My Quote Request
5961-01-541-2780
20 Products
CR163-01E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015412780
NSN
5961-01-541-2780
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
929107-0014
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015410961
NSN
5961-01-541-0961
929107-0014
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015410961
NSN
5961-01-541-0961
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC
III PART NAME ASSIGNED BY CONTROLLING AGENCY: WATT PEAK POWER ZENER TRANSIENT VOLTAGE SUPPRESSOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.075 INCHES MINIMUM AND 0.095 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 54.0 NOMINAL WORKING PEAK REVERSE VOLTAGE
Related Searches:
SMLJ13A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015410982
NSN
5961-01-541-0982
MFG
MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 139.40 AMPERES NOMINAL PEAK REPETITIVE OFF-STATE CURRENT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE,TRANSIENT ABSORPTION ZENER,UNDIRECTIONAL AND BIDIRECTIONAL, SURFACE MOUNT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.075 INCHES MINIMUM AND 0.095 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
OVERALL WIDTH: 0.220 INCHES MINIMUM AND 0.245 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 14.4 MINIMUM BREAKOVER VOLTAGE, DC AND 15.9 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
T5961-0054-005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015410982
NSN
5961-01-541-0982
T5961-0054-005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015410982
NSN
5961-01-541-0982
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 139.40 AMPERES NOMINAL PEAK REPETITIVE OFF-STATE CURRENT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE,TRANSIENT ABSORPTION ZENER,UNDIRECTIONAL AND BIDIRECTIONAL, SURFACE MOUNT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.075 INCHES MINIMUM AND 0.095 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
OVERALL WIDTH: 0.220 INCHES MINIMUM AND 0.245 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 14.4 MINIMUM BREAKOVER VOLTAGE, DC AND 15.9 MAXIMUM BREAKOVER VOLTAGE, DC
Related Searches:
UPT5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015410983
NSN
5961-01-541-0983
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 89.40 AMPERES MAXIMUM PEAK PULSE CURRENT
III END ITEM IDENTIFICATION: C-17A, AIRCRAFT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.075 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
MMBTA06
TRANSISTOR
NSN, MFG P/N
5961015411778
NSN
5961-01-541-1778
MFG
FAIRCHILD SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR,GENERAL PURPOSE, NPN
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.075 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, MAXIMUM PEAK, TOTAL VALUE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC
Related Searches:
T5961-0060-001
TRANSISTOR
NSN, MFG P/N
5961015411778
NSN
5961-01-541-1778
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR,GENERAL PURPOSE, NPN
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.075 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, MAXIMUM PEAK, TOTAL VALUE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC
Related Searches:
28455/302
TRANSISTOR
NSN, MFG P/N
5961015411810
NSN
5961-01-541-1810
MFG
AEROFLEX WICHITA INC.
Description
III END ITEM IDENTIFICATION: GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT GPETE
SPECIAL FEATURES: USED ON 2947A(51190), TEST SET, RADIO
Related Searches:
28371/663
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015411820
NSN
5961-01-541-1820
MFG
AEROFLEX WICHITA INC.
Description
III END ITEM IDENTIFICATION: GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT GPETE
SPECIAL FEATURES: USED ON 2947A(51190), TEST SET, RADIO
Related Searches:
BDW92
TRANSISTOR
NSN, MFG P/N
5961015411980
NSN
5961-01-541-1980
MFG
SPACE POWER ELECTRONICS INC
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: RADAR 3D E/F BAND, LONG RANGE
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
INTERNAL JUNCTION CONFIGURATION: PNP
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.016 INCHES MINIMUM AND 0.021 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
TR204-01E
TRANSISTOR
NSN, MFG P/N
5961015412099
NSN
5961-01-541-2099
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
TRANSISTOR
Related Searches:
TR498-01G
TRANSISTOR
NSN, MFG P/N
5961015412103
NSN
5961-01-541-2103
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
TRANSISTOR
Related Searches:
TR504-01G
TRANSISTOR
NSN, MFG P/N
5961015412106
NSN
5961-01-541-2106
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
TRANSISTOR
Related Searches:
TR502-01G
TRANSISTOR
NSN, MFG P/N
5961015412109
NSN
5961-01-541-2109
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
TRANSISTOR
Related Searches:
TR500-01G
TRANSISTOR
NSN, MFG P/N
5961015412112
NSN
5961-01-541-2112
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
TRANSISTOR
Related Searches:
TR459-02G
TRANSISTOR
NSN, MFG P/N
5961015412124
NSN
5961-01-541-2124
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
TRANSISTOR
Related Searches:
CR186-12E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015412167
NSN
5961-01-541-2167
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
CR232-01E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015412214
NSN
5961-01-541-2214
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICE, DIODE, SILICON, SCREENING PROCEDURE
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
CR168-39E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015412534
NSN
5961-01-541-2534
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
CR166-02E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015412601
NSN
5961-01-541-2601
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
SEMICONDUCTOR DEVICE,DIODE