My Quote Request
5962-01-236-3707
20 Products
ROM/PROM
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012363707
NSN
5962-01-236-3707
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: BIPOLAR AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVE
Related Searches:
GEM28620BKA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012363707
NSN
5962-01-236-3707
MFG
SARNOFF CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: BIPOLAR AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVE
Related Searches:
647346-902
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012363710
NSN
5962-01-236-3710
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: RADIATION HARDENED AND ELECTROSTATIC SENSITIVE AND STATIC OPERATION
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVE AND NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
84-32992-001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012363710
NSN
5962-01-236-3710
MFG
RAYTHEON E-SYSTEMS INC
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: RADIATION HARDENED AND ELECTROSTATIC SENSITIVE AND STATIC OPERATION
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVE AND NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
CY7C128-55DMB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012363710
NSN
5962-01-236-3710
MFG
CYPRESS SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: RADIATION HARDENED AND ELECTROSTATIC SENSITIVE AND STATIC OPERATION
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVE AND NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
84-30504-001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012363711
NSN
5962-01-236-3711
MFG
RAYTHEON E-SYSTEMS INC
Description
(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND RADIATION HARDENED AND SELECTED ITEM AND ERASABLE
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVE AND NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
74F257APC
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012363714
NSN
5962-01-236-3714
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 MULTIPLEXER
FEATURES PROVIDED: MONOLITHIC AND 3-STATE OUTPUT AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 8 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
74F257PC
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012363714
NSN
5962-01-236-3714
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 MULTIPLEXER
FEATURES PROVIDED: MONOLITHIC AND 3-STATE OUTPUT AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 8 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
99123605
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012363714
NSN
5962-01-236-3714
MFG
THALES
Description
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 MULTIPLEXER
FEATURES PROVIDED: MONOLITHIC AND 3-STATE OUTPUT AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 8 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
15-1319481-011
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012363716
NSN
5962-01-236-3716
MFG
GTE GOVERNMENT SYSTEMS CORP STRATEGIC SYSTEMS DIV
Description
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN FUNCTION AND QUANTITY: 8 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: MONOLITHIC AND 3-STATE OUTPUT AND LOW POWER AND SCHOTTKY AND RADIATION HARDENED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 8 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
SMXLS374J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012363716
NSN
5962-01-236-3716
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN FUNCTION AND QUANTITY: 8 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: MONOLITHIC AND 3-STATE OUTPUT AND LOW POWER AND SCHOTTKY AND RADIATION HARDENED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 8 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
15-1345324-011
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012363718
NSN
5962-01-236-3718
MFG
GTE GOVERNMENT SYSTEMS CORP STRATEGIC SYSTEMS DIV
Description
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND LOW POWER AND SCHOTTKY AND RADIATION HARDENED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
CC7021F
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012363718
NSN
5962-01-236-3718
MFG
PHILIPS SEMICONDUCTORS INC
Description
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND LOW POWER AND SCHOTTKY AND RADIATION HARDENED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
2100400-000
MICROCIRCUIT SET
NSN, MFG P/N
5962012363886
NSN
5962-01-236-3886
MFG
DNE TECHNOLOGIES INC.
Description
COMPONENT FUNCTION RELATIONSHIP: UNMATCHED
Related Searches:
41705-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012364115
NSN
5962-01-236-4115
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 8
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 9 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
722916-5
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012364115
NSN
5962-01-236-4115
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 8
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 9 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
722916-50
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012364115
NSN
5962-01-236-4115
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 8
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 9 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012364115
NSN
5962-01-236-4115
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 8
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 9 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN54S188J
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012364115
NSN
5962-01-236-4115
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 8
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 9 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
54F04/BCXJC
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012364117
NSN
5962-01-236-4117
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.140 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 6 INVERTER
FEATURES PROVIDED: LOW POWER AND SCHOTTKY AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 85.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 7.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 6.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE