My Quote Request
5980-00-275-1967
20 Products
TIL220
LIGHT EMITTING DIODE
NSN, MFG P/N
5980002751967
NSN
5980-00-275-1967
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LENS TRANSPARENCY: TRANSLUCENT
LUMINOUS INTENSITY: 2.0 MILLICANDELA NOMINAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.345 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 MICROWATTS MINIMUM SMALL-SIGNAL OUTPUT POWER, COMMON-BASE
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL LENGTH: 0.650 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
1HD4251
LIGHT EMITTING DIODE
NSN, MFG P/N
5980002751967
NSN
5980-00-275-1967
MFG
INSTRUMENT DESIGN ENGINEERING ASSOCIATES INC DBA IDEA INC
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LENS TRANSPARENCY: TRANSLUCENT
LUMINOUS INTENSITY: 2.0 MILLICANDELA NOMINAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.345 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 MICROWATTS MINIMUM SMALL-SIGNAL OUTPUT POWER, COMMON-BASE
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL LENGTH: 0.650 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM REVERSE VOLTAGE, DC
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539480-3
LIGHT EMITTING DIODE
NSN, MFG P/N
5980002751967
NSN
5980-00-275-1967
MFG
RAYTHEON COMPANY
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LENS TRANSPARENCY: TRANSLUCENT
LUMINOUS INTENSITY: 2.0 MILLICANDELA NOMINAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.345 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 MICROWATTS MINIMUM SMALL-SIGNAL OUTPUT POWER, COMMON-BASE
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL LENGTH: 0.650 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
653-600008-001
LIGHT EMITTING DIODE
NSN, MFG P/N
5980002751967
NSN
5980-00-275-1967
MFG
MODCOMP INC.
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LENS TRANSPARENCY: TRANSLUCENT
LUMINOUS INTENSITY: 2.0 MILLICANDELA NOMINAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.345 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 MICROWATTS MINIMUM SMALL-SIGNAL OUTPUT POWER, COMMON-BASE
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL LENGTH: 0.650 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
783167
LIGHT EMITTING DIODE
NSN, MFG P/N
5980002751967
NSN
5980-00-275-1967
MFG
FLUKE CORPORATION
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LENS TRANSPARENCY: TRANSLUCENT
LUMINOUS INTENSITY: 2.0 MILLICANDELA NOMINAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.345 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 MICROWATTS MINIMUM SMALL-SIGNAL OUTPUT POWER, COMMON-BASE
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL LENGTH: 0.650 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM REVERSE VOLTAGE, DC
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IRD4251
LIGHT EMITTING DIODE
NSN, MFG P/N
5980002751967
NSN
5980-00-275-1967
MFG
INSTRUMENT DESIGN ENGINEERING ASSOCIATES INC DBA IDEA INC
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LENS TRANSPARENCY: TRANSLUCENT
LUMINOUS INTENSITY: 2.0 MILLICANDELA NOMINAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.345 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 MICROWATTS MINIMUM SMALL-SIGNAL OUTPUT POWER, COMMON-BASE
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL LENGTH: 0.650 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM REVERSE VOLTAGE, DC
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LDR5101
LIGHT EMITTING DIODE
NSN, MFG P/N
5980002751967
NSN
5980-00-275-1967
MFG
SIEMENS CORP OEM DIV
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LENS TRANSPARENCY: TRANSLUCENT
LUMINOUS INTENSITY: 2.0 MILLICANDELA NOMINAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.345 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 MICROWATTS MINIMUM SMALL-SIGNAL OUTPUT POWER, COMMON-BASE
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL LENGTH: 0.650 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
T1L220
LIGHT EMITTING DIODE
NSN, MFG P/N
5980002751967
NSN
5980-00-275-1967
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LENS TRANSPARENCY: TRANSLUCENT
LUMINOUS INTENSITY: 2.0 MILLICANDELA NOMINAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.345 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 MICROWATTS MINIMUM SMALL-SIGNAL OUTPUT POWER, COMMON-BASE
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL LENGTH: 0.650 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM REVERSE VOLTAGE, DC
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TIL210
LIGHT EMITTING DIODE
NSN, MFG P/N
5980002751967
NSN
5980-00-275-1967
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
COLOR TONE PRODUCED PER SOURCE: RED LENS
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LENS TRANSPARENCY: TRANSLUCENT
LUMINOUS INTENSITY: 2.0 MILLICANDELA NOMINAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.345 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 MICROWATTS MINIMUM SMALL-SIGNAL OUTPUT POWER, COMMON-BASE
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL LENGTH: 0.650 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM REVERSE VOLTAGE, DC
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2E3810-03-0001
COUPLER,OPTOELECTRONIC
NSN, MFG P/N
5980002815417
NSN
5980-00-281-5417
2E3810-03-0001
COUPLER,OPTOELECTRONIC
NSN, MFG P/N
5980002815417
NSN
5980-00-281-5417
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: CASE HERMETICALLY SEALED WITH LEADS BROUGHT OUT THROUGH GLASS TO METAL SEAL,0.370 IN. DIA,0.260 IN. H,FIVE LEADS 0.500 IN. LG
MANUFACTURERS CODE: 73030
MFR SOURCE CONTROLLING REFERENCE: 2E3810-03-0001
SPEC/STD CONTROLLING DATA:
Related Searches:
4N22
COUPLER,OPTOELECTRONIC
NSN, MFG P/N
5980002815417
NSN
5980-00-281-5417
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: CASE HERMETICALLY SEALED WITH LEADS BROUGHT OUT THROUGH GLASS TO METAL SEAL,0.370 IN. DIA,0.260 IN. H,FIVE LEADS 0.500 IN. LG
MANUFACTURERS CODE: 73030
MFR SOURCE CONTROLLING REFERENCE: 2E3810-03-0001
SPEC/STD CONTROLLING DATA:
Related Searches:
TPC0L
PHOTOELECTRIC CELL
NSN, MFG P/N
5980002822628
NSN
5980-00-282-2628
MFG
HONEYWELL INC MICRO SWITCH DIV MARLBORO PLANT
Description
INCLOSURE MATERIAL: PLASTIC, EPOXY RESIN
MOUNTING METHOD: BRACKET
OVERALL DIAMETER: 0.250 INCHES NOMINAL
OVERALL LENGTH: 97.031 INCHES NOMINAL
RESPONSE TIME: 50.0 MILLISECONDS NOMINAL
TERMINAL QUANTITY: 2
TERMINAL TYPE: WIRE LEAD
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6A
PHOTOELECTRIC CELL
NSN, MFG P/N
5980002844840
NSN
5980-00-284-4840
MFG
BRADLEY SEMICONDUCTOR CORP
Description
END ITEM IDENTIFICATION: TYPE SG-21B/U
FLUCTUATION RESPONSE PER SECOND: 10000.0
OUTPUT SENSITIVITY RATING: 35 UA (MIN) SENSITIVITY OUTPUT AT276 FOOT-CANDLES
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL HEIGHT: 0.050 INCHES NOMINAL
SPECIAL FEATURES: PHOTOVOLTAIC TYPE CELL
SPECTRAL RESPONSE IN ANGSTROM UNITS AT FIFTY PERCENT OF MAXIMUM LEVEL: 3900.0 MINIMUM AND 6500.0 MAXIMUM
USAGE DESIGN: INDOOR
Related Searches:
IM75-251B
COVER,PHOTOELECTRIC CELL
NSN, MFG P/N
5980002965903
NSN
5980-00-296-5903
MFG
LFE INSTRUMENTS A MARK IV CO
Description
BODY HEIGHT: 3.437 INCHES NOMINAL
BODY LENGTH: 1.750 INCHES NOMINAL
BODY WIDTH: 1.687 INCHES NOMINAL
MATERIAL: PLASTIC
MOUNTING CONFIGURATION: FOUR 4-40 TAPPED INSERT MTG HOLES ON 1.437 IN. BY 1.125 IN. MTG CENTERS
Related Searches:
7903355
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980002991885
NSN
5980-00-299-1885
MFG
L-3 COMMUNICATIONS CORPORATION DBA COMMUNICATIONS SYSTEMS WEST DIV COMMUNICATION SYSTEMS WEST
Description
OVERALL HEIGHT: 0.025 INCHES NOMINAL
OVERALL LENGTH: 0.197 INCHES NOMINAL
OVERALL WIDTH: 0.188 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD
Related Searches:
HR1267
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980002991885
NSN
5980-00-299-1885
MFG
N A P SMD TECHNOLOGY INC
Description
OVERALL HEIGHT: 0.025 INCHES NOMINAL
OVERALL LENGTH: 0.197 INCHES NOMINAL
OVERALL WIDTH: 0.188 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD
Related Searches:
61-5016
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980003118824
NSN
5980-00-311-8824
MFG
APPLIED SOLAR ENERGY CORP
Description
FUNCTION FOR WHICH DESIGNED: PHOTOVOLTAIC DIODE
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
7903355-00
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980003118824
NSN
5980-00-311-8824
7903355-00
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980003118824
NSN
5980-00-311-8824
MFG
L-3 COMMUNICATIONS CORPORATION DBA COMMUNICATIONS SYSTEMS WEST DIV COMMUNICATION SYSTEMS WEST
Description
FUNCTION FOR WHICH DESIGNED: PHOTOVOLTAIC DIODE
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
HR1267
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980003118824
NSN
5980-00-311-8824
MFG
JDSU
Description
FUNCTION FOR WHICH DESIGNED: PHOTOVOLTAIC DIODE
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
VPC120
PHOTOELECTRIC CELL
NSN, MFG P/N
5980003126862
NSN
5980-00-312-6862
MFG
CROUSE-HINDS CO
Description
SPECIAL FEATURES: 120 V CELL,W/450 WATTS MAX
USAGE DESIGN: INDOOR AND OUTDOOR