My Quote Request
5962-01-575-5161
20 Products
CY7C1370D-167AXI
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015755161
NSN
5962-01-575-5161
MFG
CYPRESS SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 1.4 MILLIMETERS NOMINAL
BODY LENGTH: 20.0 MILLIMETERS NOMINAL
BODY WIDTH: 14.0 MILLIMETERS NOMINAL
CURRENT RATING PER CHARACTERISTIC: 350.00 MICROAMPERES MAXIMUM OUTPUT
FEATURES PROVIDED: ASYNCHRONOUS AND SYNCHRONOUS
INCLOSURE CONFIGURATION: FLAT PACK
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: 18MB PIPELINED SRAM W/NOBL ARCHITECTURE
SPECIAL FEATURES: SUPPORTS READ/WRITE/NO WAIT; 18MBIT SRAM; 250 MHZ BUS
TERMINAL TYPE AND QUANTITY: 100 PIN
TIME RATING PER CHACTERISTIC: 2.60 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 3.3 VOLTS NOMINAL TOTAL SUPPLY
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91803784
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015754773
NSN
5962-01-575-4773
MFG
THALES
Description
BODY HEIGHT: 33.0 MILLIMETERS NOMINAL
BODY LENGTH: 35.0 MILLIMETERS NOMINAL
BODY WIDTH: 3.2 MILLIMETERS NOMINAL
FEATURES PROVIDED: ASYNCHRONOUS AND CASCADABLE AND BIDIRECTIONAL AND DELAY, D-TYPE AND HIGH PERFORMANCE AND HIGH SPEED AND LOW POWER AND PROGRAMMABLE AND W/CLOCK
INCLOSURE CONFIGURATION: PIN GRID ARRAY
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: VIRTEX II FIELD PROGRAMMABLE GATE ARRAY
SPECIAL FEATURES: READ/WRITE; ESD PROTECTED
TERMINAL TYPE AND QUANTITY: 1152 PIN
TIME RATING PER CHACTERISTIC: 4.00 NANOSECONDS NOMINAL DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 1.5 VOLTS NOMINAL TOTAL SUPPLY
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XC2V3000-4FF1152I
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015754773
NSN
5962-01-575-4773
XC2V3000-4FF1152I
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015754773
NSN
5962-01-575-4773
MFG
XILINX INC.
Description
BODY HEIGHT: 33.0 MILLIMETERS NOMINAL
BODY LENGTH: 35.0 MILLIMETERS NOMINAL
BODY WIDTH: 3.2 MILLIMETERS NOMINAL
FEATURES PROVIDED: ASYNCHRONOUS AND CASCADABLE AND BIDIRECTIONAL AND DELAY, D-TYPE AND HIGH PERFORMANCE AND HIGH SPEED AND LOW POWER AND PROGRAMMABLE AND W/CLOCK
INCLOSURE CONFIGURATION: PIN GRID ARRAY
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: VIRTEX II FIELD PROGRAMMABLE GATE ARRAY
SPECIAL FEATURES: READ/WRITE; ESD PROTECTED
TERMINAL TYPE AND QUANTITY: 1152 PIN
TIME RATING PER CHACTERISTIC: 4.00 NANOSECONDS NOMINAL DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 1.5 VOLTS NOMINAL TOTAL SUPPLY
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91800988
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015754820
NSN
5962-01-575-4820
MFG
THALES
Description
BODY HEIGHT: 40.6 MILLIMETERS NOMINAL
BODY LENGTH: 42.5 MILLIMETERS NOMINAL
BODY WIDTH: 3.2 MILLIMETERS NOMINAL
FEATURES PROVIDED: ASYNCHRONOUS AND CASCADABLE AND BIDIRECTIONAL AND EDGE TRIGGERED AND HIGH PERFORMANCE AND HIGH SPEED AND LOW POWER AND PROGRAMMABLE AND W/CLOCK
INCLOSURE CONFIGURATION: PIN GRID ARRAY
INCLOSURE MATERIAL: METAL
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: VIRTEX II FIELD PROGRAMMABLE GATE ARRAY
SPECIAL FEATURES: FLIP FLOP; ESD PROTECTED
TERMINAL TYPE AND QUANTITY: 560 PIN
TIME RATING PER CHACTERISTIC: 7.00 NANOSECONDS NOMINAL DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 1.8 VOLTS NOMINAL TOTAL SUPPLY
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XCV2000E-7BG560I
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015754820
NSN
5962-01-575-4820
MFG
XILINX INC.
Description
BODY HEIGHT: 40.6 MILLIMETERS NOMINAL
BODY LENGTH: 42.5 MILLIMETERS NOMINAL
BODY WIDTH: 3.2 MILLIMETERS NOMINAL
FEATURES PROVIDED: ASYNCHRONOUS AND CASCADABLE AND BIDIRECTIONAL AND EDGE TRIGGERED AND HIGH PERFORMANCE AND HIGH SPEED AND LOW POWER AND PROGRAMMABLE AND W/CLOCK
INCLOSURE CONFIGURATION: PIN GRID ARRAY
INCLOSURE MATERIAL: METAL
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: VIRTEX II FIELD PROGRAMMABLE GATE ARRAY
SPECIAL FEATURES: FLIP FLOP; ESD PROTECTED
TERMINAL TYPE AND QUANTITY: 560 PIN
TIME RATING PER CHACTERISTIC: 7.00 NANOSECONDS NOMINAL DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 1.8 VOLTS NOMINAL TOTAL SUPPLY
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91801207
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015754835
NSN
5962-01-575-4835
MFG
THALES
Description
BODY HEIGHT: 33.0 MILLIMETERS NOMINAL
BODY LENGTH: 35.0 MILLIMETERS NOMINAL
BODY WIDTH: 3.2 MILLIMETERS NOMINAL
CAPITANCE RATING PER CHARACTERISTIC: 10.00 INPUT PICOFARADS NOMINAL
FEATURES PROVIDED: ASYNCHRONOUS AND CASCADABLE AND BIDIRECTIONAL AND EDGE TRIGGERED AND HIGH PERFORMANCE AND HIGH SPEED AND LOW POWER AND PROGRAMMABLE AND W/CLOCK
INCLOSURE CONFIGURATION: PIN GRID ARRAY
MEMORY CAPACITY: 16K X 1
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: VIRTEX II FIELD PROGRAMMABLE GATE ARRAY
SPECIAL FEATURES: HIGH DENSITY; FAST LOOKAHEAD CHAIN; READ/WRITE; 824 MAX I
TERMINAL TYPE AND QUANTITY: 1152 PIN
TIME RATING PER CHACTERISTIC: 4.00 NANOSECONDS NOMINAL DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 1.5 VOLTS NOMINAL TOTAL SUPPLY
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XC2V6000-4FF1152I
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015754835
NSN
5962-01-575-4835
XC2V6000-4FF1152I
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015754835
NSN
5962-01-575-4835
MFG
XILINX INC.
Description
BODY HEIGHT: 33.0 MILLIMETERS NOMINAL
BODY LENGTH: 35.0 MILLIMETERS NOMINAL
BODY WIDTH: 3.2 MILLIMETERS NOMINAL
CAPITANCE RATING PER CHARACTERISTIC: 10.00 INPUT PICOFARADS NOMINAL
FEATURES PROVIDED: ASYNCHRONOUS AND CASCADABLE AND BIDIRECTIONAL AND EDGE TRIGGERED AND HIGH PERFORMANCE AND HIGH SPEED AND LOW POWER AND PROGRAMMABLE AND W/CLOCK
INCLOSURE CONFIGURATION: PIN GRID ARRAY
MEMORY CAPACITY: 16K X 1
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: VIRTEX II FIELD PROGRAMMABLE GATE ARRAY
SPECIAL FEATURES: HIGH DENSITY; FAST LOOKAHEAD CHAIN; READ/WRITE; 824 MAX I
TERMINAL TYPE AND QUANTITY: 1152 PIN
TIME RATING PER CHACTERISTIC: 4.00 NANOSECONDS NOMINAL DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 1.5 VOLTS NOMINAL TOTAL SUPPLY
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91768945
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015754901
NSN
5962-01-575-4901
MFG
THALES
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 MICROAMPERES NOMINAL OUTPUT SINK
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: PLASTIC
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: VIRTEX II FIELD PROGRAMMABLE GATE ARRAY
SPECIAL FEATURES: SRAM DUAL PORT; IEEE COMPLIANT; W/FLIP FLOPS
TERMINAL TYPE AND QUANTITY: 208 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL TOTAL SUPPLY
Related Searches:
XC4010E-3PQ208I
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015754901
NSN
5962-01-575-4901
MFG
XILINX INC.
Description
CURRENT RATING PER CHARACTERISTIC: 12.00 MICROAMPERES NOMINAL OUTPUT SINK
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: PLASTIC
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: VIRTEX II FIELD PROGRAMMABLE GATE ARRAY
SPECIAL FEATURES: SRAM DUAL PORT; IEEE COMPLIANT; W/FLIP FLOPS
TERMINAL TYPE AND QUANTITY: 208 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL TOTAL SUPPLY
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91817305
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015755062
NSN
5962-01-575-5062
MFG
THALES
Description
INCLOSURE CONFIGURATION: FLAT PACK
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: IN SYSTEM PROGRAMMABLE POWER SUPPLY SEQUENCING CONTROLLER
SPECIAL FEATURES: MONITORS UP TO 12 POWER SUPPLIES/8 OUTPUT CONTROL SIGNALS
TERMINAL TYPE AND QUANTITY: 44 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 3.3 VOLTS MINIMUM TOTAL SUPPLY
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ISPPAC-POWR1208-01T44I
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015755062
NSN
5962-01-575-5062
ISPPAC-POWR1208-01T44I
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015755062
NSN
5962-01-575-5062
MFG
LATTICE SEMICONDUCTOR CORP
Description
INCLOSURE CONFIGURATION: FLAT PACK
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: IN SYSTEM PROGRAMMABLE POWER SUPPLY SEQUENCING CONTROLLER
SPECIAL FEATURES: MONITORS UP TO 12 POWER SUPPLIES/8 OUTPUT CONTROL SIGNALS
TERMINAL TYPE AND QUANTITY: 44 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 3.3 VOLTS MINIMUM TOTAL SUPPLY
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91809369
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015755073
NSN
5962-01-575-5073
MFG
THALES
Description
BODY LENGTH: 27.0 MILLIMETERS NOMINAL
BODY WIDTH: 27.0 MILLIMETERS NOMINAL
FEATURES PROVIDED: BIDIRECTIONAL AND BUFFERED RESET AND W/CLOCK AND SYNCHRONOUS AND ASYNCHRONOUS AND HIGH SPEED
INCLOSURE CONFIGURATION: PIN GRID ARRAY
MEMORY DEVICE TYPE: RAM
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPECIAL FEATURES: DIFFERENTIAL SUPPORT LOGIC ARRAY
TERMINAL TYPE AND QUANTITY: 672 PIN
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EP2A15F672I8
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015755073
NSN
5962-01-575-5073
MFG
ALTERA CORPORATION
Description
BODY LENGTH: 27.0 MILLIMETERS NOMINAL
BODY WIDTH: 27.0 MILLIMETERS NOMINAL
FEATURES PROVIDED: BIDIRECTIONAL AND BUFFERED RESET AND W/CLOCK AND SYNCHRONOUS AND ASYNCHRONOUS AND HIGH SPEED
INCLOSURE CONFIGURATION: PIN GRID ARRAY
MEMORY DEVICE TYPE: RAM
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPECIAL FEATURES: DIFFERENTIAL SUPPORT LOGIC ARRAY
TERMINAL TYPE AND QUANTITY: 672 PIN
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91801273
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015755081
NSN
5962-01-575-5081
MFG
THALES
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MICROAMPERES NOMINAL OUTPUT
FEATURES PROVIDED: ASYNCHRONOUS AND LOW POWER AND SYNCHRONOUS AND BIDIRECTIONAL AND HIGH SPEED AND PROGRAMMABLE
INCLOSURE CONFIGURATION: PIN GRID ARRAY
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: APEX 20K PROGRAMMABLE DUAL PORT RAM LOGIC DEVICE
SPECIAL FEATURES: DUAL PORT RAM; PHASE LOCKED LOOPS
TERMINAL TYPE AND QUANTITY: 672 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 2.5 VOLTS NOMINAL TOTAL SUPPLY
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EP20K400EFI672-2X
MICROCIRCUIT,MEMORY
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5962015755081
