My Quote Request
5961-01-035-4452
20 Products
BRE201
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010354452
NSN
5961-01-035-4452
BRE201
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010354452
NSN
5961-01-035-4452
MFG
RECTIFIER COMPONENTS CORP
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: BRE201
MANUFACTURERS CODE: 52336
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.620 INCHES MAXIMUM
OVERALL WIDTH: 0.620 INCHES MAXIMUM
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; RESISTIVE AND INDUCTIVE LOAD; PLASTIC CASE; 70 VOLTS RMS AND 2 AMPS DC
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1N5232
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010352881
NSN
5961-01-035-2881
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
226654-000
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010353816
NSN
5961-01-035-3816
226654-000
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010353816
NSN
5961-01-035-3816
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
MAJOR COMPONENTS: PLATE 1
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 226654-000
OVERALL HEIGHT: 0.813 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES MAXIMUM
OVERALL WIDTH: 0.750 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
Related Searches:
655-174
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010353816
NSN
5961-01-035-3816
655-174
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961010353816
NSN
5961-01-035-3816
MFG
MICRO USPD INC
Description
MAJOR COMPONENTS: PLATE 1
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 226654-000
OVERALL HEIGHT: 0.813 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES MAXIMUM
OVERALL WIDTH: 0.750 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
Related Searches:
20-00775-002
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010353820
NSN
5961-01-035-3820
20-00775-002
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010353820
NSN
5961-01-035-3820
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: 411L/E-3A
MANUFACTURERS CODE: 00724
MFR SOURCE CONTROLLING REFERENCE: 20-00775-002
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.180 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 0.430 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
Related Searches:
SA5067
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010353820
NSN
5961-01-035-3820
SA5067
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010353820
NSN
5961-01-035-3820
MFG
SEMTECH CORPORATION
Description
III END ITEM IDENTIFICATION: 411L/E-3A
MANUFACTURERS CODE: 00724
MFR SOURCE CONTROLLING REFERENCE: 20-00775-002
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.180 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 0.430 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
Related Searches:
20-00776-002
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010353821
NSN
5961-01-035-3821
20-00776-002
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010353821
NSN
5961-01-035-3821
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
III END ITEM IDENTIFICATION: 411L/E3A
MANUFACTURERS CODE: 00724
MFR SOURCE CONTROLLING REFERENCE: 20-00776-002
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 1.130 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 5.0 AMP
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
652-941
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010353821
NSN
5961-01-035-3821
652-941
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010353821
NSN
5961-01-035-3821
MFG
MICRO USPD INC
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
III END ITEM IDENTIFICATION: 411L/E3A
MANUFACTURERS CODE: 00724
MFR SOURCE CONTROLLING REFERENCE: 20-00776-002
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 1.130 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 5.0 AMP
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
SA4904
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010353821
NSN
5961-01-035-3821
SA4904
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010353821
NSN
5961-01-035-3821
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
III END ITEM IDENTIFICATION: 411L/E3A
MANUFACTURERS CODE: 00724
MFR SOURCE CONTROLLING REFERENCE: 20-00776-002
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 1.130 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 5.0 AMP
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
BRE206
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010353902
NSN
5961-01-035-3902
BRE206
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010353902
NSN
5961-01-035-3902
MFG
RECTIFIER COMPONENTS CORP
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: BRE206
MANUFACTURERS CODE: 52336
MATERIAL: SILICON
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.620 INCHES MAXIMUM
OVERALL WIDTH: 0.620 INCHES MAXIMUM
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; RESISTIVE AND INDUCTIVE LOAD; PLASTIC CASE; 420 VOLTS RMS AND 2 AMPS DC
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
584514-1
TRANSISTOR
NSN, MFG P/N
5961010353904
NSN
5961-01-035-3904
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
DESIGN CONTROL REFERENCE: 584514-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 3B150
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 49956-584514 DRAWING
THE MANUFACTURERS DATA:
Related Searches:
65909
TRANSISTOR
NSN, MFG P/N
5961010353904
NSN
5961-01-035-3904
MFG
INTERSIL CORPORATION
Description
DESIGN CONTROL REFERENCE: 584514-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 3B150
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 49956-584514 DRAWING
THE MANUFACTURERS DATA:
Related Searches:
SRF5024H
TRANSISTOR
NSN, MFG P/N
5961010353904
NSN
5961-01-035-3904
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DESIGN CONTROL REFERENCE: 584514-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 3B150
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 49956-584514 DRAWING
THE MANUFACTURERS DATA:
Related Searches:
91566726
TRANSISTOR
NSN, MFG P/N
5961010353906
NSN
5961-01-035-3906
MFG
THALES
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.222 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.105 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 10.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
E300
TRANSISTOR
NSN, MFG P/N
5961010353906
NSN
5961-01-035-3906
MFG
SOLITRON DEVICES INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.222 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.105 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 10.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
J300-18
TRANSISTOR
NSN, MFG P/N
5961010353906
NSN
5961-01-035-3906
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.222 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.105 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 10.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
2230002275
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010353907
NSN
5961-01-035-3907
2230002275
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010353907
NSN
5961-01-035-3907
MFG
COMTECH PST CORP. DIV HILL ENGINEERING
Description
DESIGN CONTROL REFERENCE: 2230002275
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 31196
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
123673-01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010353908
NSN
5961-01-035-3908
123673-01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010353908
NSN
5961-01-035-3908
MFG
PENN CORP RITEPOINT DIV
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MANUFACTURERS CODE: 97586
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: 123673-01
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 1.000 INCHES MAXIMUM
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
Related Searches:
SCBA2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010353908
NSN
5961-01-035-3908
SCBA2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010353908
NSN
5961-01-035-3908
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MANUFACTURERS CODE: 97586
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: 123673-01
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 1.000 INCHES MAXIMUM
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
Related Searches:
SA2909A
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010354043
NSN
5961-01-035-4043
SA2909A
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010354043
NSN
5961-01-035-4043
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
SPECIAL FEATURES: SINGLE PHASE;FULL WAVE BRIDGE;3 AMPS AT 80 DEG C;0.750 IN. LG;0.750 IN. W;0.625 IN. H