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5962-01-346-1900

20 Products

H4711U302-00

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013461900

NSN

5962-01-346-1900

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H4711U302-00

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013461900

NSN

5962-01-346-1900

MFG

HITACHI LTD MOBARA WORKS

Description

BODY HEIGHT: 0.220 INCHES MAXIMUM
BODY LENGTH: 1.535 INCHES MAXIMUM
BODY WIDTH: 1.150 INCHES MAXIMUM
FEATURES PROVIDED: HYBRID AND HERMETICALLY SEALED AND BURN IN AND POSITIVE OUTPUTS AND ELECTROSTATIC SENSITIVE
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III OVERALL HEIGHT: 0.220 INCHES MAXIMUM
III OVERALL LENGTH: 1.535 INCHES MAXIMUM
III OVERALL WIDTH: 2.090 INCHES NOMINAL
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: FUNCTION DRIVER,BUBBLE MEMORY
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE

7917503-000

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013461900

NSN

5962-01-346-1900

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7917503-000

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013461900

NSN

5962-01-346-1900

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

BODY HEIGHT: 0.220 INCHES MAXIMUM
BODY LENGTH: 1.535 INCHES MAXIMUM
BODY WIDTH: 1.150 INCHES MAXIMUM
FEATURES PROVIDED: HYBRID AND HERMETICALLY SEALED AND BURN IN AND POSITIVE OUTPUTS AND ELECTROSTATIC SENSITIVE
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III OVERALL HEIGHT: 0.220 INCHES MAXIMUM
III OVERALL LENGTH: 1.535 INCHES MAXIMUM
III OVERALL WIDTH: 2.090 INCHES NOMINAL
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: FUNCTION DRIVER,BUBBLE MEMORY
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE

7917504-00

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013461901

NSN

5962-01-346-1901

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7917504-00

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013461901

NSN

5962-01-346-1901

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.535 INCHES MAXIMUM
BODY WIDTH: 1.150 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 120.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: W/RESISTOR AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND POSITIVE OUTPUTS
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III OVERALL HEIGHT: 0.210 INCHES MAXIMUM
III OVERALL LENGTH: 1.535 INCHES MAXIMUM
III OVERALL WIDTH: 2.090 INCHES NOMINAL
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 28 INPUT
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: SENSE AMPLIFIER,QUAD BUBBLE MEMORY
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 35.0 VOLTS MAXIMUM POWER SOURCE

7917504-000

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013461901

NSN

5962-01-346-1901

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7917504-000

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013461901

NSN

5962-01-346-1901

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.535 INCHES MAXIMUM
BODY WIDTH: 1.150 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 120.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: W/RESISTOR AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND POSITIVE OUTPUTS
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III OVERALL HEIGHT: 0.210 INCHES MAXIMUM
III OVERALL LENGTH: 1.535 INCHES MAXIMUM
III OVERALL WIDTH: 2.090 INCHES NOMINAL
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 28 INPUT
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: SENSE AMPLIFIER,QUAD BUBBLE MEMORY
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 35.0 VOLTS MAXIMUM POWER SOURCE

H4712U302-00

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013461901

NSN

5962-01-346-1901

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H4712U302-00

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013461901

NSN

5962-01-346-1901

MFG

HITACHI LTD MOBARA WORKS

Description

BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.535 INCHES MAXIMUM
BODY WIDTH: 1.150 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 120.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: W/RESISTOR AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND POSITIVE OUTPUTS
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III OVERALL HEIGHT: 0.210 INCHES MAXIMUM
III OVERALL LENGTH: 1.535 INCHES MAXIMUM
III OVERALL WIDTH: 2.090 INCHES NOMINAL
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 28 INPUT
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: SENSE AMPLIFIER,QUAD BUBBLE MEMORY
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 35.0 VOLTS MAXIMUM POWER SOURCE

7187S55

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461902

NSN

5962-01-346-1902

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7187S55

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461902

NSN

5962-01-346-1902

MFG

INTEGRATED DEVICE TECHNOLOGY INC

Description

(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 65536
CURRENT RATING PER CHARACTERISTIC: 120.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/ENABLE AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: RECEIVING SET,RADAR AN/APR-47
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 19 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 22 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 55.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

7916707-05

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461902

NSN

5962-01-346-1902

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7916707-05

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461902

NSN

5962-01-346-1902

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 65536
CURRENT RATING PER CHARACTERISTIC: 120.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/ENABLE AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: RECEIVING SET,RADAR AN/APR-47
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 19 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 22 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 55.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

6167-70

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461903

NSN

5962-01-346-1903

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6167-70

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461903

NSN

5962-01-346-1903

MFG

INTEGRATED DEVICE TECHNOLOGY INC

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 16384
CURRENT RATING PER CHARACTERISTIC: 80.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND MONOLITHIC
III END ITEM IDENTIFICATION: RECEIVING SET,RADAR AN/APR-47
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

