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5962-01-345-2681

20 Products

SNJ54ALS632AJD

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013452681

NSN

5962-01-345-2681

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SNJ54ALS632AJD

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013452681

NSN

5962-01-345-2681

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

(NON-CORE DATA) BIT QUANTITY: 32
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 2.650 INCHES MAXIMUM
BODY WIDTH: 0.590 INCHES MINIMUM AND 0.620 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 BUFFER AND 2 DECODER AND 1 DETECTOR AND 1 LATCH
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC
HYBRID TECHNOLOGY TYPE: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 37 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT,DIGITAL-ERROR DETECTION AND CORRECTION CIRCUIT
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 52 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

28116680

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013452681

NSN

5962-01-345-2681

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28116680

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013452681

NSN

5962-01-345-2681

MFG

GLOBAL ASSOCIATES LTD SIGNAL PROCESSING SYSTEMS

Description

(NON-CORE DATA) BIT QUANTITY: 32
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 2.650 INCHES MAXIMUM
BODY WIDTH: 0.590 INCHES MINIMUM AND 0.620 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 BUFFER AND 2 DECODER AND 1 DETECTOR AND 1 LATCH
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC
HYBRID TECHNOLOGY TYPE: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 37 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT,DIGITAL-ERROR DETECTION AND CORRECTION CIRCUIT
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 52 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

7916884-05

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013452681

NSN

5962-01-345-2681

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7916884-05

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013452681

NSN

5962-01-345-2681

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

(NON-CORE DATA) BIT QUANTITY: 32
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 2.650 INCHES MAXIMUM
BODY WIDTH: 0.590 INCHES MINIMUM AND 0.620 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 BUFFER AND 2 DECODER AND 1 DETECTOR AND 1 LATCH
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC
HYBRID TECHNOLOGY TYPE: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 37 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT,DIGITAL-ERROR DETECTION AND CORRECTION CIRCUIT
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 52 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

8512132-423

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013452682

NSN

5962-01-345-2682

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8512132-423

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013452682

NSN

5962-01-345-2682

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.280 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-9 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: W/ENABLE AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN
III END ITEM IDENTIFICATION: 1260-01-165-3959 CONTROL-DISPLAY
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
III OVERALL LENGTH: 1.280 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: SRAM
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

CY7C123-15DMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013452682

NSN

5962-01-345-2682

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CY7C123-15DMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013452682

NSN

5962-01-345-2682

MFG

CYPRESS SEMICONDUCTOR CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.280 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-9 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: W/ENABLE AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN
III END ITEM IDENTIFICATION: 1260-01-165-3959 CONTROL-DISPLAY
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
III OVERALL LENGTH: 1.280 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: SRAM
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

77A106306P001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013452683

NSN

5962-01-345-2683

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77A106306P001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013452683

NSN

5962-01-345-2683

MFG

LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 240.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND POSITIVE OUTPUTS AND ELECTROSTATIC SENSITIVE
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
III OVERALL LENGTH: 1.060 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: PROGRAMMABLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: REGISTERED AND-CARRY-OR-XOR GATE ARRAY
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

PAL16A4MJ883B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013452683

NSN

5962-01-345-2683

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PAL16A4MJ883B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013452683

NSN

5962-01-345-2683

MFG

MMI/AMD

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 240.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND POSITIVE OUTPUTS AND ELECTROSTATIC SENSITIVE
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
III OVERALL LENGTH: 1.060 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: PROGRAMMABLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: REGISTERED AND-CARRY-OR-XOR GATE ARRAY
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013452683

NSN

5962-01-345-2683

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013452683

NSN

5962-01-345-2683

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 240.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND POSITIVE OUTPUTS AND ELECTROSTATIC SENSITIVE
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
III OVERALL LENGTH: 1.060 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: PROGRAMMABLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: REGISTERED AND-CARRY-OR-XOR GATE ARRAY
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

100888-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013452684

NSN

5962-01-345-2684

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100888-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013452684

NSN

5962-01-345-2684

MFG

EFRATOM TIME & FREQUENCY PRODUCTS INC

Description

(NON-CORE DATA) BIT QUANTITY: 524288
(NON-CORE DATA) WORD QUANTITY: 65536
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.435 INCHES MINIMUM AND 1.465 INCHES MAXIMUM
BODY WIDTH: 0.514 INCHES MINIMUM AND 0.598 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: ULTRAVIOLET ERASABLE AND PROGRAMMABLE AND W/ENABLE AND POSITIVE OUTPUTS AND ELECTROSTATIC SENSITIVE
III OVERALL HEIGHT: 0.290 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
III OVERALL LENGTH: 1.435 INCHES MINIMUM AND 1.465 INCHES MAXIMUM
III OVERALL WIDTH: 0.644 INCHES MINIMUM AND 0.720 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 18 INPUT
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: HAVE QUICK DECODER,U23
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

100928-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013452684

NSN

5962-01-345-2684

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100928-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013452684

