My Quote Request
5962-01-263-4007
20 Products
ROM/PROM FAMILY 188
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012634007
NSN
5962-01-263-4007
ROM/PROM FAMILY 188
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012634007
NSN
5962-01-263-4007
MFG
DLA LAND AND MARITIME
Description
FEATURES PROVIDED: PROGRAMMABLE AND MONOLITHIC
INCLOSURE MATERIAL: CERAMIC OR METAL OR GLASS OR PLASTIC
MEMORY DEVICE TYPE: ROM
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012633545
NSN
5962-01-263-3545
MFG
CYPRESS SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 64
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.968 INCHES NOMINAL
BODY OUTSIDE DIAMETER: 0.311 INCHES NOMINAL
BODY WIDTH: 0.285 INCHES NOMINAL
CURRENT RATING PER CHARACTERISTIC: 160.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: ASYNCHRONOUS AND EXPANDABLE AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: FIRST-IN FIRST-OUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
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13038588-012
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012633631
NSN
5962-01-263-3631
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
MICROCIRCUIT,DIGITAL
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13038588-013
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012633632
NSN
5962-01-263-3632
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
MICROCIRCUIT,DIGITAL
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C4749
MICROCIRCUIT
NSN, MFG P/N
5962012633740
NSN
5962-01-263-3740
MFG
HOWELL INSTRUMENTS INC .
Description
MICROCIRCUIT
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C4748
MICROCIRCUIT
NSN, MFG P/N
5962012633742
NSN
5962-01-263-3742
MFG
HOWELL INSTRUMENTS INC .
Description
MICROCIRCUIT
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MICROCIRCUIT
NSN, MFG P/N
5962012633742
NSN
5962-01-263-3742
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
MICROCIRCUIT
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MICROCIRCUIT
NSN, MFG P/N
5962012633742
NSN
5962-01-263-3742
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
MICROCIRCUIT
Related Searches:
C4616
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012633743
NSN
5962-01-263-3743
MFG
HOWELL INSTRUMENTS INC .
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, EDGE TRIGGERED, D-TYPE
FEATURES PROVIDED: MONOLITHIC AND W/PRESET AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012633743
NSN
5962-01-263-3743
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, EDGE TRIGGERED, D-TYPE
FEATURES PROVIDED: MONOLITHIC AND W/PRESET AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012633743
NSN
5962-01-263-3743
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, EDGE TRIGGERED, D-TYPE
FEATURES PROVIDED: MONOLITHIC AND W/PRESET AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012633786
NSN
5962-01-263-3786
MFG
INTERSIL INC SUB OF GENERAL ELECTRIC CO
Description
MICROCIRCUIT,LINEAR
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012633786
NSN
5962-01-263-3786
MFG
QUALIMETRICS INC
Description
MICROCIRCUIT,LINEAR
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012633787
NSN
5962-01-263-3787
MFG
INTERSIL INC SUB OF GENERAL ELECTRIC CO
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.376 INCHES MINIMUM AND 0.384 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.271 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: PROGRAMMABLE AND LOW POWER AND TEMPERATURE COMPENSATED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TERMINAL TYPE AND QUANTITY: 8 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012633787
NSN
5962-01-263-3787
MFG
INTERSIL INC SUB OF GENERAL ELECTRIC CO
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.376 INCHES MINIMUM AND 0.384 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.271 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: PROGRAMMABLE AND LOW POWER AND TEMPERATURE COMPENSATED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TERMINAL TYPE AND QUANTITY: 8 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE
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340928-0306
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012634006
NSN
5962-01-263-4006
MFG
NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV
Description
FEATURES PROVIDED: PROGRAMMABLE AND MONOLITHIC
INCLOSURE MATERIAL: CERAMIC OR METAL OR GLASS OR PLASTIC
MEMORY DEVICE TYPE: ROM
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340939
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012634006
NSN
5962-01-263-4006
MFG
NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV
Description
FEATURES PROVIDED: PROGRAMMABLE AND MONOLITHIC
INCLOSURE MATERIAL: CERAMIC OR METAL OR GLASS OR PLASTIC
MEMORY DEVICE TYPE: ROM
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012634006
NSN
5962-01-263-4006
MFG
DLA LAND AND MARITIME
Description
FEATURES PROVIDED: PROGRAMMABLE AND MONOLITHIC
INCLOSURE MATERIAL: CERAMIC OR METAL OR GLASS OR PLASTIC
MEMORY DEVICE TYPE: ROM
Related Searches:
340928-0206
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012634007
NSN
5962-01-263-4007
MFG
NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV
Description
FEATURES PROVIDED: PROGRAMMABLE AND MONOLITHIC
INCLOSURE MATERIAL: CERAMIC OR METAL OR GLASS OR PLASTIC
MEMORY DEVICE TYPE: ROM
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340939
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012634007
NSN
5962-01-263-4007
MFG
NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV
Description
FEATURES PROVIDED: PROGRAMMABLE AND MONOLITHIC
INCLOSURE MATERIAL: CERAMIC OR METAL OR GLASS OR PLASTIC
MEMORY DEVICE TYPE: ROM