7909574-05

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461903

NSN

5962-01-346-1903

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7909574-05

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461903

NSN

5962-01-346-1903

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 16384
CURRENT RATING PER CHARACTERISTIC: 80.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND MONOLITHIC
III END ITEM IDENTIFICATION: RECEIVING SET,RADAR AN/APR-47
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

7143691-02

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461904

NSN

5962-01-346-1904

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7143691-02

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461904

NSN

5962-01-346-1904

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 90.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND MONOLITHIC
III END ITEM IDENTIFICATION: RECEIVING SET,RADAR AN/APR-47
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
III OVERALL LENGTH: 1.060 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
MEMORY DEVICE TYPE: PROGRAMMABLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: AND-OR GATE ARRAY
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 12.0 VOLTS MAXIMUM POWER SOURCE

M38510/50303BRA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461904

NSN

5962-01-346-1904

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M38510/50303BRA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461904

NSN

5962-01-346-1904

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 90.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND MONOLITHIC
III END ITEM IDENTIFICATION: RECEIVING SET,RADAR AN/APR-47
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
III OVERALL LENGTH: 1.060 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
MEMORY DEVICE TYPE: PROGRAMMABLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: AND-OR GATE ARRAY
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 12.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 060

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461904

NSN

5962-01-346-1904

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ROM/PROM FAMILY 060

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461904

NSN

5962-01-346-1904

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 90.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND MONOLITHIC
III END ITEM IDENTIFICATION: RECEIVING SET,RADAR AN/APR-47
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
III OVERALL LENGTH: 1.060 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
MEMORY DEVICE TYPE: PROGRAMMABLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: AND-OR GATE ARRAY
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 12.0 VOLTS MAXIMUM POWER SOURCE

VQ+PL7143691-02

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461904

NSN

5962-01-346-1904

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VQ+PL7143691-02

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461904

NSN

5962-01-346-1904

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 90.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND MONOLITHIC
III END ITEM IDENTIFICATION: RECEIVING SET,RADAR AN/APR-47
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
III OVERALL LENGTH: 1.060 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
MEMORY DEVICE TYPE: PROGRAMMABLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: AND-OR GATE ARRAY
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 12.0 VOLTS MAXIMUM POWER SOURCE

4024859-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461906

NSN

5962-01-346-1906

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4024859-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461906

NSN

5962-01-346-1906

MFG

THALES TRAINING & SIMULATION LTD

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.280 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-9 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 188.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT
III OVERALL HEIGHT: 0.265 INCHES MINIMUM AND 0.360 INCHES MAXIMUM
III OVERALL LENGTH: 1.235 INCHES MINIMUM AND 1.280 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

74B059338-201

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461906

NSN

5962-01-346-1906

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74B059338-201

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461906

NSN

5962-01-346-1906

MFG

BOEING COMPANY THE DBA BOEING

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.280 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-9 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 188.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT
III OVERALL HEIGHT: 0.265 INCHES MINIMUM AND 0.360 INCHES MAXIMUM
III OVERALL LENGTH: 1.235 INCHES MINIMUM AND 1.280 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

AM27S291SADC

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461906

NSN

5962-01-346-1906

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AM27S291SADC

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461906

NSN

5962-01-346-1906

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.280 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-9 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 188.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT
III OVERALL HEIGHT: 0.265 INCHES MINIMUM AND 0.360 INCHES MAXIMUM
III OVERALL LENGTH: 1.235 INCHES MINIMUM AND 1.280 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461906

NSN

5962-01-346-1906

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461906

NSN

5962-01-346-1906

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.280 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-9 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 188.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT
III OVERALL HEIGHT: 0.265 INCHES MINIMUM AND 0.360 INCHES MAXIMUM
III OVERALL LENGTH: 1.235 INCHES MINIMUM AND 1.280 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

5016683-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461907

NSN

5962-01-346-1907

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5016683-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461907

NSN

5962-01-346-1907

MFG

THALES TRAINING & SIMULATION LTD

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM OUTPUT
FEATURES PROVIDED: MONOLITHIC AND SCHOTTKY AND BIPOLAR
III OVERALL DIAMETER: 0.310 INCHES MAXIMUM
III OVERALL HEIGHT: 0.185 INCHES MAXIMUM
III OVERALL LENGTH: 0.840 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM INPUT

AM27S19APC

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461907

NSN

5962-01-346-1907

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AM27S19APC

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461907

NSN

5962-01-346-1907

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM OUTPUT
FEATURES PROVIDED: MONOLITHIC AND SCHOTTKY AND BIPOLAR
III OVERALL DIAMETER: 0.310 INCHES MAXIMUM
III OVERALL HEIGHT: 0.185 INCHES MAXIMUM
III OVERALL LENGTH: 0.840 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM INPUT

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461907

NSN

5962-01-346-1907

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013461907

NSN

5962-01-346-1907

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM OUTPUT
FEATURES PROVIDED: MONOLITHIC AND SCHOTTKY AND BIPOLAR
III OVERALL DIAMETER: 0.310 INCHES MAXIMUM
III OVERALL HEIGHT: 0.185 INCHES MAXIMUM
III OVERALL LENGTH: 0.840 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM INPUT