My Quote Request
5961-01-382-6757
20 Products
UF5408
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013826757
NSN
5961-01-382-6757
MFG
MIDDLETON ENTERPRISES INC DIV AERO TUBE & CONNECTOR DIV.
Description
III END ITEM IDENTIFICATION: LGM030G
SPECIAL FEATURES: FAST RECOVERY POWER RECTIFIER, 900 VOLTS, 3 AMP.
Related Searches:
9042817-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013824877
NSN
5961-01-382-4877
9042817-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013824877
NSN
5961-01-382-4877
MFG
DPA LABS INC. DBA DPA COMPONENTS INTERNATIONAL
Description
CRITICALITY CODE JUSTIFICATION: FEAT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR AND 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL LENGTH: 2.660 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SELECTED ITEM P/N JANTX1N4148-1 PER MIL-S-19500/116 AND REQUIREMENTS IN DRAWING NO.9042817 CAGE 98747:HCI
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 NOMINAL WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
014106-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013824936
NSN
5961-01-382-4936
014106-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013824936
NSN
5961-01-382-4936
MFG
SCI TECHNOLOGY INC. DIV DEFENSE AND AEROSPACE SYSTEMS
Description
III END ITEM IDENTIFICATION: PACER DAWN
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 2.260 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
446063-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013824936
NSN
5961-01-382-4936
446063-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013824936
NSN
5961-01-382-4936
MFG
THALES ATM INC.
Description
III END ITEM IDENTIFICATION: PACER DAWN
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 2.260 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
MBR5825HX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013824936
NSN
5961-01-382-4936
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: PACER DAWN
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 2.260 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
295A6381P0002
TRANSISTOR
NSN, MFG P/N
5961013826237
NSN
5961-01-382-6237
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 39.00 MILLIAMPERES MINIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 45.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
INTERNAL CONFIGURATION: JUNCTION CONTACT
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: SEMICONDUCTOR TRANSISTOR DIE LOW NOISE
Related Searches:
NH295A6381P2
TRANSISTOR
NSN, MFG P/N
5961013826237
NSN
5961-01-382-6237
MFG
DLA LAND AND MARITIME
Description
CURRENT RATING PER CHARACTERISTIC: 39.00 MILLIAMPERES MINIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 45.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
INTERNAL CONFIGURATION: JUNCTION CONTACT
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: SEMICONDUCTOR TRANSISTOR DIE LOW NOISE
Related Searches:
BF992
TRANSISTOR
NSN, MFG P/N
5961013826253
NSN
5961-01-382-6253
MFG
PHILIPS SEMICONDUCTORS INC
Description
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 3.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL DRAIN TO SOURCE VOLTAGE
Related Searches:
SS-32589
TRANSISTOR
NSN, MFG P/N
5961013826253
NSN
5961-01-382-6253
MFG
THALES COMMUNICATIONS INC.
Description
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 3.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL DRAIN TO SOURCE VOLTAGE
Related Searches:
6116810-1
TRANSISTOR
NSN, MFG P/N
5961013826423
NSN
5961-01-382-6423
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
TRANSISTOR
Related Searches:
SJ4786H
TRANSISTOR
NSN, MFG P/N
5961013826423
NSN
5961-01-382-6423
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
2002827
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013826425
NSN
5961-01-382-6425
MFG
PHILADELPHIA GEAR CORPORATION DBA WESTECH DIV WESTERN REGIONAL SERVICE CENTER
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
600686-10Y
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013826425
NSN
5961-01-382-6425
600686-10Y
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013826425
NSN
5961-01-382-6425
MFG
RELIANCE ELECTRIC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
103-396-6727
TRANSISTOR
NSN, MFG P/N
5961013826755
NSN
5961-01-382-6755
MFG
L-3 COMMUNICATIONS CORPORATION DBA GLOBAL NETWORK SOLUTIONS DIV AYDIN COMMUNICATIONS DIVISION
Description
III END ITEM IDENTIFICATION: LGM030G
SPECIAL FEATURES: SILICON, PNP, TO-92.
Related Searches:
MPS6727
TRANSISTOR
NSN, MFG P/N
5961013826755
NSN
5961-01-382-6755
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: LGM030G
SPECIAL FEATURES: SILICON, PNP, TO-92.
Related Searches:
104-339-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013826757
NSN
5961-01-382-6757
104-339-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013826757
NSN
5961-01-382-6757
MFG
L-3 COMMUNICATIONS CORPORATION DBA GLOBAL NETWORK SOLUTIONS DIV AYDIN COMMUNICATIONS DIVISION
Description
III END ITEM IDENTIFICATION: LGM030G
SPECIAL FEATURES: FAST RECOVERY POWER RECTIFIER, 900 VOLTS, 3 AMP.
Related Searches:
264-311
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013826757
NSN
5961-01-382-6757
MFG
RADIOSPARES SAS
Description
III END ITEM IDENTIFICATION: LGM030G
SPECIAL FEATURES: FAST RECOVERY POWER RECTIFIER, 900 VOLTS, 3 AMP.
Related Searches:
MUR450
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013826757
NSN
5961-01-382-6757
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: LGM030G
SPECIAL FEATURES: FAST RECOVERY POWER RECTIFIER, 900 VOLTS, 3 AMP.
Related Searches:
MUR490E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013826757
NSN
5961-01-382-6757
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
III END ITEM IDENTIFICATION: LGM030G
SPECIAL FEATURES: FAST RECOVERY POWER RECTIFIER, 900 VOLTS, 3 AMP.
Related Searches:
UF5405
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013826757
NSN
5961-01-382-6757
MFG
GENERAL SEMICONDUCTOR INC
Description
III END ITEM IDENTIFICATION: LGM030G
SPECIAL FEATURES: FAST RECOVERY POWER RECTIFIER, 900 VOLTS, 3 AMP.