NSN

5962-01-345-2684

MFG

EFRATOM TIME & FREQUENCY PRODUCTS INC

Description

(NON-CORE DATA) BIT QUANTITY: 524288
(NON-CORE DATA) WORD QUANTITY: 65536
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.435 INCHES MINIMUM AND 1.465 INCHES MAXIMUM
BODY WIDTH: 0.514 INCHES MINIMUM AND 0.598 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: ULTRAVIOLET ERASABLE AND PROGRAMMABLE AND W/ENABLE AND POSITIVE OUTPUTS AND ELECTROSTATIC SENSITIVE
III OVERALL HEIGHT: 0.290 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
III OVERALL LENGTH: 1.435 INCHES MINIMUM AND 1.465 INCHES MAXIMUM
III OVERALL WIDTH: 0.644 INCHES MINIMUM AND 0.720 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 18 INPUT
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: HAVE QUICK DECODER,U23
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

27C512I-20FA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013452684

NSN

5962-01-345-2684

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27C512I-20FA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013452684

NSN

5962-01-345-2684

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 524288
(NON-CORE DATA) WORD QUANTITY: 65536
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.435 INCHES MINIMUM AND 1.465 INCHES MAXIMUM
BODY WIDTH: 0.514 INCHES MINIMUM AND 0.598 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: ULTRAVIOLET ERASABLE AND PROGRAMMABLE AND W/ENABLE AND POSITIVE OUTPUTS AND ELECTROSTATIC SENSITIVE
III OVERALL HEIGHT: 0.290 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
III OVERALL LENGTH: 1.435 INCHES MINIMUM AND 1.465 INCHES MAXIMUM
III OVERALL WIDTH: 0.644 INCHES MINIMUM AND 0.720 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 18 INPUT
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: HAVE QUICK DECODER,U23
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013452684

NSN

5962-01-345-2684

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013452684

NSN

5962-01-345-2684

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 524288
(NON-CORE DATA) WORD QUANTITY: 65536
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.435 INCHES MINIMUM AND 1.465 INCHES MAXIMUM
BODY WIDTH: 0.514 INCHES MINIMUM AND 0.598 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: ULTRAVIOLET ERASABLE AND PROGRAMMABLE AND W/ENABLE AND POSITIVE OUTPUTS AND ELECTROSTATIC SENSITIVE
III OVERALL HEIGHT: 0.290 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
III OVERALL LENGTH: 1.435 INCHES MINIMUM AND 1.465 INCHES MAXIMUM
III OVERALL WIDTH: 0.644 INCHES MINIMUM AND 0.720 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 18 INPUT
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: HAVE QUICK DECODER,U23
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

TMS27C512-25JE

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013452684

NSN

5962-01-345-2684

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TMS27C512-25JE

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013452684

NSN

5962-01-345-2684

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

(NON-CORE DATA) BIT QUANTITY: 524288
(NON-CORE DATA) WORD QUANTITY: 65536
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.435 INCHES MINIMUM AND 1.465 INCHES MAXIMUM
BODY WIDTH: 0.514 INCHES MINIMUM AND 0.598 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: ULTRAVIOLET ERASABLE AND PROGRAMMABLE AND W/ENABLE AND POSITIVE OUTPUTS AND ELECTROSTATIC SENSITIVE
III OVERALL HEIGHT: 0.290 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
III OVERALL LENGTH: 1.435 INCHES MINIMUM AND 1.465 INCHES MAXIMUM
III OVERALL WIDTH: 0.644 INCHES MINIMUM AND 0.720 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 18 INPUT
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: HAVE QUICK DECODER,U23
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

PL7140274-12

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013452685

NSN

5962-01-345-2685

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PL7140274-12

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013452685

NSN

5962-01-345-2685

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013452685

NSN

5962-01-345-2685

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013452685

NSN

5962-01-345-2685

MFG

DLA LAND AND MARITIME

107875-005

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013453009

NSN

5962-01-345-3009

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107875-005

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013453009

NSN

5962-01-345-3009

MFG

GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV CUSTOMER SERVICES

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013453009

NSN

5962-01-345-3009

View More Info

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013453009

NSN

5962-01-345-3009

MFG

DLA LAND AND MARITIME

8515501RX

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013453010

NSN

5962-01-345-3010

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8515501RX

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013453010

NSN

5962-01-345-3010

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE

Description

FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 1260-01-165-3959 CONTROL-DISPLAY SYS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROGRAMMABLE
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT

8516246-100

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013453010

NSN

5962-01-345-3010

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8516246-100

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013453010

NSN

5962-01-345-3010

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE

Description

FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 1260-01-165-3959 CONTROL-DISPLAY SYS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROGRAMMABLE
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013453010

NSN

5962-01-345-3010

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013453010

NSN

5962-01-345-3010

MFG

DLA LAND AND MARITIME

Description

FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 1260-01-165-3959 CONTROL-DISPLAY SYS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROGRAMMABLE
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT