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5961-01-336-5485
20 Products
SD215DE/M
TRANSISTOR
NSN, MFG P/N
5961013365485
NSN
5961-01-336-5485
MFG
SEMI PROCESSES INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: BURN IN
III END ITEM IDENTIFICATION: 5841-01-236-8951 DETECTING SET,RADAR SIGNAL
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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BUX84
TRANSISTOR
NSN, MFG P/N
5961013362045
NSN
5961-01-336-2045
MFG
THALES COMPONENTS CORPORATION
Description
TRANSISTOR
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BYV32-200
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013362046
NSN
5961-01-336-2046
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
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356A1351P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013362440
NSN
5961-01-336-2440
356A1351P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013362440
NSN
5961-01-336-2440
MFG
BAE SYSTEMS CONTROLS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 760.0 MAXIMUM FORWARD VOLTAGE, DC
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MBR2545CT
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013362440
NSN
5961-01-336-2440
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 760.0 MAXIMUM FORWARD VOLTAGE, DC
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7573082-011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013363040
NSN
5961-01-336-3040
7573082-011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013363040
NSN
5961-01-336-3040
MFG
GENERAL DYNAMICS LAND SYSTEMS INC . DBA WOODBRIDGE TECHNICAL CENTER DIV GENERAL DYNAMICS LAND SYSTEMS INC-WOODBRIDGE TECHNICAL CENTE
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: AC-130U TGMS/ASHS
SPECIAL FEATURES: ELECTROSTATIC SENSITIVE DEVICE
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6082-1034
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013363718
NSN
5961-01-336-3718
MFG
GENRAD INC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MINIMUM BREAKDOWN VOLTAGE, DC
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QSCH-1691
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013363718
NSN
5961-01-336-3718
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MINIMUM BREAKDOWN VOLTAGE, DC
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RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013364286
NSN
5961-01-336-4286
SC3BJ05F
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013364286
NSN
5961-01-336-4286
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
RECTIFIER,SEMICONDUCTOR DEVICE
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CD860
TRANSISTOR
NSN, MFG P/N
5961013364447
NSN
5961-01-336-4447
MFG
TELCOM SEMICONDUCTOR INC
Description
TRANSISTOR
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200926-002
TRANSISTOR
NSN, MFG P/N
5961013364448
NSN
5961-01-336-4448
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
TRANSISTOR
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12043-0159
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013364449
NSN
5961-01-336-4449
12043-0159
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013364449
NSN
5961-01-336-4449
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
SEMICONDUCTOR DEVICE,DIODE
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UF5400
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013364450
NSN
5961-01-336-4450
MFG
GENERAL SEMICONDUCTOR INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N5955B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013364451
NSN
5961-01-336-4451
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
768959-2
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013364526
NSN
5961-01-336-4526
768959-2
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013364526
NSN
5961-01-336-4526
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
RETAINER,SEMICONDUCTOR DEVICE
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MG1341
TRANSISTOR
NSN, MFG P/N
5961013364818
NSN
5961-01-336-4818
MFG
MICROSEMI CORPORATION
Description
III END ITEM IDENTIFICATION: SIMULATOR,AIRCRAFT,MODEL F/A-18 OFT
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A3084172
TRANSISTOR
NSN, MFG P/N
5961013365485
NSN
5961-01-336-5485
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: BURN IN
III END ITEM IDENTIFICATION: 5841-01-236-8951 DETECTING SET,RADAR SIGNAL
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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DM1183
TRANSISTOR
NSN, MFG P/N
5961013365485
NSN
5961-01-336-5485
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: BURN IN
III END ITEM IDENTIFICATION: 5841-01-236-8951 DETECTING SET,RADAR SIGNAL
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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SD215DE-M
TRANSISTOR
NSN, MFG P/N
5961013365485
NSN
5961-01-336-5485
MFG
CALOGIC LLC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: BURN IN
III END ITEM IDENTIFICATION: 5841-01-236-8951 DETECTING SET,RADAR SIGNAL
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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SD215DE-M/2
TRANSISTOR
NSN, MFG P/N
5961013365485
NSN
5961-01-336-5485
MFG
UNIVERSAL SEMICONDUCTOR INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: BURN IN
III END ITEM IDENTIFICATION: 5841-01-236-8951 DETECTING SET,RADAR SIGNAL
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE