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5961-01-391-3735
20 Products
PRD3099
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013913735
NSN
5961-01-391-3735
PRD3099
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013913735
NSN
5961-01-391-3735
MFG
OPTEK TECHNOLOGY INC
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 400.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL AREAS IAW MIL-STD-2000 PARA. 5.4.17.2 GOLD
INCLOSURE MATERIAL: CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-254AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.560 INCHES MAXIMUM
OVERALL LENGTH: 0.990 INCHES MAXIMUM
OVERALL WIDTH: 0.545 INCHES MAXIMUM
RESPONSE TIME: 35.0 NANOSECONDS MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 35351-171280 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
11637-10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013913740
NSN
5961-01-391-3740
MFG
AVO INTL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0000-6884-48
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013913757
NSN
5961-01-391-3757
0000-6884-48
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013913757
NSN
5961-01-391-3757
MFG
HILL ROSS CONTROLS CORP
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
Related Searches:
MB3510
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013913757
NSN
5961-01-391-3757
MB3510
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013913757
NSN
5961-01-391-3757
MFG
DIODES INC POWER COMPONENTS DIV
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
Related Searches:
687-8564-001
BRACKET,TRANSISTOR
NSN, MFG P/N
5961013913806
NSN
5961-01-391-3806
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
III END ITEM IDENTIFICATION: PACER DAWN
SPECIAL FEATURES: PLASTIC, ACETAL RESIN, BLACK
Related Searches:
687-4441-002
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013914099
NSN
5961-01-391-4099
687-4441-002
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013914099
NSN
5961-01-391-4099
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
III END ITEM IDENTIFICATION: PACER DAWN
Related Searches:
IRF532
TRANSISTOR
NSN, MFG P/N
5961013914438
NSN
5961-01-391-4438
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
TRANSISTOR
Related Searches:
MTH20P08
TRANSISTOR
NSN, MFG P/N
5961013914441
NSN
5961-01-391-4441
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
P6KE10A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013914443
NSN
5961-01-391-4443
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: DISK DRIVE, RSD 80, CAE ELECTRONICS GMBH
Related Searches:
IRF9240
TRANSISTOR
NSN, MFG P/N
5961013914695
NSN
5961-01-391-4695
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: -11.00 AMPERES MAXIMUM DRAIN CURRENT AND -44.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AA
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.330 INCHES MAXIMUM
OVERALL LENGTH: 1.544 INCHES MAXIMUM
OVERALL WIDTH: 1.016 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
100H143PC92
TRANSISTOR
NSN, MFG P/N
5961013914813
NSN
5961-01-391-4813
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ES POWER CONTROL SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 4A11702H01
MANUFACTURERS CODE: 04804
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
100H107PC136
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013914889
NSN
5961-01-391-4889
100H107PC136
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013914889
NSN
5961-01-391-4889
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ES POWER CONTROL SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 3A62064H01
MANUFACTURERS CODE: 04804
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
2830688-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013915008
NSN
5961-01-391-5008
2830688-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013915008
NSN
5961-01-391-5008
MFG
RAYTHEON COMPANY
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
632218-03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013915370
NSN
5961-01-391-5370
MFG
BAE SYSTEMS CONTROLS INC
Description
III END ITEM IDENTIFICATION: PACER DAWN
INCLOSURE MATERIAL: CERAMIC OR GLASS
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 560.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
S2218-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013915370
NSN
5961-01-391-5370
MFG
SOLID STATE DEVICES INC.
Description
III END ITEM IDENTIFICATION: PACER DAWN
INCLOSURE MATERIAL: CERAMIC OR GLASS
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 560.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
171285-04
TRANSISTOR
NSN, MFG P/N
5961013915648
NSN
5961-01-391-5648
MFG
GE AVIATION SYSTEMS LLC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
JANTXV2N7225
TRANSISTOR
NSN, MFG P/N
5961013915648
NSN
5961-01-391-5648
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
151-0935-00
TRANSISTOR
NSN, MFG P/N
5961013915652
NSN
5961-01-391-5652
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.772 INCHES NOMINAL
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
TERMINAL CIRCLE DIAMETER: 0.024 INCHES MINIMUM AND 0.031 INCHES MAXIMUM
TERMINAL LENGTH: 0.480 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 300.0 MAXIMUM COLLECTOR-TO-EMITTER SUBSTAINING VOLTAGE, RESISTANCE BETWEEN BASE AND EMITTER AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
2N6770-002
TRANSISTOR
NSN, MFG P/N
5961013915658
NSN
5961-01-391-5658
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
6196605-002
TRANSISTOR
NSN, MFG P/N
5961013915658
NSN
5961-01-391-5658
MFG
NAVAL SEA SYSTEMS COMMAND
Description
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON