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5962-01-374-3072

20 Products

CY7C130-45PC

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013743072

NSN

5962-01-374-3072

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CY7C130-45PC

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013743072

NSN

5962-01-374-3072

MFG

CYPRESS SEMICONDUCTOR CORPORATION

8007-45-8300

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013743062

NSN

5962-01-374-3062

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8007-45-8300

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013743062

NSN

5962-01-374-3062

MFG

WAVETEK RF PRODUCTS INC

Description

DESIGN FUNCTION AND QUANTITY: 1 COUNTER, RIPPLE
FEATURES PROVIDED: BURN IN
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 380.0 MILLIWATTS
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

CD74HC583E

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013743062

NSN

5962-01-374-3062

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CD74HC583E

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013743062

NSN

5962-01-374-3062

MFG

HARRIS CORP FINDLAY OPNS

Description

DESIGN FUNCTION AND QUANTITY: 1 COUNTER, RIPPLE
FEATURES PROVIDED: BURN IN
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 380.0 MILLIWATTS
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

8001-20-3000

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962013743064

NSN

5962-01-374-3064

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8001-20-3000

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962013743064

NSN

5962-01-374-3064

MFG

WAVETEK RF PRODUCTS INC

Description

(NON-CORE DATA) BIT QUANTITY: 12
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DIGITAL TO ANALOG
FEATURES PROVIDED: BURN IN
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 17.0 VOLTS MAXIMUM POWER SOURCE

MP1230KN

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962013743064

NSN

5962-01-374-3064

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MP1230KN

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962013743064

NSN

5962-01-374-3064

MFG

MICRO POWER SYSTEMS INC

Description

(NON-CORE DATA) BIT QUANTITY: 12
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DIGITAL TO ANALOG
FEATURES PROVIDED: BURN IN
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 17.0 VOLTS MAXIMUM POWER SOURCE

6011877-001

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013743066

NSN

5962-01-374-3066

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6011877-001

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013743066

NSN

5962-01-374-3066

MFG

BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.

Q2100B

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013743066

NSN

5962-01-374-3066

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Q2100B

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013743066

NSN

5962-01-374-3066

MFG

APPLIED MICRO CIRCUITS CORPORATION DBA AMCC SALES CORPORATION

915405

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013743067

NSN

5962-01-374-3067

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915405

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013743067

NSN

5962-01-374-3067

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.

Description

CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN FUNCTION AND QUANTITY: 1 CONTROL AND 1 MONITOR
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND RADIATION HARDENED
HYBRID TECHNOLOGY TYPE: MONOLITHIC
INCLOSURE CONFIGURATION: PIN GRID ARRAY
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 40 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 90 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

CT1612/883

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013743067

NSN

5962-01-374-3067

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CT1612/883

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013743067

NSN

5962-01-374-3067

MFG

MARCONI CIRCUIT TECHNOLOGY CORP MICROELECTRONICS DIV

Description

CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN FUNCTION AND QUANTITY: 1 CONTROL AND 1 MONITOR
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND RADIATION HARDENED
HYBRID TECHNOLOGY TYPE: MONOLITHIC
INCLOSURE CONFIGURATION: PIN GRID ARRAY
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 40 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 90 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

915406

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013743068

NSN

5962-01-374-3068

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915406

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013743068

NSN

5962-01-374-3068

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.

Description

CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN FUNCTION AND QUANTITY: 1 TRANSCEIVER
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND RADIATION HARDENED
HYBRID TECHNOLOGY TYPE: MONOLITHIC
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 12 INPUT
OPERATING TEMP RANGE: -55.0 TO 105.0 DEG CELSIUS
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 36 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 18.0 VOLTS MAXIMUM POWER SOURCE

CT1589/883

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013743068

NSN

5962-01-374-3068

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CT1589/883

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962013743068

NSN

5962-01-374-3068

MFG

MARCONI CIRCUIT TECHNOLOGY CORP MICROELECTRONICS DIV

Description

CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN FUNCTION AND QUANTITY: 1 TRANSCEIVER
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND RADIATION HARDENED
HYBRID TECHNOLOGY TYPE: MONOLITHIC
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 12 INPUT
OPERATING TEMP RANGE: -55.0 TO 105.0 DEG CELSIUS
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 36 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 18.0 VOLTS MAXIMUM POWER SOURCE

12553992

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013743069

NSN

5962-01-374-3069

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12553992

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013743069

NSN

5962-01-374-3069

MFG

U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND

Description

(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 8192
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: EEPROM
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS NOMINAL POWER SOURCE

AT28C64FX-20DMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013743069

NSN

5962-01-374-3069

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AT28C64FX-20DMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013743069

NSN

5962-01-374-3069

MFG

ATMEL CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 8192
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: EEPROM
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS NOMINAL POWER SOURCE

DM28C64-200/B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013743069

NSN

5962-01-374-3069

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DM28C64-200/B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013743069

NSN

5962-01-374-3069

MFG

SEEQ TECHNOLOGY INC

Description

(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 8192
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: EEPROM
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS NOMINAL POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013743069

NSN

5962-01-374-3069

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013743069

NSN

5962-01-374-3069

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 8192
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: EEPROM
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS NOMINAL POWER SOURCE

333537

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013743070

NSN

5962-01-374-3070

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333537

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013743070

NSN

5962-01-374-3070

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.

Description

CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED AND RADIATION HARDENED
MEMORY DEVICE TYPE: PAL
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM

289733-013

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013743071

NSN

5962-01-374-3071

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289733-013

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013743071

NSN

5962-01-374-3071

MFG

GETRONICS GOVERNMENT SOLUTIONS LLC

DAP289733-013

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013743071

NSN

5962-01-374-3071

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DAP289733-013

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013743071

NSN

5962-01-374-3071

MFG

GETRONICS GOVERNMENT SOLUTIONS LLC

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013743071

NSN

5962-01-374-3071

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013743071

NSN

5962-01-374-3071

MFG

DLA LAND AND MARITIME

8000-71-3010

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013743072

NSN

5962-01-374-3072

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8000-71-3010

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013743072

NSN

5962-01-374-3072

MFG

WAVETEK RF PRODUCTS INC