMUM
OVERALL WIDTH: 0.720 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 5 TURRET