My Quote Request
5962-01-236-1526
20 Products
M8340109K1001GG
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012361526
NSN
5962-01-236-1526
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/31605BEA
DESIGN FUNCTION AND QUANTITY: 1 LATCH, ADDRESSABLE
FEATURES PROVIDED: MONOLITHIC AND SCHOTTKY AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/316
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/316 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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SN74AS867NT
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012361157
NSN
5962-01-236-1157
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.250 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, UP/DOWN
FEATURES PROVIDED: MONOLITHIC AND SYNCHRONOUS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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07H06116
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012361158
NSN
5962-01-236-1158
MFG
HEKIMIAN LABORATORIES INC CUSTOMER SUPPORT DEPT
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 5.29 MILLIMETERS MAXIMUM
BODY LENGTH: 32.0 MILLIMETERS NOMINAL
BODY WIDTH: 13.4 MILLIMETERS NOMINAL
FEATURES PROVIDED: HIGH SPEED AND LOW POWER AND W/ENABLE AND STATIC OPERATION
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 22 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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HM6116P-4
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012361158
NSN
5962-01-236-1158
MFG
HITACHI AMERICA LTD. DIV POWER SYSTEMS
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 5.29 MILLIMETERS MAXIMUM
BODY LENGTH: 32.0 MILLIMETERS NOMINAL
BODY WIDTH: 13.4 MILLIMETERS NOMINAL
FEATURES PROVIDED: HIGH SPEED AND LOW POWER AND W/ENABLE AND STATIC OPERATION
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 22 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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FBT-00-102
INTEGRATED CIRCUIT
NSN, MFG P/N
5962012361405
NSN
5962-01-236-1405
MFG
SEMTECH CORPUS CHRISTI CORP
Description
INTEGRATED CIRCUIT
Related Searches:
FBT-00-137
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012361406
NSN
5962-01-236-1406
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
BODY HEIGHT: 0.165 INCHES MAXIMUM
BODY LENGTH: 0.210 INCHES MAXIMUM
BODY WIDTH: 0.205 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: TO-92 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 775.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
TEST DATA DOCUMENT: 80103-FBT-00-137 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 37.0 VOLTS MAXIMUM POWER SOURCE
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41704-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012361438
NSN
5962-01-236-1438
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.290 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM OUTPUT SINK
FEATURES PROVIDED: HIGH IMPEDANCE AND MONOLITHIC AND PROGRAMMED AND BIPOLAR AND SCHOTTKY
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
III OVERALL LENGTH: 0.840 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
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5962-3820701BEA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012361438
NSN
5962-01-236-1438
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.290 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM OUTPUT SINK
FEATURES PROVIDED: HIGH IMPEDANCE AND MONOLITHIC AND PROGRAMMED AND BIPOLAR AND SCHOTTKY
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
III OVERALL LENGTH: 0.840 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/20701BEA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012361438
NSN
5962-01-236-1438
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.290 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM OUTPUT SINK
FEATURES PROVIDED: HIGH IMPEDANCE AND MONOLITHIC AND PROGRAMMED AND BIPOLAR AND SCHOTTKY
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
III OVERALL LENGTH: 0.840 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012361438
NSN
5962-01-236-1438
ROM/PROM FAMILY 022
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012361438
NSN
5962-01-236-1438
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.290 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM OUTPUT SINK
FEATURES PROVIDED: HIGH IMPEDANCE AND MONOLITHIC AND PROGRAMMED AND BIPOLAR AND SCHOTTKY
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
III OVERALL LENGTH: 0.840 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
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LM140AK-15
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012361517
NSN
5962-01-236-1517
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.450 INCHES MAXIMUM
BODY LENGTH: 1.573 INCHES MAXIMUM
BODY WIDTH: 1.050 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: TO-3 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND FIXED AND THERMAL OVERLOAD PROTECTION AND BURN IN
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 20.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 35.0 VOLTS MAXIMUM POWER SOURCE
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A398A374T2282
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012361520
NSN
5962-01-236-1520
MFG
KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.400 INCHES MAXIMUM
BODY WIDTH: 0.385 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 935.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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A574A574-101
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012361520
NSN
5962-01-236-1520
MFG
KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.400 INCHES MAXIMUM
BODY WIDTH: 0.385 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 935.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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A574A575-2282
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012361520
NSN
5962-01-236-1520
MFG
KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.400 INCHES MAXIMUM
BODY WIDTH: 0.385 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 935.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012361521
NSN
5962-01-236-1521
MFG
KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.400 INCHES MAXIMUM
BODY WIDTH: 0.385 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 935.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012361521
NSN
5962-01-236-1521
MFG
KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.400 INCHES MAXIMUM
BODY WIDTH: 0.385 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 935.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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A574A575-2272
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012361521
NSN
5962-01-236-1521
MFG
KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.400 INCHES MAXIMUM
BODY WIDTH: 0.385 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 935.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/31605BEA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012361526
NSN
5962-01-236-1526
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/31605BEA
DESIGN FUNCTION AND QUANTITY: 1 LATCH, ADDRESSABLE
FEATURES PROVIDED: MONOLITHIC AND SCHOTTKY AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/316
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/316 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/31605BEB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012361526
NSN
5962-01-236-1526
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/31605BEA
DESIGN FUNCTION AND QUANTITY: 1 LATCH, ADDRESSABLE
FEATURES PROVIDED: MONOLITHIC AND SCHOTTKY AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/316
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/316 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/31605BEX
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012361526
NSN
5962-01-236-1526
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/31605BEA
DESIGN FUNCTION AND QUANTITY: 1 LATCH, ADDRESSABLE
FEATURES PROVIDED: MONOLITHIC AND SCHOTTKY AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/316
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/316 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE