My Quote Request
5961-01-450-0590
20 Products
MA44642A-30
DIODE ASSY
NSN, MFG P/N
5961014500590
NSN
5961-01-450-0590
MFG
MAGNETIC LABORATORIES INC
Description
III END ITEM IDENTIFICATION: F-16 RADAR
Related Searches:
FSA3224M
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014498798
NSN
5961-01-449-8798
FSA3224M
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014498798
NSN
5961-01-449-8798
MFG
FAIRCHILD SEMICONDUCTOR CORP COMPONENTS GROUP SUB OF SCHLUMBERGER LTD
Description
COMPONENT NAME AND QUANTITY: 8 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL TRANSISTOR
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6510
III END ITEM IDENTIFICATION: A/F-18-DCN
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/474
OVERALL HEIGHT: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.370 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
OVERALL WIDTH: 0.745 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/474 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC ALL TRANSISTOR
Related Searches:
JANTX1N6510
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014498798
NSN
5961-01-449-8798
JANTX1N6510
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014498798
NSN
5961-01-449-8798
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
COMPONENT NAME AND QUANTITY: 8 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL TRANSISTOR
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6510
III END ITEM IDENTIFICATION: A/F-18-DCN
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/474
OVERALL HEIGHT: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.370 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
OVERALL WIDTH: 0.745 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/474 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC ALL TRANSISTOR
Related Searches:
A3177261
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014498805
NSN
5961-01-449-8805
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FUNCTION FOR WHICH DESIGNED: SWITCHING
III END ITEM IDENTIFICATION: 5865-01-346-4772
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEMS
SPECIAL TEST FEATURES: SELECTED FOR MAXIMUM JUNCTION CAPACITANCE OF 2.0 PICOFARDS
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 75.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
JANTX1N4148-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014498805
NSN
5961-01-449-8805
JANTX1N4148-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014498805
NSN
5961-01-449-8805
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FUNCTION FOR WHICH DESIGNED: SWITCHING
III END ITEM IDENTIFICATION: 5865-01-346-4772
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEMS
SPECIAL TEST FEATURES: SELECTED FOR MAXIMUM JUNCTION CAPACITANCE OF 2.0 PICOFARDS
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 75.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
2N919
TRANSISTOR
NSN, MFG P/N
5961014499040
NSN
5961-01-449-9040
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
III END ITEM IDENTIFICATION: SATCOM EQUIPMENT, NATIONAL SEMICONDUCTOR CORP
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LOW FREQUENCY LOW POWER BJT; JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
357-0091-SO
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014499041
NSN
5961-01-449-9041
357-0091-SO
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014499041
NSN
5961-01-449-9041
MFG
ONAN CORPORATION DBA CUMMINS POWER GENERATION
Description
III END ITEM IDENTIFICATION: ELECTRICAL GROUP 45KW, ONAN CORP
Related Searches:
2SC643
TRANSISTOR
NSN, MFG P/N
5961014499042
NSN
5961-01-449-9042
MFG
KEPCO INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
III END ITEM IDENTIFICATION: SATCOM EQUIPMENT, NATIONAL SEMICONDUCTOR CORP
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LOW FREQUENCY POWER BJT; JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1100.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
2N6738
TRANSISTOR
NSN, MFG P/N
5961014499043
NSN
5961-01-449-9043
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
III END ITEM IDENTIFICATION: SATCOM EQUIPMENT, NATIONAL SEMICONDUCTOR CORP
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LOW FREQUENCY POWER BJT; JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
136623
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014499045
NSN
5961-01-449-9045
MFG
CARRIER CORPORATION DIV CARRIER TRANSICOLD DIVISION
Description
III END ITEM IDENTIFICATION: ENGINE DRIVEN UNIT 605, CARRIER TRANSICOLD CO
Related Searches:
2N4287
TRANSISTOR
NSN, MFG P/N
5961014499046
NSN
5961-01-449-9046
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
III END ITEM IDENTIFICATION: SATCOM EQUIPMENT, NATIONAL SEMICONDUCTOR CORP
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LOW FREQUENCY LOW POWER BJT; JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
12941512
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014499744
NSN
5961-01-449-9744
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
III END ITEM IDENTIFICATION: 2350010612445
INCLOSURE MATERIAL: PLASTIC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
DZ940818B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014499744
NSN
5961-01-449-9744
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
III END ITEM IDENTIFICATION: 2350010612445
INCLOSURE MATERIAL: PLASTIC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
150-25712
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014499747
NSN
5961-01-449-9747
MFG
QUARTZTEK INC
Description
III END ITEM IDENTIFICATION: E3-HAVEEQUIKAN E/I FSCM 59492
OVERALL LENGTH: 0.455 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
538665-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014499747
NSN
5961-01-449-9747
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: E3-HAVEEQUIKAN E/I FSCM 59492
OVERALL LENGTH: 0.455 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
SS-2400469-1
TRANSISTOR
NSN, MFG P/N
5961014499784
NSN
5961-01-449-9784
MFG
THALES COMMUNICATIONS INC.
Description
III END ITEM IDENTIFICATION: SCOPE SHIELD
Related Searches:
353-5361-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014500149
NSN
5961-01-450-0149
353-5361-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014500149
NSN
5961-01-450-0149
MFG
CONTINENTAL ELECTRONICS CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
134227-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014500369
NSN
5961-01-450-0369
MFG
ASTRONAUTICS CORPORATION OF AMERICA
Description
III END ITEM IDENTIFICATION: USED ON AIRCRAFT MULTIFUNCTION COCKPIT DISPLAY BEZEL/PHOTO DIODE W/WIRES AND HOLDER
Related Searches:
142-506
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014500500
NSN
5961-01-450-0500
142-506
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014500500
NSN
5961-01-450-0500
MFG
MILLER ELECTRIC MFG CO
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 350.00 AMPERES FORWARD CURRENT, DC
III END ITEM IDENTIFICATION: WELDER,BIG 40 DIESEL/ SERIAL : KD536837
SPECIAL FEATURES: SI 3PH
Related Searches:
AD420343G01
DIODE ASSY
NSN, MFG P/N
5961014500590
NSN
5961-01-450-0590
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ELECTRONIC SYSTEMS
Description
III END ITEM IDENTIFICATION: F-16 RADAR