My Quote Request
5961-01-358-6108
20 Products
8841-00
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013586108
NSN
5961-01-358-6108
8841-00
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013586108
NSN
5961-01-358-6108
MFG
LAB-VOLT SYSTEMS INC.
Description
COMPONENT NAME AND QUANTITY: 6 SEMICONDUCTOR DEVICE THYRISTOR
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE SINGLE SEMICONDUCTOR DEVICE THYRISTOR
OVERALL HEIGHT: 6.100 INCHES NOMINAL
OVERALL LENGTH: 17.300 INCHES NOMINAL
OVERALL WIDTH: 11.300 INCHES NOMINAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL PEAK-POINT VOLTAGE SINGLE SEMICONDUCTOR DEVICE THYRISTOR
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P20P-N5003-A65
TRANSISTOR
NSN, MFG P/N
5961013581877
NSN
5961-01-358-1877
MFG
LA MARCHE MFG. CO. DBA LA MARCHE
Description
TRANSISTOR
Related Searches:
P17H-200-001A2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013581878
NSN
5961-01-358-1878
P17H-200-001A2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013581878
NSN
5961-01-358-1878
MFG
LA MARCHE MFG. CO. DBA LA MARCHE
Description
SEMICONDUCTOR DEVICE,DIODE
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P17D-022Z-A4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013581879
NSN
5961-01-358-1879
P17D-022Z-A4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013581879
NSN
5961-01-358-1879
MFG
LA MARCHE MFG. CO. DBA LA MARCHE
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
204-0025-012
TRANSISTOR
NSN, MFG P/N
5961013581920
NSN
5961-01-358-1920
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 1.10 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL HEIGHT: 0.870 INCHES NOMINAL
OVERALL LENGTH: 0.590 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.870 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 27.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 33.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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SRF7069H
TRANSISTOR
NSN, MFG P/N
5961013581920
NSN
5961-01-358-1920
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.10 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.164 INCHES
OVERALL HEIGHT: 0.870 INCHES NOMINAL
OVERALL LENGTH: 0.590 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
OVERALL WIDTH: 0.870 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 27.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 33.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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MTP12N08
TRANSISTOR
NSN, MFG P/N
5961013582511
NSN
5961-01-358-2511
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.570 INCHES MINIMUM AND 0.620 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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JANTX2N7224
TRANSISTOR
NSN, MFG P/N
5961013582682
NSN
5961-01-358-2682
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 34.00 AMPERES MAXIMUM SOURCE CURRENT AND 34.00 AMPERES MAXIMUM DRAIN CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N7224
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/592
OVERALL HEIGHT: 0.249 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.790 INCHES MINIMUM AND 0.800 INCHES MAXIMUM
OVERALL WIDTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/592 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013584008
NSN
5961-01-358-4008
13-1332011-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013584008
NSN
5961-01-358-4008
MFG
GTE GOVERNMENT SYSTEMS CORP STRATEGIC SYSTEMS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.35 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -1.0 TO 1.0
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JANTXV1N823-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013584008
NSN
5961-01-358-4008
JANTXV1N823-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013584008
NSN
5961-01-358-4008
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.35 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -1.0 TO 1.0
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JANTX1N4130
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013584009
NSN
5961-01-358-4009
JANTX1N4130
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013584009
NSN
5961-01-358-4009
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.60 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 95.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4130-1
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 68.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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1N4001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013584010
NSN
5961-01-358-4010
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
322-7236P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013584010
NSN
5961-01-358-4010
322-7236P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013584010
NSN
5961-01-358-4010
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
A5S168
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013584788
NSN
5961-01-358-4788
MFG
FEI MICROWAVE INC
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MINIMUM BREAKDOWN VOLTAGE, DC
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IRKD71-12
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013584790
NSN
5961-01-358-4790
IRKD71-12
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013584790
NSN
5961-01-358-4790
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE ALL SEMICONDUCTOR DEVICE DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
OVERALL HEIGHT: 1.450 INCHES MAXIMUM
OVERALL LENGTH: 3.620 INCHES MAXIMUM
OVERALL WIDTH: 0.780 INCHES MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
743C4540-01-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013585036
NSN
5961-01-358-5036
743C4540-01-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013585036
NSN
5961-01-358-5036
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV INFORMATION SYSTEMS - GERMANTOWN
Description
III END ITEM IDENTIFICATION: PACER SPECIAL
Related Searches:
743C4540-01-030
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013585037
NSN
5961-01-358-5037
743C4540-01-030
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013585037
NSN
5961-01-358-5037
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV INFORMATION SYSTEMS - GERMANTOWN
Description
III END ITEM IDENTIFICATION: PACER SPECIAL
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52290001-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013585478
NSN
5961-01-358-5478
52290001-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013585478
NSN
5961-01-358-5478
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRMMAN NORDEN SYSTEMS DIV NAVAL AND MARINE SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
TX-KV950B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013585478
NSN
5961-01-358-5478
MFG
MYR ARTHUR B SHEET METAL INDUSTRIES INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
204-0073-011
TRANSISTOR
NSN, MFG P/N
5961013586107
NSN
5961-01-358-6107
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
CURRENT RATING PER CHARACTERISTIC: 0.10 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN