My Quote Request
5961-01-110-5347
20 Products
680-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011105347
NSN
5961-01-110-5347
MFG
MICRO USPD INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
L-1020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011104643
NSN
5961-01-110-4643
MFG
MONSANTO INDUSTRIAL CHEMICALS CO
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
376-11760
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011104648
NSN
5961-01-110-4648
MFG
DATRON THE INSTRUMENTS INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
330-0515
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011104654
NSN
5961-01-110-4654
MFG
DDC PERTEC PERIPHERALS CORP
Description
INCLOSURE MATERIAL: GLASS OR METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
330-0475
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011104655
NSN
5961-01-110-4655
MFG
DDC PERTEC PERIPHERALS CORP
Description
INCLOSURE MATERIAL: GLASS OR PLASTIC OR METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
1N5246B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011104657
NSN
5961-01-110-4657
MFG
THOMSON-CSF COMPONENTS CORP SEMICONDUCTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 7.80 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
331-1605
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011104657
NSN
5961-01-110-4657
MFG
DDC PERTEC PERIPHERALS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 7.80 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 16.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
400-0592
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011104658
NSN
5961-01-110-4658
MFG
DDC PERTEC PERIPHERALS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
12044-0021
TRANSISTOR
NSN, MFG P/N
5961011104781
NSN
5961-01-110-4781
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
39613
TRANSISTOR
NSN, MFG P/N
5961011104781
NSN
5961-01-110-4781
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
50RCS100
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011104782
NSN
5961-01-110-4782
50RCS100
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011104782
NSN
5961-01-110-4782
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 63.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 40.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE AND 1000.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.742 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.684 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 2.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
TEST DATA DOCUMENT: 96214-801577 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
801577-6
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011104782
NSN
5961-01-110-4782
801577-6
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011104782
NSN
5961-01-110-4782
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 63.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 40.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE AND 1000.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.742 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.684 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 2.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
TEST DATA DOCUMENT: 96214-801577 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
C147PX147
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011104782
NSN
5961-01-110-4782
C147PX147
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011104782
NSN
5961-01-110-4782
MFG
SEMITRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 63.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 40.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE AND 1000.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.742 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.684 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 2.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
TEST DATA DOCUMENT: 96214-801577 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
SK3093
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011104783
NSN
5961-01-110-4783
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.90 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-27
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
UZ2381
DIODE ZENER
NSN, MFG P/N
5961011105087
NSN
5961-01-110-5087
MFG
MICRO USPD INC
Description
DIODE ZENER
Related Searches:
1884-0293
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011105222
NSN
5961-01-110-5222
1884-0293
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011105222
NSN
5961-01-110-5222
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
532052-01
TRANSISTOR
NSN, MFG P/N
5961011105344
NSN
5961-01-110-5344
MFG
LITTON SYSTEMS INC. DIV NAVIGATION SYSTEMS DIVISION
Description
TRANSISTOR
Related Searches:
1900-0004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011105345
NSN
5961-01-110-5345
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
20MH10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011105346
NSN
5961-01-110-5346
MFG
RECTIFIER COMPONENTS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
4-25185P
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011105347
NSN
5961-01-110-5347
MFG
SELEX COMMUNICATIONS SPA
Description
SEMICONDUCTOR DEVICE,DIODE