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5961-01-415-6540

20 Products

SD1530-2

TRANSISTOR

NSN, MFG P/N

5961014156540

NSN

5961-01-415-6540

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SD1530-2

TRANSISTOR

NSN, MFG P/N

5961014156540

NSN

5961-01-415-6540

MFG

STMICROELECTRONICS INC

Description

INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 65.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

FRL9130D1

TRANSISTOR

NSN, MFG P/N

5961014154355

NSN

5961-01-415-4355

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FRL9130D1

TRANSISTOR

NSN, MFG P/N

5961014154355

NSN

5961-01-415-4355

MFG

INTERSIL CORPORATION

FRM450D1

TRANSISTOR

NSN, MFG P/N

5961014154377

NSN

5961-01-415-4377

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FRM450D1

TRANSISTOR

NSN, MFG P/N

5961014154377

NSN

5961-01-415-4377

MFG

INTERSIL CORPORATION

JANTX1N4126

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014154575

NSN

5961-01-415-4575

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JANTX1N4126

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014154575

NSN

5961-01-415-4575

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 127.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4126-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 51.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

1347H71-79

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014154790

NSN

5961-01-415-4790

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1347H71-79

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014154790

NSN

5961-01-415-4790

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ES POWER CONTROL SYSTEMS

1347H71-78

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014154792

NSN

5961-01-415-4792

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1347H71-78

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014154792

NSN

5961-01-415-4792

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ES POWER CONTROL SYSTEMS

SD1528-2

TRANSISTOR

NSN, MFG P/N

5961014155080

NSN

5961-01-415-5080

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SD1528-2

TRANSISTOR

NSN, MFG P/N

5961014155080

NSN

5961-01-415-5080

MFG

STMICROELECTRONICS INC

Description

INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 65.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

SG6387

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014155088

NSN

5961-01-415-5088

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SG6387

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014155088

NSN

5961-01-415-5088

MFG

SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY

9999-43730-2

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014155524

NSN

5961-01-415-5524

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9999-43730-2

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014155524

NSN

5961-01-415-5524

MFG

ENGINE MONITOR INC. DBA E M I

Description

DESIGN CONTROL REFERENCE: 9999-43730-2
III END ITEM IDENTIFICATION: WLB STATUS PANEL, MAIN
MAJOR COMPONENTS: DIODE 3, TERMINAL BLOCK 2, PRINTED CIRCUIT BOARD 1
MANUFACTURERS CODE: 63544
OVERALL LENGTH: 2.300 INCHES NOMINAL
OVERALL WIDTH: 1.350 INCHES NOMINAL
SPECIAL FEATURES: DESIGNED FOR NEGATIVE COMMON CIRCUIT
THE MANUFACTURERS DATA:

8510592-430

TRANSISTOR

NSN, MFG P/N

5961014155610

NSN

5961-01-415-5610

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8510592-430

TRANSISTOR

NSN, MFG P/N

5961014155610

NSN

5961-01-415-5610

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE

Description

INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.460 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 90.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

PP8388

TRANSISTOR

NSN, MFG P/N

5961014155610

NSN

5961-01-415-5610

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PP8388

TRANSISTOR

NSN, MFG P/N

5961014155610

NSN

5961-01-415-5610

MFG

MICROSEMI PPC INC

Description

INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.460 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 90.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

PST1307

TRANSISTOR

NSN, MFG P/N

5961014155610

NSN

5961-01-415-5610

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PST1307

TRANSISTOR

NSN, MFG P/N

5961014155610

NSN

5961-01-415-5610

MFG

OPTEK TECHNOLOGY INC

Description

INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.460 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 90.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

1219341-201

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014155657

NSN

5961-01-415-5657

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1219341-201

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014155657

NSN

5961-01-415-5657

MFG

LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS

Description

III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS/LEADS GOLD
INCLOSURE MATERIAL: CERAMIC OR GLASS OR PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

DKV6520-128

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014155657

NSN

5961-01-415-5657

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DKV6520-128

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014155657

NSN

5961-01-415-5657

MFG

SKYWORKS SOLUTIONS INC.

Description

III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS/LEADS GOLD
INCLOSURE MATERIAL: CERAMIC OR GLASS OR PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

8514430-349

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014155670

NSN

5961-01-415-5670

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8514430-349

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014155670

NSN

5961-01-415-5670

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE

SFX430-349

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014155670

NSN

5961-01-415-5670

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SFX430-349

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014155670

NSN

5961-01-415-5670

MFG

SOLID STATE DEVICES INC.

SPF1015

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014155670

NSN

5961-01-415-5670

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SPF1015

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014155670

NSN

5961-01-415-5670

MFG

SILICON TRANSISTOR CORP SUB OF BBF INC

8514430-396

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014155671

NSN

5961-01-415-5671

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8514430-396

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014155671

NSN

5961-01-415-5671

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE

SFX430-396

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014155671

NSN

5961-01-415-5671

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SFX430-396

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014155671

NSN

5961-01-415-5671

MFG

SOLID STATE DEVICES INC.

SNF1062

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014155671

NSN

5961-01-415-5671

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SNF1062

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961014155671

NSN

5961-01-415-5671

MFG

SILICON TRANSISTOR CORP SUB OF BBF INC