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5962-01-575-5081
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015755081
NSN
5962-01-575-5081
MFG
ALTERA CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MICROAMPERES NOMINAL OUTPUT
FEATURES PROVIDED: ASYNCHRONOUS AND LOW POWER AND SYNCHRONOUS AND BIDIRECTIONAL AND HIGH SPEED AND PROGRAMMABLE
INCLOSURE CONFIGURATION: PIN GRID ARRAY
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: APEX 20K PROGRAMMABLE DUAL PORT RAM LOGIC DEVICE
SPECIAL FEATURES: DUAL PORT RAM; PHASE LOCKED LOOPS
TERMINAL TYPE AND QUANTITY: 672 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 2.5 VOLTS NOMINAL TOTAL SUPPLY
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91822739
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015755094
NSN
5962-01-575-5094
MFG
THALES
Description
FEATURES PROVIDED: LOW POWER AND CASCADABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: PIN GRID ARRAY
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: PLATFORM FLASH INSYSTEM PROGRAMMABLE PROM
SPECIAL FEATURES: IEEE COMPLIANT
TERMINAL TYPE AND QUANTITY: 48 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 1.8 VOLTS NOMINAL TOTAL SUPPLY
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XCF16PFS48C
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015755094
NSN
5962-01-575-5094
MFG
XILINX INC.
Description
FEATURES PROVIDED: LOW POWER AND CASCADABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: PIN GRID ARRAY
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: PLATFORM FLASH INSYSTEM PROGRAMMABLE PROM
SPECIAL FEATURES: IEEE COMPLIANT
TERMINAL TYPE AND QUANTITY: 48 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 1.8 VOLTS NOMINAL TOTAL SUPPLY
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91821431
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015755132
NSN
5962-01-575-5132
MFG
THALES
Description
FEATURES PROVIDED: LOW POWER AND CASCADABLE AND PROGRAMMABLE AND W/CLOCK
INCLOSURE CONFIGURATION: PIN GRID ARRAY
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
SPECIAL FEATURES: IEEE COMPLIANT; WRITE PROTECTED
TERMINAL TYPE AND QUANTITY: 48 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 1.8 VOLTS NOMINAL TOTAL SUPPLY
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XCF32PFS48C
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015755132
NSN
5962-01-575-5132
MFG
XILINX INC.
Description
FEATURES PROVIDED: LOW POWER AND CASCADABLE AND PROGRAMMABLE AND W/CLOCK
INCLOSURE CONFIGURATION: PIN GRID ARRAY
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
SPECIAL FEATURES: IEEE COMPLIANT; WRITE PROTECTED
TERMINAL TYPE AND QUANTITY: 48 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 1.8 VOLTS NOMINAL TOTAL SUPPLY
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91833060
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015755161
NSN
5962-01-575-5161
MFG
THALES
Description
BODY HEIGHT: 1.4 MILLIMETERS NOMINAL
BODY LENGTH: 20.0 MILLIMETERS NOMINAL
BODY WIDTH: 14.0 MILLIMETERS NOMINAL
CURRENT RATING PER CHARACTERISTIC: 350.00 MICROAMPERES MAXIMUM OUTPUT
FEATURES PROVIDED: ASYNCHRONOUS AND SYNCHRONOUS
INCLOSURE CONFIGURATION: FLAT PACK
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: 18MB PIPELINED SRAM W/NOBL ARCHITECTURE
SPECIAL FEATURES: SUPPORTS READ/WRITE/NO WAIT; 18MBIT SRAM; 250 MHZ BUS
TERMINAL TYPE AND QUANTITY: 100 PIN
TIME RATING PER CHACTERISTIC: 2.60 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 3.3 VOLTS NOMINAL TOTAL SUPPLY