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5962-01-392-9576

20 Products

AD7576BQ

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013929576

NSN

5962-01-392-9576

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AD7576BQ

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013929576

NSN

5962-01-392-9576

MFG

ANALOG DEVICES INC. DIV CORPORATE HEADQUARTERS

Description

INCLOSURE CONFIGURATION: DUAL-IN-LINE
OPERATING TEMP RANGE: -25.0 TO 85.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 18 PIN

263-497

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013929641

NSN

5962-01-392-9641

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263-497

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013929641

NSN

5962-01-392-9641

MFG

RS COMPONENTS LIMITED

Description

DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
TERMINAL TYPE AND QUANTITY: 16 PIN

3373-1010

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013929641

NSN

5962-01-392-9641

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3373-1010

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013929641

NSN

5962-01-392-9641

MFG

SELEX GALILEO LTD

Description

DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
TERMINAL TYPE AND QUANTITY: 16 PIN

IS0122P

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013929641

NSN

5962-01-392-9641

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IS0122P

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013929641

NSN

5962-01-392-9641

MFG

FARNELL ELECTRONIC COMPONENTS LTD

Description

DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
TERMINAL TYPE AND QUANTITY: 16 PIN

ISO122P

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013929641

NSN

5962-01-392-9641

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ISO122P

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013929641

NSN

5962-01-392-9641

MFG

BURR-BROWN CORP

Description

DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
TERMINAL TYPE AND QUANTITY: 16 PIN

NMC27C512AQM150

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013929644

NSN

5962-01-392-9644

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NMC27C512AQM150

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013929644

NSN

5962-01-392-9644

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: EPROM
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL TYPE AND QUANTITY: 28 PIN

MPY100SG

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013929645

NSN

5962-01-392-9645

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MPY100SG

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013929645

NSN

5962-01-392-9645

MFG

BURR-BROWN CORP

Description

DESIGN FUNCTION AND QUANTITY: 1 CONDITIONER, SIGNAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
TERMINAL TYPE AND QUANTITY: 14 PIN

54LS02/RBDQ

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013929651

NSN

5962-01-392-9651

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54LS02/RBDQ

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013929651

NSN

5962-01-392-9651

MFG

FREESCALE SEMICONDUCTOR INC.

Description

DESIGN FUNCTION AND QUANTITY: 1 GATE, NOR
III END ITEM IDENTIFICATION: TORNADO, DISPLAY UNIT, PILOTS; 454SUM3; PANAVIA AIRCRAFT GMBH
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: 2 INPUT
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL TYPE AND QUANTITY: 14 PIN

51096-0219

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013929829

NSN

5962-01-392-9829

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51096-0219

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013929829

NSN

5962-01-392-9829

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
MEMORY DEVICE TYPE: PROM

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013929829

NSN

5962-01-392-9829

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013929829

NSN

5962-01-392-9829

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
MEMORY DEVICE TYPE: PROM

5962-8769001RA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013929837

NSN

5962-01-392-9837

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5962-8769001RA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013929837

NSN

5962-01-392-9837

MFG

DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

G526834-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013929837

NSN

5962-01-392-9837

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G526834-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013929837

NSN

5962-01-392-9837

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013929837

NSN

5962-01-392-9837

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013929837

NSN

5962-01-392-9837

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

2819694-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013929906

NSN

5962-01-392-9906

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2819694-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013929906

NSN

5962-01-392-9906

MFG

HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

5962-8515508RA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013929906

NSN

5962-01-392-9906

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5962-8515508RA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013929906

NSN

5962-01-392-9906

MFG

DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013929906

NSN

5962-01-392-9906

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013929906

NSN

5962-01-392-9906

MFG

DLA LAND AND MARITIME

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

2819695-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013929907

NSN

5962-01-392-9907

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2819695-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013929907

NSN

5962-01-392-9907

MFG

HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

5962-8515508RA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013929907

NSN

5962-01-392-9907

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5962-8515508RA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013929907

NSN

5962-01-392-9907

MFG

DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013929907

NSN

5962-01-392-9907

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013929907

NSN

5962-01-392-9907

MFG

DLA LAND AND MARITIME

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

CY7C291A-25WMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013929917

NSN

5962-01-392-9917

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CY7C291A-25WMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013929917

NSN

5962-01-392-9917

MFG

CYPRESS SEMICONDUCTOR CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 16384
FEATURES PROVIDED: PROGRAMMABLE
HYBRID TECHNOLOGY TYPE: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: 2048 X 8 PROM
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM APPLIED AND 7.0 VOLTS MAXIMUM APPLIED