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5961-01-389-3076
20 Products
FBL-00-245
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013893076
NSN
5961-01-389-3076
FBL-00-245
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013893076
NSN
5961-01-389-3076
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
310032
TRANSISTOR
NSN, MFG P/N
5961013889580
NSN
5961-01-388-9580
MFG
DATRON WORLD COMMUNICATIONS INC.
Description
TRANSISTOR
Related Searches:
2N5317
TRANSISTOR
NSN, MFG P/N
5961013889600
NSN
5961-01-388-9600
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
POWER RATING PER CHARACTERISTIC: 50.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
446065-0004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013890202
NSN
5961-01-389-0202
446065-0004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013890202
NSN
5961-01-389-0202
MFG
THALES ATM INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
7136226-1
TRANSISTOR
NSN, MFG P/N
5961013890258
NSN
5961-01-389-0258
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PACER DAWN
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ESD
TERMINAL TYPE AND QUANTITY: 14 TAB W/WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM DRAIN TO GATE VOLTAGE
Related Searches:
BAT51
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013891078
NSN
5961-01-389-1078
MFG
SPACE POWER ELECTRONICS INC
Description
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 18.67 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.05 NOMINAL FORWARD VOLTAGE, DC AND 0.05 NOMINAL REVERSE VOLTAGE, DC
Related Searches:
2SD1134
TRANSISTOR
NSN, MFG P/N
5961013891480
NSN
5961-01-389-1480
MFG
SONY ELECTRONICS INC NATIONAL PARTS CENTER
Description
TRANSISTOR
Related Searches:
8-729-313-42
TRANSISTOR
NSN, MFG P/N
5961013891480
NSN
5961-01-389-1480
MFG
SONY CORPORATION
Description
TRANSISTOR
Related Searches:
1.5KE130A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013891485
NSN
5961-01-389-1485
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.370 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 179.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
1683-191
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013891485
NSN
5961-01-389-1485
MFG
WOODWARD GOVERNOR COMPANY DBA INDUSTRIAL PRODUCTS GROUP DIV INDUSTRIAL PRODUCTS GROUP
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.370 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 179.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
1N6298A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013891485
NSN
5961-01-389-1485
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.370 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 179.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
1N4076
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013891487
NSN
5961-01-389-1487
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.750 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 91.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
059014
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013891558
NSN
5961-01-389-1558
MFG
DATRON WORLD COMMUNICATIONS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
352-1654-010
TRANSISTOR
NSN, MFG P/N
5961013892420
NSN
5961-01-389-2420
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PACER DAWN
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.790 INCHES MINIMUM AND 0.815 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ESD
TERMINAL TYPE AND QUANTITY: UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 22.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
80180
TRANSISTOR
NSN, MFG P/N
5961013892420
NSN
5961-01-389-2420
MFG
MICROSEMI CORP.-RF POWER PRODUCTS DIV MICROSEMI CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PACER DAWN
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.790 INCHES MINIMUM AND 0.815 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ESD
TERMINAL TYPE AND QUANTITY: UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 22.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
RF3065
TRANSISTOR
NSN, MFG P/N
5961013892420
NSN
5961-01-389-2420
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PACER DAWN
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.790 INCHES MINIMUM AND 0.815 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ESD
TERMINAL TYPE AND QUANTITY: UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 22.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
9033D28-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013892433
NSN
5961-01-389-2433
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
III END ITEM IDENTIFICATION: PACER DAWN
Related Searches:
FBL-00-283
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013892979
NSN
5961-01-389-2979
FBL-00-283
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013892979
NSN
5961-01-389-2979
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
FBL-00-287
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013893010
NSN
5961-01-389-3010
FBL-00-287
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013893010
NSN
5961-01-389-3010
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
FBM-Z237
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013893031
NSN
5961-01-389-3031
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
SEMICONDUCTOR DEVICE,DIODE